以电化学方法在离子液体[DEME][BF4]中合成铂纳米粒子

通过恒电位电沉积法在离子液体N,N-二乙基-N-甲基-N-（2-甲氧基乙基）铵四氟硼酸铵（[DEME][BF₄]）中,在玻碳电极上制备了铂纳米颗粒。首先探究了不同沉积电势和不同沉积时间对铂纳米粒子微观形貌的影响,由SEM和TEM图发现在-2.5 V下沉积480 s制备的铂纳米粒子的平均粒径约为2.38 nm。使用高分辨率透射电子显微镜（HRTEM）和电子衍射（SAED）对其晶体结构进行表征,证明了铂纳米粒子为面心立方（fcc）晶体结构。在硫酸中测试铂纳米粒子的催化性能,发现其暴露出明显的（110）和（100）晶面。进一步对铂的电沉积行为进行研究发现,Pt（Ⅳ）的两步还原是由扩散过程和电化学过程共同控制。     

电化学沉积制备半导体CuInSe2薄膜

本文报道恒电位法在pH为1.35的Cu₂SO₄、SeO₂、In₂(SO₄)₃溶液中,在Ti电极上电化学沉积制备CuInSe₂纳米薄膜.研究络合剂柠檬酸和酒石酸对制备CuInSe₂纳米薄膜的影响.扫描电子显微镜(SEM)结果表明,加入络合剂后,电化学沉积的薄膜表面颗粒分布更均匀、致密.X射线衍射(XRD)分析显示,制备的CuInSe₂薄膜是黄铜矿和闪锌矿相的混和物,添加柠檬酸和酒石酸后,衍射峰增强,晶形变好.制备的薄膜颗粒尺寸大小在250nm左右,造成粒度增大的原因是由于颗粒的团聚作用.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

电解沉积的分形维数与ZnSO_4溶液浓度的关系

用电沉积方法得到了不同浓度硫酸锌电解液的分形凝聚图像;进行图像处理,得到了其分形维数与浓度的关系曲线;用粒子扩散限制凝聚模型解释了此关系     

Electrochemical deposition and structural characterization of Au-Sn alloys

In the present work the electrochemical deposition of Au-Sn alloys is addressed and a cyanide-free process is presented. The electrolyte is an acidic thiourea solution containing gold as a Au[CS(NH₂)₂]⁺ complex and tin as stannous ions. Results concerning the plating process development and deposit characterization are reported. Au-Sn alloy films with a Sn content up to 50 at% and a single-phase structure can be obtained from the acidic thiourea–Au(I) solution under pulsed current plating conditions. Alloy deposits show three main crystal structures: a face centred cubic (fcc) Au(Sn) solid solution, extending up to 7 at% Sn; a hexagonal close-packed structure, of the same type as the metallurgical phase, up to about 18 at% Sn; and a NiAs-type structure, corresponding to the phase of the equilibrium diagram, with an enlarged homogeneity range. Mechanical properties of thin layers of Au-Sn alloys derived from micro-indentation measurements follow the structural modification with the alloy composition. The ordered intermetallic phases occurring in the equilibrium binary system, in particular the and phases at 8 at% and 16 at% Sn, respectively, are not detected in the electrodeposited alloys. The main factors controlling electrochemical phase formation are pointed out, considering the differences between the phase structure of the electrodeposited alloys and the equilibrium phase diagram.Presented at the 3rd International Symposium on Electrochemical Processing of Tailored Materials held at the 53rd Annual Meeting of the International Society of Electrochemistry, 15–20 September 2002, Düsseldorf, Germany     

Microscopic phenomena found within enclosed surface laser ablation of 20 nm thick aluminium films

This paper investigates the microscopic features which occur when a four-layered film is ablated using Q-switched Nd:YAG laser. The four-layered films consist of a vacuum-deposited aluminium layer (0.02 μm) upon an oriented polypropylene (OPP) film (30 μm) which has been laminated using an inert adhesive and a second OPP film. Laser radiation is absorbed principally by the aluminium layer, melting and/or vaporising it. Upon cooling, the aluminium layer is rearranged into discrete microscopic particles, which give laser-treated areas of the film a transparent appearance. Within the films are found microscopic features, which can be divided into three distinct types: aluminium demetallisation features, polymer distortion features and particle features. Features from each of these categories can exist within a single laser track depending upon the laser parameters used for transparentisation.     

Effect of film thickness on interface and electric properties of BiFeO3 thin films

Bismuth ferrite (BFO) thin films were fabricated by RF-magnetron sputtering deposition method on Pt/Ti/SiO₂/Si(1 0 0) substrate. The effect of the thickness of BFO films varying from 85 to 280 nm on electrical properties was investigated. Saturated coercive fields were found to increase with the BFO film thickness. The dielectric constant of BFO thin films measured at 1 kHz decreased with decreasing thickness from 98 to 86, while tangent losses increased from 0.013 to 0.021. The presence of bismuth oxide at the interface between BFO films and Pt bottom electrodes was responsible for the high leakage currents in thin BFO thin films as was demonstrated by X-ray diffraction, grazing-incident X-ray diffraction, and secondary ion mass spectroscopy analysis.     

Growth of Pt thin films on WSe2

The morphology and structure of Pt deposited on a WSe₂(0 0 0 1) van der Waals surface have been investigated by reflection high energy electron diffraction and scanning tunneling microscopy. At room temperature, the initial growth is characterized by the formation of three-dimensional fcc Pt islands with (1 1 1) orientation. In contrast, at higher temperatures of about 450 °C the formation of a novel chemically ordered Pt-Se alloy is observed. Based on the diffraction patterns, a tetragonal DO₂₂-type structure of a Pt₃Se compound is suggested. With increasing Pt thickness, this chemically ordered alloy disappears and an additional superstructure occurs, which is accompanied by the coalescence of the islands. The observed superstructure is attributed to a strong Se diffusion towards the growth surface, forming most likely a PtSe₂ alloy with the CdI₂-type layered structure on the top surface. Due to the lateral lattice mismatch between the Pt(1 1 1) layers and the PtSe₂(1 1 1) top layer, a Moiré pattern with a period of 1.1 nm is created, which might be used as a long-range atomic pattern for further nanostructure growth.     

Green-emissive transparent BaSi2O5:Eu film phosphor on quartz glass created by a sputtering thermal diffusion process

Eu²⁺-doped BaSi₂O₅ film phosphors on quartz substrates are fabricated by radio-frequency magnetron sputtering thermal diffusion. The BaSi₂O₅: Eu²⁺ phosphor crystals have some preferred orientations that are lattice-spacing matched with the crystallized β- SiO₂ crystals, and they show pore and grain boundary-free morphology with a rod-like shape fused into the crystallized β- SiO₂ crystals. The BaSi₂O₅: Eu²⁺ film phosphor has a high transparency, with a transmittance of about 30% in visible light. The BaSi₂O₅: Eu²⁺ film phosphor shows 510 nm green emission from the f–d transition of the Eu²⁺ ions, and in particular the best sample shows a green photoluminescence brightness of about 5% of a BaSi₂O₅: Eu²⁺ powder phosphor screen. These excellences in optical properties can be explained by less optical scattering at pores or grain boundaries, and less reflection at the continuously index-changed interface.