Optically S-polarized surface waves in symmetrical nonlinear sensors: Thermal effects

A surface wave in a planar nonlinear waveguide is a current problem that has several applications in modern electronics and optics such as optical sensors design. The effect of thermal stress on the optical performance of a nonlinear symmetrical sensor is studied. The mathematical forms of the dispersion equation and thermal-stress sensitivity are analytically derived and plotted numerically. It is found that the thermal sensitivity of the sensor can be controlled by tuning the core size, by changing the loading materials, and by carefully selecting the materials.     

Structural and luminescent characteristics of non-stoichiometric ZnO films by various sputtering and annealing temperatures

ZnO thin films were prepared by reactive RF magnetron sputtering at various deposition temperatures. They were annealed in oxygen ambient at various annealing temperatures. The microstructures and photoluminescence characteristics of ZnO films were investigated. The grain size of the ZnO thin film that was deposited at room temperature (RT) after annealing exceeded that of the film that was deposited at . Excess Zn atoms were considered to be present in the ZnO film that was deposited at RT, so the film was non-stoichiometric ZnO. No visible emission of either of the ZnO films deposited at the two temperatures was observed before annealing. Following annealing at high temperature, the green emission from the ZnO film that was deposited at RT was stronger than that of the film that was deposited at . The relationship between the non-stoichiometry of the thin film and the visible emission was discussed. The luminescent centers that correspond to green emission are defects; the concentration of defects was higher in the ZnO thin film that was deposited at RT than in the film that was deposited at .     

Controlled visible photoluminescence of ZnO thin films prepared by RF magnetron sputtering

ZnO thin films were prepared by RF magnetron sputtering. The photoluminescence dependence on the growth ambient and annealing temperatures and the atmosphere has been studied. Visible photoluminescence with blue, green, orange, and red emission bands has been demonstrated by controlling the preparation conditions. Complete suppression of the visible emission bands was also realized by annealing the O₂-ambient-grown samples in N₂ atmosphere at higher temperatures, which indicated the preparation of ZnO thin films with high optical quality.     

Fabrication of pellicle beam splitters for optical bus application

The optical bus architecture for on-board applications requires a number of optical splitters with precise split ratios to route part of the input signal. Since hollow metal waveguide provides well collimated beams with very small gap loss, it opens the possibility of inserting discrete optical beam splitters (taps). The optical tap requires low excess loss, polarization insensitivity, temperature stability, minimized walk-off of the propagating beam, and cost effective manufacturing. By benefiting from the mature interference coating technology for polarization insensitivity and temperature stability, we design a pellicle beam splitter based on a static microelec tro-mechanical system (MEMS) and develop processes to fabricate pellicle splitters using wafer level bonding of silicon and glass substrates, with subsequent thinning to 20 μm. With the approaches described in this paper, we have demonstrated optical beam splitters with excess loss of less than 0.17 dB that operate at a data rate of 10 Gb/s showing a clean eye diagram while providing controlled split ratio and polarization insensitivity. We have demonstrated a high yielding MEMS based silicon processing platform which has the potential to provide a cost effective manufacturing solution for optical beam splitters.     

Thermochemistry of the solid complex Gd(Et<Subscript>2</Subscript>dtc)<Subscript>3</Subscript>(phen)

Summary A ternary solid complex Gd(Et₂dtc)₃(phen) has been obtained from reactions of sodium diethyldithiocarbamate (NaEt₂dtc), 1,10-phenanthroline (phen) and hydrated gadolinium chloride in absolute ethanol. The title complex was described by chemical and elemental analyses, TG-DTG and IR spectrum. The enthalpy change of liquid-phase reaction of formation of the complex, Δ_rH^Θ_m(l), was determined as (-11.628±0.0204) kJ mol^-1 at 298.15 K by a RD-496 III heat conduction microcalorimeter. The enthalpy change of the solid-phase reaction of formation of the complex, Δ_rH^Θ_m(s), was calculated as (145.306±0.519) kJ mol^-1 on the basis of a designed thermochemical cycle. The thermodynamics of reaction of formation of the complex was investigated by changing the temperature of liquid-phase reaction. Fundamental parameters, the apparent reaction rate constant (k), the apparent activation energy (E), the pre-exponential constant (A), the reaction order (n), the activation enthalpy (Δ_rH^Θ_≠), the activation entropy (Δ_rS^Θ_≠), the activation free energy (Δ_rG^Θ_≠) and the enthalpy (Δ_rH^Θ_≠), were obtained by combination of the thermodynamic and kinetic equations for the reaction with the data of thermokinetic experiments. The constant-volume combustion energy of the complex, Δ_cU, was determined as (-18673.71±8.15) kJ mol^-1 by a RBC-II rotating-bomb calorimeter at 298.15 K. Its standard enthalpy of combustion, Δ_cH^Θ_m, and standard enthalpy of formation, Δ_fH^Θ_m, were calculated to be (-18692.92±8.15) kJ mol^-1 and (-51.28±9.17) kJ mol^-1, respectively.     

Effects of sic buffer layer on the optical properties of ZnO films grown on Si (1 1 1) substrates

ZnO films have been grown by a sol-gel process on Si (1 1 1) substrates with and without SiC buffer layers. The influence of SiC buffer layer on the optical properties of ZnO films grown on Si (1 1 1) substrates was investigated. The intensity of the E₂ (high) phonon peak in the micro-Raman spectrum of ZnO film with the SiC buffer layer is stronger than that of the sample without the SiC buffer layer, and the breadth of E₂ (high) phonon peak of ZnO film with the SiC buffer layer is narrower than that of the sample without the SiC buffer layer. These results indicated that the crystalline quality of the sample with the SiC buffer layer is better than that of the sample without the SiC buffer layer. In photoluminescence spectra, the intensity of free exciton emission from ZnO films with the SiC buffer was much stronger than that from ZnO film without the SiC buffer layer, while the intensity of deep level emission from sample with the SiC buffer layer was about half of that of sample without the SiC buffer layer. The results indicate the SiC buffer layer improves optical qualities of ZnO films on Si (1 1 1) substrates.