Photoemission from α and β phases of the GaAs(0 0 1)-c(4 × 4) surface

We prepared α- and β surface phases of GaAs(0 0 1)-c(4 × 4) reconstruction by molecular beam epitaxy (MBE) using As₄ and As₂ molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data show pronounced differences corresponding to the surface composition and the atomic structure of the two phases, as proposed in the literature. In UPS, the β phase is characterized by an intensive surface state 0.5 eV below the top of the valence band at low photon energy, while an analogous peak in the α phase spectra is missing. The surface state is interpreted in terms of dangling bonds on As dimers. The As3d and Ga3d core level photoelectron lines exhibit phase-specific shapes as well as differences in the number, position and intensity of their deconvoluted components. The location of various atoms in the surface and subsurface layers is discussed; our photoemission results support models of the β phase and the α phase with As-As dimers and Ga-As heterodimers, respectively.     

Synthesis,structures and luminescence properties of two gallium(III) complexes with 5,7-dimethyl-8-hydroxyquinoline

Luminescent gallium(III) complexes featuring 5,7-dimethyl-8-hydroxyquinoline (DimOx) are systematically compared and their structural features are correlated with their photophysical properties. The two complexes are chemically identical; however, contain various number of solvent molecules in the crystalline lattice which is representative of the bulk material confirmed by both nuclear magnetic resonance and elemental analysis. Detailed structural comparisons highlight the effect which the solvent molecules have on the intra- and intermolecular interactions. A distinct number of interactions are found for the gallium complex (1) containing more than one solvent molecule for unit cell. Variation in complex morphology is similarly observed via SEM micrographs. The distinct luminescent properties of the two gallium complexes appear directly related to octahedral coordination of the 8-hydroxyquinoline ligand as well as the number of identical coordinated solvent molecules.     

Porous nano-minerals substituted apatite/chitin/pectin nanocomposites scaffolds for bone tissue engineering

In the current study, a porous 3D scaffold using Gallium-Apatite/chitin/pectin (Ga-HA/C/P) nanocomposites scaffolds (NCS) were fabricated by freeze-drying process with applications in orthopedics (bone tissue engineering). Various NCSs (0%, 30%, 50 and 70%) were prepared and characterized for its chemical structure, crystalline phase, surface texture by using various techniques such as FT-IR, XRD and SEM-EDX, respectively. The analyses of physicochemical properties proved that the formulated scaffolds were highly porous, and mechanically stable with superior density. The nanocomposite scaffolds also presented with increased swelling ability, lower biodegradation rate and higher mechanical strength. Further, biocompatibility and cytotoxicity of Ga-HA/C/P nanocomposite scaffolds were studied using NIH3T3 cells and MG-63 cells revealed no toxicity and cells attached and proliferated on scaffolds. Further implantation of prepared NCS showed mature bone formation through formation of new bone cells and osteoblast differentiation. Also, Ga-HA/C/P nanocomposites scaffolds proved to be more effective than chitin-pectin composite scaffolds. Taking results together it can be inferred that the prepared nanocomposite scaffolds possesses the prerequisites and showed great potential for treating orthopedic applications.     

Iron-Gallium and Cobalt-Gallium Tetraphosphido Complexes

The synthesis and characterization of two heterobimetallic complexes [K([18]crown-6){(η⁴-C₁₄H₁₀)Fe(μ-η⁴:η²-P₄)Ga(nacnac)}] ( 1 ) (C₁₄H₁₀ = anthracene) and [K(dme)₂{(η⁴-C₁₄H₁₀)Co(μ-η⁴:η²-P₄)Ga(nacnac)}] ( 2 ) with strongly reduced P₄ units is reported. Compounds 1 and 2 are prepared by reaction of the gallium(III) complex [(nacnac)Ga(η²-P₄)] (nacnac = CH[CMeN(2,6-iPr₂C₆H₃)]₂) with bis(anthracene)ferrate(1–) and -cobaltate(1–) salts. The molecular structures of 1 and 2 were determined by X-ray crystallography and feature a P₄ chain which binds to the transition metal atom via all four P atoms and to the gallium atom via the terminal P atoms. Multinuclear NMR studies on 2 suggest that the molecular structure is preserved in solution.     

DX-Like behavior of Se-impurity centers in gasb under hydrostatic pressure

Abstract

Hall coefficient (R_H) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in the range 8×10¹⁷ cm^?3 - 1×10¹⁸ cm^?3. With increasing pressure at 300 K, the electrons are strongly trapped into a resonant impurity level. The pressure induced occupation of this level leads to time-dependent effects at T<120 K. The activated thermal electron emission over a potential barrier E<sb>B = 300×30 meV gives clear evidence for a large lattice relaxation around the impurity centers characteristic for DX-like behavior.     

Radiation effects in ionic solids

Current development of the research of radiation damage in ionic solids is reviewed. Emphasis is placed on the correlation between elementary radiation damage processes and the atomic and electronic structures of the materials. Both the radiation damage induced by electronic excitation and by elastic collision are treated. For the former two crucial processes, the self-trapping of excitons and the formation of stable Frenkel pairs from the self-trapped excitons in several materials, is discussed in terms of the structures of materials. Deficiency in the available data on the knock-on threshold energies are pointed out. Available information of Frenkel pairs produced by electronic and elastic encounters is surveyed. Possible models of defect clustering are summarized and existing information on clustering is discussed on their basis.     

Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride

Current conduction mechanisms through as-deposited and post-deposition annealed (200–800 °C) RF-magnetron sputtered Y₂O₃ gate oxides on n-type GaN have been systematically investigated with current–voltage measurements at temperature in the range of 25–175 °C. The possible current conduction mechanisms that govern the leakage current of Y₂O₃/GaN metal-oxide-semiconductor test structure are space-charge-limited conduction, Schottky emission, Poole–Frenkel emission, and Fowler-Nordheim tunneling. The dominance of these conduction mechanisms is depending on applied electric field and measurement temperatures.     

碱性品红分子在纳米磷化镓粒子表面的吸附取向(英文)

利用表面增强拉曼光谱,初步确定了吸附于纳米磷化镓(GaP)粉体表面的碱性品红分子的取向。在295K时,将50 mg GaP粉体分别置于50 ml,4.7×10-3M和50 ml,4.74×10-6M碱性品红水溶液中。对由较高浓度溶液形成的吸附系统持续搅拌24小时;而对极稀溶液吸附系统则连续搅拌处理7天。在经过过滤、干燥处理后,吸附有染料分子的GaP粉体被直接用于碱性品红的表面拉曼光谱测试。通过对染料分子中央碳原子呼吸振动和氮-苯环伸缩振动模式的相对强度进行分析可知:在较高浓度的溶液中,染料分子主要以一种混合取向方式吸附于GaP粉体表面上,即“端基接触”和“平躺”两种方式;而在极稀溶液中,染料分子则仅以“端基接触”方式吸附于GaP粉体表面上。