Abläufe der Ammonolysen der Ammoniumhexafluorometallate des Aluminiums,Galliums und Indiums, (NH4)3MF6 (M = Al,Ga, In)

The Courses of the Ammonolyses of the Ammonium Hexafluorometalates of Aluminum, Gallium, and Indium, (NH₄)₃MF₆ (M = Al, Ga, In) The courses of the ammonolysis reactions of the ammonium hexafluorometalates (NH₄)₃MF₆ (M = Al, Ga, In) were investigated with the aid of in‐situ powder diffractometry and differential thermal analysis. Under these conditions, the reaction of (NH₄)₃AlF₆ with gaseous ammonia yields at about 360 °C AlF₃ via the intermediates NH₄AlF₄, Al(NH₃)₂F₃ and Al(NH₃)F₃. The ammonolysis of (NH₄)₃GaF₆ produces GaN at about 400 °C. Depending upon the actual reaction conditions, the intermediates NH₄GaF₄ and Ga(NH₃)F₃ as well as their ammonia adducts NH₄GaF₄ · NH₃ and Ga(NH₃)₂F₃ and the amide‐ammoniate Ga(NH₃)(NH₂)F₂ are observed. In the case of (NH₄)₃InF₆ the intermediates (NH₄)₃InF₆ · NH₃ and In(NH₃)F₃ may exist; there are also indications for the reduction of In(III) to In(I) and for the existence of In(NH₃)₂F and InF as products of the ammonolysis of (NH₄)₃InF₆.     

Reaktionen von R4Sb2 (R = Me,Et) mit (Me3SiCH2)3M (M = Ga,In) und Kristallstrukturen von [(Me3SiCH2)2InSbMe2]3 und [(Me3SiCH2)2GaOSbEt2]2

Reactions of R₄Sb₂ (R = Me, Et) with (Me₃SiCH₂)₃M (M = Ga, In) and Crystal Structures of [(Me₃SiCH₂)₂InSbMe₂]₃ and [(Me₃SiCH₂)₂GaOSbEt₂]₂ The reaction of (Me₃SiCH₂)₃In with Me₂SbSbMe₂ gives [(Me₃SiCH₂)₂InSbMe₂]₃ ( 1 ) and Me₃SiCH₂SbMe₂. [(Me₃SiCH₂)₂GaOSbEt₂]₂ ( 2 ) is formed by the reaction of (Me₃SiCH₂)₃Ga with Et₂SbSbEt₂ and oxygen. The syntheses and the crystal structures of 1 and 2 are reported.     

A Silatetragallane—Classical Heterobicyclopentane or closo-Polyhedron?

Classical and nonclassical can be used to describe the bonding in the polyhedral Ga₄Si framework of the silagallanate ion [Me₃SiSi{GaSi(SiMe₃)₃}₃GaSiMe₃]⁻ (the GaSi framework is depicted in the picture). This is the result of density functional calculations that were carried out on model compounds. The cluster was obtained by ultrasonication of gallium and iodine and subsequent reaction with (Me₃Si)₃Li(thf)₃.     

Sesquialkoxide von Gallium und Indium

Sesquialkoxides of Gallium and Indium Treatment of GaMe₃ with one equivalent of HO^cHex in toluene at 20 °C leads to [Me₂GaO^cHex]₂ ( 4 ) under evolution of methane. The reaction of InMe₃ with two equivalents of HO^cHex leads under similar conditions not to [MeIn(O^cHex)₂]_n but to the sesquialkoxide [In{Me₂In(O^cHex)₂}₃] ( 5 ). 5 can be described also as [{Me₂InO^cHex)}₂{MeIn(O^cHex)₂}₂]. The use of an excess of cyclohexanol in boiling toluene gives the same result. Under these reflux conditions, the reaction of GaMe₃ with an excess of PhCH₂OH leads exclusively to another type of sequialkoxides, [Ga{MeGa(OCH₂Ph)₃}₃] ( 6 ). 4 — 6 were characterized by NMR, vibrational and MS spectra, as well as by X‐ray structure determinations. According to this, 4 forms centrosymmetrical and therefore planar Ga₂O₂ four‐membered rings. 5 and 6 possess basically the same structural motif, central M³⁺ ion ( 5 : In³⁺; 6 : Ga³⁺) coordinated by three metalate units ( 5 : [Me₂In(O^cHex)₂]^—; 6 : [MeGa(OCH₂Ph)₃]^—). The central M³⁺ ions have always coordination number (CN) six while the three surrounding metal ions possess CN 4. Because of the spectroscopic findings 6 must exist in two isomers (1:1). The C₃‐symmetrical isomer C₃‐ 6 was characterized by X‐ray analysis, while the isomer C₁‐ 6 could by described mainly by the complex NMR data.     

