Visible and NIR luminescence of nanocrystalline β-Ga2O3:Er prepared by solution combustion synthesis

In this paper we report on facile solution combustion synthesis of erbium doped β-Ga₂O₃ with urea as fuel. The product was characterized using powder X-ray diffraction and transmission electron microscopy (TEM). X-ray diffraction and TEM showed that the material is nanostructured. Luminescence properties of β-Ga₂O₃:Er are studied with excitation in near infrared (Nd:YAG laser at 1064 nm) and visible (argon laser at 514.5 nm). A strong NIR emission of Er³⁺ in the window of minimal optical loss in silica based optical fibers, due to the ⁴I_13/2→⁴I_15/2 transition at 1.55 μm has been observed. Codoping with Yb³⁺ significantly increases the intensity of that important emission.     

Reversible Size Control of Liquid‐Metal Nanoparticles under Ultrasonication

This paper describes the reversible control of the size of liquid‐metal nanoparticles under ultrasonication. Gallium was utilized as a liquid metal, which has a melting point of 29.8 °C. Investigating the effects of ultrasonication (power, time, and temperature) on the formation of gallium nanoparticles revealed that the process is similar to the formation of oil in water (O/W) or water in oil (W/O) emulsions, as the temperature significantly affects the size of the gallium nanoparticles (GaNPs). Under ultrasonication, the balance between the break‐up and coalescence of the GaNPs can be adjusted by changing the temperature or adding acid through modulating the natural surface oxide layer (which can be removed with acid) and the stabilizing effect of the surfactant dodecanethiol. Coalescence was predominant at higher temperatures, whereas particle break‐up was found to be predominant at lower temperatures. Furthermore, the change in size was accompanied by a shift in the plasmonic absorption of the GaNPs in the UV region.     

Effect of switching ultrasonic amplitude in preparing a hybrid of fullerene (C60) and gallium oxide (Ga2O3)

In this study, we proposed ‘switching ultrasonic amplitude’ as a new strategy of applying ultrasonic energy to prepare a hybrid of buckminsterfullerene (C₆₀) and gallium oxide (Ga₂O₃), C₆₀/Ga₂O₃. In the proposed method, we switched the ultrasonic amplitude from 25% to 50% (by 5% amplitude per 10 min, within 1 h of ultrasonic irradiation) for the sonochemical treatment of a heterogeneous aqueous mixture of C₆₀ and Ga₂O₃ by a probe-type ultrasonic horn operating at 20 kHz. We found that compared to the conventional techniques associated with high amplitude oriented ultrasonic preparation of functional materials, switching ultrasonic amplitude can better perform in preparing C₆₀/Ga₂O₃ with respect to avoiding titanium (Ti) as an impurity generating from the tip erosion of a probe-type ultrasonic horn during high amplitude ultrasonic irradiation in an aqueous medium. Based on SEM/EDX analysis, the quantity of Ti (wt.%) in C₆₀/Ga₂O₃ prepared by the proposed technique of switching ultrasonic amplitude was found to be 1.7% less than that prepared at 50% amplitude of ultrasonic irradiation. The particles of C₆₀/Ga₂O₃ prepared by different modes of amplitude formed large (2–12 μm) aggregates in their solid phase.Whereas, in the aqueous medium, they were found to disperse in their nano sizes. The minimum particle size of the as-synthesized C₆₀/Ga₂O₃ in an aqueous medium prepared by the proposed method of switching ultrasonic amplitude reached to approximately 467 nm. Comparatively, the minimum particle sizes were approximately 658 nm and 144 nm, using 25% and 50% amplitude, respectively. Additionally, Ga₂O₃ went under hydration during ultrasonic irradiation. Moreover, due to the electron cloud interference from C₆₀ in the hybrid structure of C₆₀/Ga₂O₃, the vibrational modes of Ga₂O₃ were Raman inactive in C₆₀/Ga₂O₃.     

“Four-component” assembly of polyaromatic 4H-cyclopenta[b]thiophene structures based on GaCl3-promoted reaction of styrylmalonates with 5-phenylthiophene-2-carbaldehyde

New “four-component” self-assembly of polyaromatic thiophene structures based on styrylmalonates and 5-phenylthiophene-2-carbaldehyde has been developed. This process is promoted by GaCl₃ and involves two [2?+?3]-annulation steps on the CHO-groups and para-substitution into one Ph-ring. The main feature of discovered process is a high diastereoselectivity with a significant increase in molecular complexity. The resulting polyaromatic structures containing two thiophene moieties in each structure have intense color and strong absorption in a near UV spectral region with absorption maxima in the range of 257–360?nm.     

