基于细胞红外光谱预测乙酰化细胞的辐射敏感性

组蛋白乙酰化是表观遗传修饰的一种重要方式。肿瘤细胞的组蛋白大部分呈现低乙酰化状态,而组蛋白去乙酰化酶抑制剂（histone deacetylase inhibitor,HDACi）可以增加肿瘤细胞的乙酰化水平,诱导细胞周期阻滞及凋亡。曲古菌素A （trichostatin A,TSA）是组蛋白去乙酰化酶抑制剂的代表药物之一,能够提高肿瘤细胞组蛋白和非组蛋白的乙酰化水平。傅里叶变换红外（Fourier Transform Infrared,FTIR）光谱可以对无染色、无标记的生物样品进行无损检测,具有特征性明显、快速、分辨率高、重复性好等优点,已被广泛用于细胞的微观生物过程的研究。本文利用红外光谱技术结合免疫荧光技术的手段,研究TSA处理细胞后的乙酰化作用效果,发现红外光谱中甲基与亚甲基的伸缩振动强度之比能够表征细胞内的乙酰化水平变化,然后基于红外光谱的分析结果预测了乙酰化状态不同的细胞辐射敏感性的变化。结果表明,乙酰化细胞的辐射损伤效应可以通过甲基与亚甲基的伸缩振动强度之比进行评价,且该比值与细胞的辐射敏感性呈正相关,表明红外光谱技术可以辅助预测细胞的辐射敏感性,并进行细胞表观遗传学特征与辐射效应关系的研究。Histone acetylation is one of important epigenetic modifications, and histone in most of tumor cells shows low acetylation state. However, histone deacetylase inhibitor (HDACi) can correct abnormal acetylation status, induce cell cycle arrest and apoptosis. Trichostatin A (TSA) is one of the representatives of histone deacetylase inhibitors, which can inhibit histone deacetylase, increase the acetylation level of histone and nonhistone in cell. Fourier transform infrared (FTIR) spectroscopy is a powerful analytical tool which can detect nondestructively, quatitatively and quantitatively biological samples without bio-tagging and bio-labeling. FTIR spectroscopy technology has multiple advantages, including finger-print characteristics, rapid analysis, high resolution and good repeatability. Therefore, it has been widely used in the research of biological processes. This work applied FTIR spectroscopy to study the changes in cells treated with TSA, compared the acetylation level according to FTIR intensity ratio of methyl to methylene stretching vibration, and based on the FTIR analysis predicted the radiosensitivity of the cells with different acetylation levels. As a result, we have verified that the damage caused by radiation in acetylated cells can be evaluated by the ratio of methyl and methylene intensity which is positively correlated with cellular radiosensitivity. Therefore, this work demonstrates that FTIR spectroscopy can be useful for the prediction of radiosensitivity and may also open a door for the study of relationship between epigenetics and radiation bio-effects.     

Experimental design to measure the anchoring energy on substrate surface by using the alternating-current bridge

The anchoring property of the substrate surface of liquid crystal cells plays an important role in display and nondisplay fields. This property directly affects the deformation of liquid crystal molecules to change the phase difference through liquid crystal cells. In this paper, a test method based on the alternating-current bridge is proposed to determine the capacitance of liquid crystal cells and thus measure the anchoring energy of the substrate surface. The anchoring energy can be obtained by comparing the capacitance–voltage curves of twisted nematic liquid crystal cells with different anchoring properties in experimental and theoretical results simulated on the basis of Frank elastic theory. Compared with the other methods to determine the anchoring energy, our proposed method requires a simple treatment of liquid crystal cells and allows easy and high-accuracy measurements, thereby expanding the test ideas on the performance parameters of liquid crystal devices.     

SXDG-1型汽车前照灯全自动检测仪的微机控制

SXDG—1型汽车前照灯全自动检测仪是用于检测汽车前照大灯光轴的偏斜情况及发光强度并进行定量检验的专用设备。它可以自动测出有关参数,并予以数字显示和打印输出。本文介绍了该仪器的主要性能、工作原理及微机控制系统(包括硬件结构和软件设计思想等)。     

DNA damage induced by laser-hematoporphyrin derivative

Irradiation caused DNA single-strand breaks in S180 cells in the presence oflaser-hematoporphyrin derivative(HPD).The number of single strand breaks was 3.69 ×10~(10)break dolton~(-1).The analysis of base composition of DNA showed that the effect of laser-HPDirradiation on guanine was the highest,being 5-12 times as high as those of the three others(adenine,cytosine and thymine).It was different from the nature of DNA damage caused by γ-ray irradiation.     

