Optically S-polarized surface waves in symmetrical nonlinear sensors: Thermal effects

A surface wave in a planar nonlinear waveguide is a current problem that has several applications in modern electronics and optics such as optical sensors design. The effect of thermal stress on the optical performance of a nonlinear symmetrical sensor is studied. The mathematical forms of the dispersion equation and thermal-stress sensitivity are analytically derived and plotted numerically. It is found that the thermal sensitivity of the sensor can be controlled by tuning the core size, by changing the loading materials, and by carefully selecting the materials.     

Development of a quality evaluation method for Fructus schisandrae by pressurized capillary electrochromatography

A pressurized CEC (pCEC) method with postcolumn detection cell had been developed for quantifying the lignans from Fructus schisandrae extracts. The effects of different experimental conditions, such as the ACN content of the mobile phase, the concentration and pH of the buffer, the applied voltage, and the supplementary pressure were studied. Five lignans (schisandrin, gomisin A, schisantherin C, deoxyschizandrin, schisandrin B) were baseline separated using a mobile phase of ACN-phosphate buffer (pH 5.4; 5 mM) (40:60 v/v) under -4 kV applied voltage. The method showed the satisfactory retention time and peak area repeatability. The calibration curves were linear in the range 50.0-1000.0 microg/mL for schisandrin, 20.0-500.0 microg/mL for gomisin A, 10.0-200.0 microg/mL for schisantherin C, 20.0-500.0 microg/mL for deoxyschizandrin, and 20.0-500.0 microg/mL for schisandrin B. The correlation coefficients were between 0.9978 and 0.9989. With this pCEC system, fingerprints of F. schisandrae were preliminarily established to distinguish two members S. chinensis (Turcz.) Baill. and S. sphenanthera Rehd. Et Wils. of F. schisandrae by characteristic peaks, and evaluate the quality of various sources of raw materials by determining the contents of the five lignans.     

Thermochemistry of the solid complex Gd(Et<Subscript>2</Subscript>dtc)<Subscript>3</Subscript>(phen)

Summary A ternary solid complex Gd(Et₂dtc)₃(phen) has been obtained from reactions of sodium diethyldithiocarbamate (NaEt₂dtc), 1,10-phenanthroline (phen) and hydrated gadolinium chloride in absolute ethanol. The title complex was described by chemical and elemental analyses, TG-DTG and IR spectrum. The enthalpy change of liquid-phase reaction of formation of the complex, Δ_rH^Θ_m(l), was determined as (-11.628±0.0204) kJ mol^-1 at 298.15 K by a RD-496 III heat conduction microcalorimeter. The enthalpy change of the solid-phase reaction of formation of the complex, Δ_rH^Θ_m(s), was calculated as (145.306±0.519) kJ mol^-1 on the basis of a designed thermochemical cycle. The thermodynamics of reaction of formation of the complex was investigated by changing the temperature of liquid-phase reaction. Fundamental parameters, the apparent reaction rate constant (k), the apparent activation energy (E), the pre-exponential constant (A), the reaction order (n), the activation enthalpy (Δ_rH^Θ_≠), the activation entropy (Δ_rS^Θ_≠), the activation free energy (Δ_rG^Θ_≠) and the enthalpy (Δ_rH^Θ_≠), were obtained by combination of the thermodynamic and kinetic equations for the reaction with the data of thermokinetic experiments. The constant-volume combustion energy of the complex, Δ_cU, was determined as (-18673.71±8.15) kJ mol^-1 by a RBC-II rotating-bomb calorimeter at 298.15 K. Its standard enthalpy of combustion, Δ_cH^Θ_m, and standard enthalpy of formation, Δ_fH^Θ_m, were calculated to be (-18692.92±8.15) kJ mol^-1 and (-51.28±9.17) kJ mol^-1, respectively.     

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O₂ as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD.     

Structural and luminescent characteristics of non-stoichiometric ZnO films by various sputtering and annealing temperatures

ZnO thin films were prepared by reactive RF magnetron sputtering at various deposition temperatures. They were annealed in oxygen ambient at various annealing temperatures. The microstructures and photoluminescence characteristics of ZnO films were investigated. The grain size of the ZnO thin film that was deposited at room temperature (RT) after annealing exceeded that of the film that was deposited at . Excess Zn atoms were considered to be present in the ZnO film that was deposited at RT, so the film was non-stoichiometric ZnO. No visible emission of either of the ZnO films deposited at the two temperatures was observed before annealing. Following annealing at high temperature, the green emission from the ZnO film that was deposited at RT was stronger than that of the film that was deposited at . The relationship between the non-stoichiometry of the thin film and the visible emission was discussed. The luminescent centers that correspond to green emission are defects; the concentration of defects was higher in the ZnO thin film that was deposited at RT than in the film that was deposited at .