Surface chemistry and transport effects in GaN hydride vapor phase epitaxy

A simple quasi-thermodynamic model of surface chemistry in GaN hydride vapor phase epitaxy (HVPE) is presented. The model is coupled with the detailed 3D simulations of species transport in a horizontal-tube reactor and validated by the comparison with the data on the GaN growth rate obtained by laser reflectometry. Parametric study of the growth rate as a function of temperature and species flow rates has been performed over a wide range of growth conditions. The important role of species transport in an HVPE reactor is demonstrated. In particular, a strong effect of the natural concentration convection resulting in the formation of recirculation zones and in a non-uniform vapor composition is revealed by modeling. The impact of these effects on the GaN growth rate and V/III ratio on the growth surface is discussed in detail.     

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

The dependency of LPE growth rate and dislocation density on supersaturation in the growth of GaN single crystals in the Na flux was investigated. When the growth rate was low during the growth of GaN at a small value of supersaturation, the dislocation density was much lower compared with that of a substrate grown by the Metal Organic Chemical Vapor Deposition method (MOCVD). In contrast, when the growth rate of GaN was high at a large value of supersaturation, the crystal was hopper including a large number of dislocations. The relationship between the growth conditions and the crystal color in GaN single crystals grown in Na flux was also investigated. When at 800 °C the nitrogen concentration in Na–Ga melt was low, the grown crystals were always tinted black. When the nitrogen concentration at 850 °C was high, transparent crystals could be grown.     

Hydrogallierungsreaktionen mit den Monoalkinen H5C6‐C≡C‐SiMe3 und H5C6‐C≡C‐CMe3 – cis/trans‐Isomerie und Substituentenaustausch

Hydrogallation Reactions Involving the Monoalkynes H₅C₆‐C≡C‐SiMe₃ and H₅C₆‐C≡C‐CMe₃ – cis/trans Isomerisation and Substituent Exchange Phenyl‐trimethylsilylethyne, H₅C₆‐C≡C‐SiMe₃, reacted with different dialkylgallium hydrides, R₂Ga‐H (R = Me, Et, nPr, iPr, tBu), by the addition of one Ga‐H bond to its C≡C triple bond (hydrogallation). The gallium atoms attacked selectively those carbon atoms, which were also attached to trimethylsilyl groups. The cis arrangement of Ga and H across the resulting C=C double bonds resulted only for the sterically most shielded di(tert‐butyl)gallium derivative, while in all other cases spontaneous cis/trans rearrangement occurred with the quantitative formation of the trans addition products. The diethyl compound Et₂Ga‐C(SiMe₃)=C(H)‐C₆H₅ ( 2 ) gave by substituent exchange the secondary products EtGa[C(SiMe₃)=C(H)‐C₆H₅]₂ ( 7 , Z,Z) and Ga[C(SiMe₃)=C(H)‐C₆H₅]₃ ( 8 ). Interestingly, compound 8 has two alkenyl groups with a Z configuration, while the third C=C double bond has the cis arrangement of Ga and H (E configuration). The reversibility of the cis/trans isomerisation of hydrogallation products was observed for the first time. tert‐Butyl‐phenylethyne gave the simple addition product, R₂Ga(C₆H₅)=C(H)‐CMe₃ ( 9 ), only with di(n‐propyl)gallium hydride.     

Synthese und Metallierung des Diaminosiloxans O(SiiPr2NH2)2

Synthesis and Metalation of the Diaminosiloxane O(SiiPr₂NH₂)₂ The 1,3‐diaminoldisiloxane O(SiiPr₂NH₂)₂ ( 1 ) was obtained from the reaction of O(SiiPr₂Cl)₂ with NH₃. The reactions of 1 with AlEt₃ or GaEt₃ produced the compounds [O{SiiPr₂N(H)MEt₂}{SiiPr₂NMEt}]₂ ( 2 : M = Al; 3 : M = Ga). The crystal structures of 2 and 3 were determined by single crystal X‐ray diffraction, showing a polycyclic M₄N₄Si₄O₂ core structure of these molecules.     

Complexation of Sc(III), Ga(III), In(III) and Ln(III) with Eriochrome Red B

Cyclic linear-sweep voltammetry was used to study the complexation of Sc(III), Ga(III), In(III) and Ln(III) with eriochrome red B (ERB). It was established that all metal ions investigated form complex compounds with azodye having a mole ratio, M(III):ERB = 1:2. The hydroxo forms of M(III) ions, which take part in interaction with ERB, were determined by the Nazarenko method. The stability constants for the formation of these chelates are nearly the same. It was shown that the reduction of the ligand in the complex does not only depend on the peculiarities of complexation, but the processes occurring in pre-electrode layer also influence it.