Linewidth of electromagnetically induced transparency under motional averaging in a coated vapor cell

The linewidth of electromagnetically induced transparency(EIT) in a coated Rb vapor cell was studied under a magnetic field gradient.The nonlinear broadening of the EIT linewidth with the magnetic field gradient was observed.It was found that the motional averaging of the field gradient was more pronounced at higher laser intensities and larger beam sizes.In the same regime,there was a small linewidth decrease with the increasing magnetic field gradient.We have established a Monte-Carlo model,which gave results in good qualitative agreement with our experiment.Physics pictures for the above phenomena were also suggested.These results provide an understanding of the EIT linewidth behavior under motional averaging,and should be useful for applications in quantum optics and metrology based on coated vapor cells.     

新型MIp~+-Al_(0.3)Ga_(0.7)As/p-n-n~+-GaAs太阳电池的设计与I-V特性理论分析

为充分利用太阳光的短波部分,将AlxGa1-xAs设计为电池的又一个光伏工作层,并引入固定负电荷,建立界面感应势垒,形成MIp -AlGaAs感应结,有效降低界面对光生电子的复合。以制作工艺简单的p -AlGaAs／p-GaAs界面,将感应结与p／n-GaAs部分连接起来,构成新型高效率复合结构MIp -Al0.3Ga0.7As／p-n-n -GaAs太阳电池。其I-V特性理论研究绐果表明,选择合适的负电荷面密度数和Al0.3Ga0.7As层的掺杂浓度,即:建立合适高度的感应势垒,可显著降低界面复合速度近8个数量级。优化设计得到的整个电池的效率为31.5％,较传统的窗口层电池有明显提高。     

噪声模态单元预判的经验模态分解脉冲星信号消噪

为了改善脉冲星辐射脉冲信号的消噪效果, 提出了一种基于噪声模态单元预判的经验模态分解(EMD) 消噪声方法. 该方法首先利用EMD将含噪辐射脉冲信号分解为一组内蕴模态函数(IMF), 根据IMF系数的统计特性采用局部均方误差准则进行噪声模态单元预判, 并将噪声模态单元置零; 然后对噪声模态单元预判处理后的IMF以模态单元为基本单位进行最优比例萎缩消噪, 从而达到抑制噪声、保留信号的目的. 实验结果表明: 与Sure Shrink小波阈值法、Bayes Shrink小波阈值法和EMD模态单元比例萎缩法相比, 基于噪声模态单元预判的EMD消噪方法可以更有效地去除脉冲辐射信号中的噪声, 同时更好地保留信号突变处的细节信息特征, 在信噪比、 均方误差、峰值相对误差、峰位误差和相位误差等方面都有一定程度的改善. 关键词： 脉冲星信号消噪 经验模态分解 噪声模态单元预判 局部均方误差     

金纳米棒核／二氧化硅壳纳米复合结构的可控制备及细胞成像

采用模板合成以及溶胶凝胶方法制备了金纳米棒核／二氧化硅壳（GNR@SiO2）纳米复合粒子,探讨了这种新型纳米复合结构的可控制备、光谱性质、细胞毒性和细胞成像。通过紫外可见分光光度计、透射电镜、共聚焦显微镜对样品进行表征,结果表明：通过对反应时间的调控,获得的纳米复合粒子的二氧化硅壳层厚度可以控制在20～30nm。由于二氧化硅壳层的存在,大大提高了金纳米棒的稳定性,同时降低了金纳米棒的细胞毒性;此外,由于二氧化硅壳层具有良好的化学修饰作用,因此可以将荧光探针分子标记在二氧化硅壳层表面,修饰后的纳米复合粒子可以通过细胞内吞作用进入细胞,从而实现细胞内的光学成像。因此,该纳米粒子复合材料在生物传感、细胞成像以及光热治疗等方面有着良好的应用前景。     

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.