Synthese und Kristallstruktur von [(PhCH2)2GaF(tBuNH2)]2 · 2 THF

Synthesis and Crystal Structure of [(PhCH₂)₂GaF(^tBuNH₂)]₂ · 2 THF (PhCH₂)₂GaF reacts with ^tBuNH₂ to the adduct [(PhCH₂)₂GaF(^tBuNH₂)] ( 1 ). 1 was characterized by NMR, IR and MS techniques. 1 can be recrystallized from THF forming crystals of [ 1 ]₂ · 2 THF. According to an X-ray structure analysis [ 1 ]₂ · 2 THF consists of dimers of 1 formed by hydrogen bridges. The THF molecules are coordinated to [ 1 ]₂ by hydrogen bridges, too.     

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27?GPa and 900?K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2?GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa)?=?22.6???0.0014?×?T (K).     

The surface phase transition and low-temperature phase of α-Ga(0 1 0) studied by SPA-LEED

The order–disorder phase transition on the α-Ga(0 1 0) structure was studied by spot-profile analysis low energy electron diffraction (SPA-LEED). A low temperature diffraction pattern reveals a small splitting of the overlayer spots which corresponds to a real-space distance of 81 Å, equivalent to 18 unit cells. The splitting is interpreted as caused by a regular ordering of anti-phase domains of the low-temperature phase. Due to the low symmetry of the surface, the domain boundaries are aligned only in one direction, giving rise to a regular, one-dimensional grid. The temperature dependence of the intensity and width of the reconstruction-induced diffraction spots is also investigated. It suggests that the phase transition takes place at a critical temperature T_c=232 K and that anti-phase boundary proliferation plays a role.     

涂钼热解石墨管电热原子吸收测定痕量镓的研究

比较了不同基体改进剂 ,不同涂层对镓在热解石墨管中原子化的影响。研究了以硝酸镍为基体改进剂 ,以涂钼热解石墨管为原子化器镓的原子化机理 ,优化了各项参数 ,找到了一种测定复杂样品中痕量镓的新方法。方法特征量为 2 1 2× 1 0 -1 1 g ,检出限为 1 4× 1 0 -1 0 g ,RSD≤ 3 6 % (n =1 1 ) ,样品回收率 97 4 %～1 0 2 7%。     

Increasing the antibacterial activity of gallium(III) against Pseudomonas aeruginosa upon coordination to pyridine-derived thiosemicarbazones

Reaction of N(4)-phenyl-2-formylpyridine thiosemicarbazone (H2Fo4Ph), N(4)-phenyl-2-acetylpyridine thiosemicarbazone (H2Ac4Ph) and N(4)-phenyl-2-benzoylpyridine thiosemicarbazone (H2Bz4Ph) with gallium nitrate gave [Ga(H2Fo4Ph)₂](NO₃)₃ (1), [Ga(2Ac4Ph)₂]NO₃ (2) and [Ga(2Bz4Ph)₂]NO₃ (3). In all complexes coordination of the thiosemicarbazone via the N_py–N–S chelating system occurs. In 1 the thiosemicarbazone acts as a neutral ligand while in 2 and 3 the ligand is anionic. Upon slow diffusion of 2 in DMSO [Ga(2Ac4Ph)₂]NO₃·DMSO (2a) was formed. The crystal structure of 2a was determined. Upon coordination the antibacterial activity of both gallium and thiosemicarbazones against Pseudomonas aeruginosa significantly increases.     

Novel Sensitive Voltammetric Detection of Trace Gallium(III) with Presence of Catechol Using Mercury Film Silver Based Electrode

A new adsorptive stripping voltammetric method for the determination of trace gallium(III) based on the adsorption of gallium(III)‐catechol complex on the cyclic renewable mercury film silver based electrode (Hg(Ag)FE) is presented. The effects of various factors such as: preconcentration potential and time, pulse height, step potential and supporting electrolyte composition are optimized. The calibration graph is linear from 2 nM (0.14 μg L^?1) to 100 nM (6.97 μg L^?1) for a preconcentration time of 30 s, with correlation coefficient of 0.9993. For a Hg(Ag)FE with a surface area of 9.7 mm² the detection limit for a preconcentration time of 90 s is as low as 7 ng L^?1. The repeatability of the method at a concentration level of the analyte as low as 0.05 μg L^?1, expressed as RSD is 3.6% (n=5). The proposed method was successfully applied by studying the natural samples and simultaneous recovery of Ga(III) from spiked water and sediment samples.     

Infrared and infrared emission spectroscopy of gallium oxide α-GaO(OH) nanostructures

Infrared spectroscopy has been used to study nano- to micro-sized gallium oxyhydroxide α-GaO(OH), prepared using a low temperature hydrothermal route. Rod-like α-GaO(OH) crystals with average length of 2.5 μm and width of 1.5 μm were prepared when the initial molar ratio of Ga to OH was 1:3. β-Ga₂O₃ nano and micro-rods were prepared through the calcination of α-GaO(OH). The initial morphology of α-GaO(OH) is retained in the β-Ga₂O₃ nanorods.The combination of infrared and infrared emission spectroscopy complimented with dynamic thermal analysis were used to characterise the α-GaO(OH) nanotubes and the formation of β-Ga₂O₃ nanorods. Bands at around 2903 and 2836 cm⁻¹ are assigned to the –OH stretching vibration of α-GaO(OH) nanorods. Infrared bands at around 952 and 1026 cm⁻¹ are assigned to the Ga–OH deformation modes of α-GaO(OH). A significant number of bands are observed in the 620–725 cm⁻¹ region and are assigned to GaO stretching vibrations.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

Invention,development, and status of the blue light-emitting diode,the enabler of solid-state lighting

The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked a more than twenty-year period of intensive research to improve their efficiency. Solutions to critical challenges related to material quality, light extraction, and internal quantum efficiency have now enabled highly efficient blue LEDs that are used to generate white light in solid-state lighting systems that surpass the efficiency of conventional incandescent lighting by 15–20×. Here we discuss the initial invention of blue LEDs, historical developments that led to their current state-of-the-art performance, and potential future directions for blue LEDs and solid-state lighting.     

Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

The threading dislocation (TD) density in GaN films grown directly on flat sapphire substrates is typically >10¹⁰/cm², which can deteriorate the properties of GaN-based LEDs significantly. This paper reports an approach to reducing the TD density in a GaN layer using a variety of patterned sapphire substrates (PSS). A cone-shaped PSS produced by metal organic chemical vapor deposition (MOVCD) was used for GaN deposition. Three types of GaN specimens were prepared at the initial nucleation stage, middle growth stage and final growth stage. The TDs generated on the cone-shaped PSS were analyzed by transmission electron microscopy (TEM) and a strain mapping simulation using HRTEM images, which evaluated the residual strain distribution. A large number of TDs were generated and the residual strain by the lattice distortions remained above the top of the cone-shaped regions. However, no TDs and residual strain were observed at the slope of the cone-shaped regions. This might be due to the formation of a GaN layer by lateral overgrowth at the slope of the cone-shaped regions, resulting in less lattice mismatch and incoherency between the GaN and sapphire. In conclusion, the TD density in the GaN layer could be reduced significantly, approximately 10⁷/cm², using the cone-shaped PSS.