Chemischer Transport fester Lösungen. 11 [1] Mischphasen und Chemischer Transport in den Systemen CrIII/InIII/GeIV/O,GaIII/InIII/GeIV/O,MnIII/InIII/GeIV/O und FeIII/InIII/GeIV/O

Chemical Vapor Transport of Solid Solutions. 11 Mixed Phases and Chemical Vapor Transport in the Systems Cr^III/In^III/Ge^IV/O, Ga^III/In^III/Ge^IV/O, Mn^III/In^III/Ge^IV/O und Fe^III/In^III/Ge^IV/O By means of chemical vapor transport methods the following mixed phases have been prepared: Cr_{0, 18}In_{1, 82}Ge₂O₇ (Cl₂, 950 → 850 °C), (Ga_{0, 6}In_{1, 4})₂Ge₂O₇ (Thortveitit‐type, Cl₂, 1050 → 950 °C), (Ga_{1, 9}In_{0, 1})₂Ge₂O₇ (Ga₂Ge₂O₇‐type, 1050 → 950 °C), (In_{1, 9}Mn_{0, 1})₂Ge₂O₇ (Thortveiti‐type, Cl₂, 1000 → 800 °C), mixed phase crystallizing in the Mn₂Ge₂O₇‐structure showing a composition near MnInGe₂O₇ (Cl₂, 1000 → 800 °C), Mn_{6, 5}In_{0, 5}GeO₁₂ (Braunit‐type, Cl₂, 1000 → 800 °C), (Fe_xIn_1‐x)Ge₂O₇ (Thortveitit‐type with x = 0…0, 94; Cl₂, 840 → 780 °C). Changing the compositions of the starting materials showed no effect on the composition of the deposit except for the system Fe₂O₃‐In₂O₃‐GeO₂.     

Synthesen und Kristallstrukturen von Dialkylgalliumhydriden — dimere versus trimere Formeleinheiten

Syntheses and Crystal Structures of Dialkylgallium Hydrides — Dimeric versus Trimeric Formula Units Dialkylgallium hydrides (R = Me, Et, iPr, iBu, neopentyl) were obtained on two different synthetic routes. The dimethyl and diethyl compounds were formed by the reaction of LiH with the corresponding dialkylgallium chlorides via lithium dialkyldihydridogallate intermediates, which so far have not been isolated in a pure form. On the second route, trialkylgallium compounds were treated with [GaH₃·NMe₂Et] to yield the dialkylgallium hydrides by a substituent exchange reaction. The dimethyl, diethyl and diisopropyl compounds are trimeric in solution. That trimeric structure was verified for the diisopropyl derivative by a crystal structure determination. Di(neopentyl)gallium hydride has a dimeric structure in solution and in the solid state.     

Strukturen zweifach metallierter Derivate von 3, 3‐Dimethyl‐1, 5‐bis(trimethylsilyl)‐1, 5‐diaza‐pentan mit Lithium und Aluminium sowie zweier Donor‐substituierter Digallane

Structural Characterization of Bis(metallated) Derivatives of 3, 3‐Dimethyl‐1, 5‐bis(trimethylsilyl)‐1, 5‐diaza‐pentane with Lithium and Aluminum and of two Donor‐substituted Digallanes The diaminopropane derivative Me₂C[CH₂N(H)SiMe₃]₂ is metallated with n‐butyllithium and lithium tetrahydridoaluminate to obtain Me₂C[CH₂N(Li)SiMe₃]₂ and Me₂C[CH₂N(Li)SiMe₃][CH₂N(AlH₂)SiMe₃], respectively. Both compounds exhibit a central eight‐membered ring, Li₄N₄ or Li₂Al₂N₄. Me₂C[CH₂N(Li)SiMe₃]₂ reacts with Ga₂Cl₄ · 2dioxane under formation of the corresponding tetra(amino)digallane. This is monomeric, in contrast to a dimeric tetraalkoxy‐substituted digallane, Ga₄O^tBu₈. All compounds were characterized by single crystal X‐ray crystallography.     

