Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

Adsorption of poly(ethylene glycol)s on mercury/aqueous solution interface 1. Kinetics of PEG 8000 adsorption

In order to study the influence of the adsorption of fulvic compounds on voltammetric signals and to understand better the adsorption of these compounds on hydrophobic natural water interfaces, adsorption studies of macromolecules such as poly(ethylene glycol) (HO(CH₂CH₂O)_n) with molecular weight of 8000 were done on the mercury/water interface by a.c. voltammetry at the potential of zero charge. The maximum surface concentration, adsorption equilibrium constant and adsorption rate constant have been determined from the global adsorption mechanism, controlled by two determining steps: diffusion and kinetics of adsorption at the interface.     

过氧化物模拟酶在介体型生物传感器方面应用初探

meso-四(4-磺基苯)卟啉锰(Ⅲ)作为过氧化物模拟酶可催化H_2O_2与K_4Fe(CN)_6反应。电流响应与H_2O_2浓度在3.0×10~(-4)～1.0×10~(-3)mol/L范围内呈线性关系。重现性和回收率良好。抗坏血酸和DL-半胱氨酸干扰严重。     

裸玻碳电极伏安测定甲氰咪胍

提出了裸ＧＣＥ不需任何处理测定甲氰咪胍的方法，浓度在３×１０＾－７－６×１０＾－５ｇ／ｍＬ，范围内与峰电流呈线性关系，ＲＳＤ为２．２％，回收率为９６％－１０２％。该方法操作简便快速，大多数金属离子和多种有机生化物质不干扰测定，方法用于片剂和加标尿样中甲氰咪胍的测定与药典方法对照，获得满意结果，并对电极反应进行了初步探讨。     

冠醚型电极对局部麻醉药响应功能的研究

用二苯并24-冠-8作为活性物质、邻苯二甲酸二(2-乙基)己酯为增塑剂制得PVC膜电极。电极对局麻药丁卡因、普鲁卡因和利多卡因具有能斯特响应,用于局麻药针剂的测定取得满意的结果。     

壁喷电池在流动注射阳极溶出伏安法中的应用

在流动注射阳极溶出伏安法中应用壁喷电池,探讨了非稳定态电积过程的溶出峰电流理论方程,预言了峰电流正比于R~(3/4)(R为工作电极半径),并对有关参数进行了实验验证。对5×10~(-7)mol/L Cd(Ⅱ)连续测定40次,表明相对标准偏差为0.94％。     

对NO生理作用的新认识及其电化学实时检测

本文综述了近年来学术界对ＮＯ生理作用的新认识，并介绍了现场实时检测生物活体中释放的ＮＯ浓度的电化学方法．     

中性载体阳离子电极膜电化学的计算机数字模拟

对中性载体阳离子电极膜3种可能的传输模式进行了数字模拟,研究了淌度、浓度、配合物稳定常数以及阴离子亲脂性对电极电位响应的影响。模拟结果对于廓清这类电极响应机理,解释有关实验现象及指导新电极设计提供了有用的信息。     

Structural and electrochemical studies of annealed LiNiVO4 thin films

We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd.