Training Effect and Hysteretic Behaviour of Angular Dependence of Exchange Bias in Co/IrMn Bilayers

The training effect and the hysteresis behaviour of the angular dependence of exchange bias are extensively investigated upon the variation of the IrMn layer thickness tXrMn in a series of Co/IrMn bilayers. When tIrMn is very small, both of them are negligible. Then they increase very sharply with increasing tUMn and then reach maxima at almost the same value OftXrMn. Finally they both decrease when tIrMn is further increased. The similar variation trends suggest that these phenomena arise from irreversible change of antiferromagnet spin orientations, according to the thermal activation model.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Phase-Transition and Magnetic Moment of the Gd3+ Ion in the Gd2Fe17 Compound

The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound： the hexagonal Th2Nilr-type structure at high temperatures （above 1243℃）, and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented.     

Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.     

Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.     

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry

We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were fabricated by 193 nm optical lithography and dry etching. Propagation loss measurements show a loss of 3.46 dB/cm for photonic wires and 1.34 dB/cm for ridge waveguides.     

Low-loss, compact waveguiding with TE mode in metal/dielectric waveguides for planar lightwave circuit

We propose a low-loss metal/dielectric waveguide for compact planar lightwave circuit. The basic waveguide structure is a metal-defined high-index-contrast strip waveguide based on silicon/silica. As the guide is designed for TE single mode waveguiding, extremely low propagation loss (e.g. <0.04 dB/cm), very low bend loss (e.g. 0.0043 dB/90°-turn) and small waveguide pitch of zero-crosstalk are theoretically achievable, and can be further improved by compromising with component size and density. Examples of multi-bends and device integration are demonstrated with numerical simulations. The proposal is compatible with silicon technology and appealing for development of silicon-based planar lightwave circuit.     

Flat-topped beam output from a double-clad rectangular dielectric waveguide laser with a high-index inner cladding

A novel method to produce a flat-topped laser beam by using a double-clad rectangular waveguide laser with high-index inner cladding is presented. The waveguide dispersion equation for cosine mode was deduced, the condition for the flattened mode was given out, relative gains for guided modes were calculated numerically and analyzed. Results indicate that a gain advantage for the flattened mode is clear, a flat-topped laser beam can be achieved when the optical confinement factor, the gain intensity and the output coupler are chosen suitably.     

Optically S-polarized surface waves in symmetrical nonlinear sensors: Thermal effects

A surface wave in a planar nonlinear waveguide is a current problem that has several applications in modern electronics and optics such as optical sensors design. The effect of thermal stress on the optical performance of a nonlinear symmetrical sensor is studied. The mathematical forms of the dispersion equation and thermal-stress sensitivity are analytically derived and plotted numerically. It is found that the thermal sensitivity of the sensor can be controlled by tuning the core size, by changing the loading materials, and by carefully selecting the materials.     

Photoluminescence characteristics of ZnO doped with Eu powders

In this work, we have investigated the photoluminescence spectra of europium-doped zinc oxide crystallites prepared by a vibrating milled solid-state reaction method. X-ray diffraction, scanning electron microscopy, luminescence spectra and time-resolved spectra analysis were used to characterize the synthetic ZnO:Eu³⁺ powders. XRD results of the powders showed a typical wurtzite hexagonal crystal structure. A second phase occurred at 5 mol% Eu₂O₃-doped ZnO. The ⁵D₀-⁷F₁ (590 nm) and ⁵D₀-⁷F₂ (609 nm) emission characteristics of Eu³⁺ appeared after quenching with more than 1.5 mol% Eu₂O₃ doping. The Commission Internationale d’Eclairage (CIE) chromaticity coordinates of a ZnO:Eu³⁺ host excited at λ_ex=467 nm revealed a red-shift phenomenon with increase in Eu³⁺ ion doping. The lifetime of the Eu³⁺ ion decreased as the doping concentration was increased from 1.5 to 10 mol%, and the time-resolved ⁵D₀→⁷F₂ transition presents a single-exponential decay behavior.