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Er^{3+}- and Er^{3+}/Yb^{3+}-doped lead germanate glasses that are suitable for use in fibre lasers and optical amplifiers as well as optical waveguide devices have been fabricated and characterized. The absorption spectra from near-infrared to visible were obtained and the Judd-Ofelt parameters were determined from the absorption band. Intense and broad 1.53μm infrared fluorescence and visible upconversion luminescence were observed under 976 nm diode laser excitation. For 1.53μm emission band, the full widths at half-maximum are 36, 37, 51 nm for GPE, GPYE and GPFE samples, respectively. For frequency upconversion emission, the intense bands centred at around 524, 545, 657nm are due to the {}^4S_{3/2}+{}^2H_{11/2}→{}^4I_{15/2} and {}^4F_{9/2}→{}^4I_{15/2} transitions of Er^{3+} ions. The quadratic dependence of the green and red emissions on excitation power indicates that the two-photon absorption process occurs under the 976nm excitation. 相似文献
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Sandwiched structures (a-SiNx/a-Si/a-SiNx) have been fabricated by the plasma enhanced chemical vapour deposition technique. A Si nanocrystal (nc-Si) layer was formed by crystallization of an a-Si layer according to the constrained crystallization principle after quasi-static thermal annealing at 1100℃ for 30 min. Transmission electron microscopy (TEM) and Raman scattering spectroscopy clearly demonstrated that nc-Si grains were formed in the as-deposited a-Si layer after annealing. The density of nc-Si grains is about 1011cm-2 as shown by TEM photographs. Using capacitance-voltage (C-V) measurements we investigated the electrical characteristics of the sandwiched structures. The charge storage phenomenon of the nc-Si layer was observed from the shift of flat-band voltage (VFB) in C-V curves at a high frequency (1 MHz). We estimated the density of nc-Si grains to be about 1011cm-2 from the shift value of VFB, which is in agreement with the result of TEM photographs. At the same time, we found that the shift of VFB increased with the increase of the applied constant dc voltage or the thickness of the nc-Si layer. 相似文献
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用INDO系列方法对C60-进行几何构型优化,得到D3d对称性的构型,表明C60-确实发生了Jahn-Teller畸变,导致单键变短,双键变长,形成10种键,6种不等同碳原子,并以此构型为基础,计算了C60-的电子光谱,与实验结果吻合;同时对光谱进行了理论指认;最后对C60-的3种构型:D5d,D3d,D2h的几何构型、能量、光谱和反应特性进行了分析、比较和总结。 相似文献
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Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanism 下载免费PDF全文
Silicon nanowires have been grown by the thermal decomposition of silane via the vapour-liquid-solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires. 相似文献
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Second harmonic generation of propagating collective excitations in Bose-Einstein condensates 下载免费PDF全文
We consider a possible second harmonic generation (SHG) of propagating collective excitations in a two-component Bose-Einstein condensate (BEC) with repulsive atom-atom interactions. We show that the phase-matching condition for the SHG can be fulfilled if the wave vectors and frequencies of the excitations are chosen adequately from different dispersion branches. We solve the nonlinear amplitude equations for the SHG derived using a method of multiple-scales and provide SHG solutions similar to those obtained for a SHG in nonlinear optical media. A possible experimental realization of the SHG for the propagating collective modes in a cigar-shaped two-component BEC is also discussed. 相似文献
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We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3-V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3-V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors. 相似文献
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We have studied the kinetic behaviours of irreversible aggregation-annihilation models with cluster removals. In the models, an irreversible aggregation reaction occurs between any two clusters of the same species and an irreversible annihilation reaction occurs simultaneously between two different species; meanwhile, the clusters of large size are gradually removed from the system. In a mean-field limit, we obtain the general solutions of the cluster-mass distributions for the cases with an arbitrary removal probability. We found that the cluster-mass distribution of either species satisfies a generalized or modified scaling form. The results also indicate that the evolution behaviours of the systems depend strongly on the details of the reaction events. 相似文献
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NMR analogue of the generalized Grover‘s algorithm of multiple marked states and its application 总被引:3,自引:0,他引:3 下载免费PDF全文
The generalized Grover's algorithm for the case in which there are multiple marked states is demonstrated on a nuclear magnetic resonance (NMR) quantum computer. The Walsh-Hadamard transform and the phase inversion are all replaced. NMR analogues of Einstein-Podolsky-Rosen states (pseudo-EPR states) are synthesized using the above algorithm. 相似文献