Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

A large planar tungsten carbide (WC) Schottky diode on p-type homoepitaxial diamond was mainly investigated on a microscopic level by atomic force microscopy (AFM) and conducting probe atomic force microscopy (CP-AFM), allowing simultaneous topographic and local electrical resistance imaging measurements. These techniques revealed the existence of a specific microstructure on the WC Schottky contact consisting of electrically insulating islands surrounded by conductive paths. The islands are found to be insulating in the whole range of explored bias [−5 V, +5 V], whereas the current flowing between the islands is 1000 times lower at a reverse bias of −5 V than at a forward bias of +5 V, in agreement with the rectifying ratio found from macroscopic current–voltage (I–V) measurements. CP-AFM provides a prospective imaging tool which is well suited for analyzing the local electrical properties and instabilities of Schottky junctions.     

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD).     

Dielectric properties of ferroelectric diisopropylammonium iodide

Temperature dependences of dielectric constant, amplitude of the third harmonic and heat capacity for the organic ferroelectric of diisopropylammonium iodide (C₆H₁₆NI) have been investigated. The measurements were carried out through heating and cooling cycles in the range of 300–400?K. It was found that upon the first heating, only one phase transition occurred without the presence of the ferroelectric phase. For samples preheated over 420?K, two phase transitions at 363 and 378?K appeared in the heating process, and the ferroelectric state was also observed between them. Upon cooling, the ferroelectric phase was detected in the range of lower 361?K and persisted up to room temperature.     

宽禁带碳化硅单晶衬底及器件研究进展

碳化硅作为第三代宽禁带半导体的核心材料之一,相对于传统的硅和砷化镓等半导体材料,具有禁带宽度大、载流子饱和迁移速度高,热导率高、临界击穿、场强高等诸多优异的性质。基于这些优良的特性,碳化硅材料是制备高温电子器件、高频大功率器件的理想材料。近年来在碳化硅材料生长和器件制备方面取得重大进展,对碳化硅材料特性和生长方法进行回顾,并研究了碳化硅光导开关偏压、触发能量、导通电流之间的关系,以及开关失效情况下电极表面的损伤情况。     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

激光熔覆硬质合金强化化纤切断刀的研究

在机械压制法预置硬质合金WC/Co粉末的条形55Si2Mn弹簧钢上,用激光熔覆方法制备了化纤切断刀.调整熔覆层粉末配方中Al、TiC的加入量,结果表明加适量的Al粉能有效地抑制气孔,加TiC粉末能提高熔覆硬度.通过优化激光熔覆工艺参数,得到了无气孔缺陷、组织性能良好、硬度达到HV0.21250的激光熔覆层,达到了化纤切断刀的性能要求.     

Sputtering of SiC with low energy He and Ar ions under grazing incidence

The effect of low energy sputtering under grazing incidence upon the surface composition of SiC was investigated by Auger electron spectroscopy. The energy of the sputtering projectiles (He, Ar) varied from 200 to 1500?eV. Peak shifts to the higher energies with increasing argon ion energy were observed for all silicon and carbon Auger transitions. These shifts were explained by enhanced damage of the surface region within the sampling depth of the Auger electrons. The insensitivity of the Auger peak position to the energy of helium ions indicates that the damage state in the surface region does not change with the increasing energy of helium ions. An increase of the carbon concentration with the decrease of the argon energy was observed. The experiments were accompanied by dynamic Monte Carlo simulations by the TRIDYN code.     

Hierarchical Cu precipitation in lamellated steel after multistage heat treatment

Abstract

The hierarchical distribution of Cu-rich precipitates (CRPs) and related partitioning and segregation behaviours of solute atoms were investigated in a 1.54 Cu-3.51 Ni (wt.%) low-carbon high-strength low-alloy (HSLA) steel after multistage heat treatment by using the combination of electron backscatter diffraction (EBSD), transmission electron microscopy (TEM) and atom probe tomography (APT). Intercritical tempering at 725 °C of as-quenched lathlike martensitic structure leads to the coprecipitation of CRPs at the periphery of a carbide precipitate which is possibly in its paraequilibrium state due to distinct solute segregation at the interface. The alloyed carbide and CRPs provide constituent elements for each other and make the coprecipitation thermodynamically favourable. Meanwhile, austenite reversion occurs to form fresh secondary martensite (FSM) zone where is rich in Cu and pertinent Ni and Mn atoms, which gives rise to a different distributional morphology of CRPs with large size and high density. In addition, conventional tempering at 500 °C leads to the formation of nanoscale Cu-rich clusters in α-Fe matrix. As a consequence, three populations of CRPs are hierarchically formed around carbide precipitate, at FSM zone and in α-Fe matrix. The formation of different precipitated features can be turned by controlling diffusion pathways of related solute atoms and further to tailor mechanical properties via proper multistage heat treatments.     

Determination of the Constants of Binding of Acridine Dyes with Micelles of Sodium Dodecyl Sulfate Using the Quenching of Delayed Fluorescence by Heavy Atoms

The constants of binding dye molecules with the micelles of sodium dodecyl sulfate are determined using quenching of delayed fluorescence of acridine dyes by sodium iodide in aqueous–micellar solutions. Kinetic equations have been composed that describe the processes of deactivation of the excited states of dyes. By solving these equations at the concentration of the quencher sodium iodide corresponding to the minimum lifetime of triplet states and at the concentration of micelles corresponding to the least value of the delayed fluorescence quenching rate constants, we obtained the constants of binding dyes with micelles equal to 1.3·10⁷, 2.9·10⁷, and 3.1·10⁷ M^–1 for trypaflavine, acridine orange, and acridine yellow, respectively. We calculated the rate constants of quenching of the triplet states of the molecules of dyes by iodide ions (I ^–) that decreased in transition from trypaflavine to acridine orange and acridine yellow.