[Ga6R8]2– (R = SiPh2Me): Eine metalloide Clusterverbindung mit einem unerwarteten Ga6‐Gerüst

[Ga₆R₈]^2– (R = SiPh₂Me): A Metalloid Cluster Compound with an Unexpected Ga₆‐Frame The reaction of a metastable solution of GaBr with a solution of LiSiPh₂Me in a toluene/THF mixture results in orange coloured crystals of [Ga₆(SiPh₂Me)₈]^2– · 2 [Li(THF)₄]⁺ ( 1 ). The unexpected structure of the planar Ga₆ frame (C_2h) could also be realized with the help of DFT calculation. DFT calculations furthermore show that 1 is energetically favoured against an octahedral Ga₆R₆^2– species and R₂. In contrast calculations for the similar Al and B species show that in these cases the octahedral entities are favoured. These results demonstrate that even for similar compounds of B, Al, and Ga Wade rules are too general and that they cannot predict the correct structure. Moreover the atomic arrangement within 1 shows that a structure is preferred which is also present in allotropic β‐Ga and that therefore clusters of this type should be called metalloid or more general elementoid.     

Synthese und Kristallstrukturen der Phosphaniminato-Komplexe [AlCl2(NPEt3)]2, [GaI2(NPEt3)]2 und [GaI2(NPPh3)]2

Synthesis and Crystal Structures of the Phosphoraneiminato Complexes [AlCl₂(NPEt₃)]₂, [GaI₂(NPEt₃)]₂, and [GaI₂(NPPh₃)]₂ [AlCl₂(NPEt₃)]₂ ( 1 ) is made according to the known method by reaction of aluminium trichloride with the silylated phosphaneimine Me₃SiNPEt₃ in acetonitrile; it is isolated as colourless, moisture sensitive crystals. The phosphoraneiminato complexes [GaI₂(NPEt₃)]₂ ( 2 ) and [GaI₂(NPPh₃)]₂ ( 3 ), on the other hand, are obtained by redox reactions as pale yellow crystals; ( 2 ) of “gallium(I) iodide” with Me₃SiNPEt₃ in toluene and ( 3 ) of gallium with N-iodine triphenylphosphaneimine, INPPh₃, in tetrahydrofuran. 1 and 3 are characterized spectroscopically and by crystal structure determinations; 2 is characterized only crystallographically. 1 : Space group Pbca, Z = 4; lattice dimensions at –70 °C: a = 1232.6(2), b = 1341.1(2), c = 1393.4(3) pm, R₁ = 0.0315. 1 forms centrosymmetric molecules in which the Al atoms are linked via Al–N bonds of the two (NPEt₃^–) groups; with 185.0 and 184.4 pm these bonds are of almost the same lengths. 2 : Space group Pbca, Z = 4; lattice dimensions at –80 °C: a = 1380.0(1), b = 1311.0(1), c = 1429.1(1) pm, R₁ = 0.0273. 2 crystallizes isotypically with 1 . The gallium atoms of the centrosymmetric Ga₂N₂ four-membered ring are connected with Ga–N distances of equal length (190.9 pm). 3 · THF: Space group P2₁2₁2₁, Z = 2; lattice dimensions at –140 °C: a = 1494.6(1), b = 1536.3(1), c = 974.6(1) pm, R₁ = 0.0382. 3 forms dimeric molecules in which the gallium atoms are linked via the N atoms of the (NPPh₃^–) groups to form a non-planar Ga₂N₂ four-membered ring of C₂ symmetry with Ga–N bonds of equal lengths – within standard deviations – of 194.7 pm. The phosphoraneiminato groups are arranged in a synperiplanar way.