Reprint of : Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

光学渡越辐射测量中能量分辨精度分析

 基于光学渡越辐射原理的用于高能强流电子束束流参数在线测量及诊断系统,具有时间响应快、分辨率高等特点,可以测量电子束的束剖面、发散角、能量等多个参数。分析了测量系统的结构参数（包括了透镜的焦距、成像面位置、CCD像元尺寸）对电子束能量测量精度的影响,并在理论上模拟了电子束的发散角的影响。还根据系统数据的特点,阐述了数据噪声对能量测量结果精度的影响,指出了光学渡越辐射测量中电子束能量分辨精度受到多种因素的影响,需要在数据处理时考虑修正。     

Three-dimensional vector holograms in photoreactive polymer dissolved liquid crystal composite

A detailed analysis of three-dimensional vector holograms is presented which were recorded in a photoreactive polymer dissolved liquid crystal. The diffraction properties of resultant periodic anisotropic structures were investigated. Experimental observations confirmed that the diffraction efficiencies of the structures varied with slight changes of the grating pitch, and also that they strongly depended on the incident angle of the probe beam. These diffraction properties were explained by the finite-difference time-domain optical simulations.     

Polarization‐controlled surface plasmon holography

The ability of generating arbitrary surface plasmon (SP) profiles in a controllable manner is of particular interest in designing plasmonic imaging, lithography and forcing devices. During the past decades, holography has gained enormous interest and achievements in free‐space three‐dimensional displays. Here, by applying a two‐dimensional version of holography, we experimentally demonstrate a generic method to control the SP profiles. Through controlling the orientation angles of two separated slits under circular polarization incidence, the amplitude and phase of the excited SPs can be freely manipulated, which allows direct generation of the desired SP profiles. A series of controllable SP holography schemes are theoretically and experimentally demonstrated, where the holographic SP profiles with high imaging quality can be dynamically modulated by varying the circular polarization handedness or orientation angle of linear polarization. The universality and simplicity of the proposed design strategies would offer promising opportunities for practical plasmonic applications.

     

全息照相实验的探讨

本文简要介绍了全息照相的基本原理,分析了影响激光全息照相实验的诸因素,并对这些因素进行了深入的探讨。实验中采用有良好散射性能的硬币为被拍摄对象,以RSP-I型红敏光致聚合物全息干板为记录介质,使得学生实验成功率大大提高,取得非常好的实验教学效果。     

Unoccupied band dispersion of Si(1 1 1):√3 × √3-Ag surface studied by time- and angle-resolved two-photon photoemission spectroscopy

Band dispersion and transient population of unoccupied electronic states on Si(1 1 1):√3 × √3-Ag surface have been studied by time-resolved (TR) and angle-resolved (AR) two-photon photoemission (2PPE) spectroscopy. The band dispersions originating from unoccupied electronic states have been identified from the comparison between AR-2PPE spectra and angle-resolved one-photon photoemission spectra with synchrotron radiation. A lifetime of unoccupied surface state has been determined from the TR-2PPE spectra.     

Low-energy dipole strength and the critical case of Ca

Recent theoretical work has not led to a consensus regarding the nature of the low-energy E1 strength in the ^40,44,48Ca isotopes, for which high-resolution (γ,γ^′)$(\gamma ,{\gamma }^{\prime })$ data exist. Here we revisit this problem using the first-order quasiparticle random-phase approximation (QRPA) and different interactions. First we examine all even Ca isotopes with N=14–40$N=14\text{–}40$. All isotopes are predicted to undergo dipole transitions at low energy, of large and comparable isoscalar strength but of varying E1 strength. Provided a moderate and uniform energetic shift is introduced to the results, QRPA with the Gogny D1S interaction is able to account for the (γ,γ^′)$(\gamma ,{\gamma }^{\prime })$ data, because, up to N=28$N=28$, it yields a rather pure isoscalar oscillation. A neutron-skin oscillation is anticipated for N?30$N?30$. This contradicts existing predictions that ^44,48Ca develop a neutron-skin mode. Which theoretical result is correct cannot be resolved conclusively using the available data. We propose that alpha-scattering, possibly followed by an electroexcitation experiment, could resolve the situation and thereby help to improve the different models aspiring to describe reliably the low-energy dipole strength of nuclei.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Characterization of new-layered Cr(III)-doped chlorocadmiumphosphate, Cd(HPO4)Cl·[H3N(CH2)6NH3]0.5 crystal by EPR and optical studies

Cr(III)-doped Cd(HPO₄)Cl·[H₃N(CH₂)₆NH₃]_0.5, a new-layered cadmium phosphate, is synthesized in acidic condition at room temperature. EPR and optical studies are carried out at room temperature. Polycrystalline EPR spectrum reveals the presence of two sites of Cr(III) ions in this layered phosphate lattice with zero-field splitting values of 24.24 and 7.65 mT, indicating that Cr(III) ions are in distorted octahedral sites. The optical absorption spectrum of the sample indicates near octahedral symmetry for the dopant ions. Crystal field, inter-electronic and bonding parameters are evaluated by collaborating EPR and optical data. The evaluated parameters suggest the mode of entry of Cr(III) ion into the layered phosphate as interstitial site, and bonding between the metal and ligand is partially covalent.