HL—1装置中心热区电子热传导初步分析

在电流及温度分布满足“不变性”原理的基础上,本文分析了等离子体中心热区的能量平衡,求出了电子热传导系数,根据实验数据拟合出HL-1装置电子热传导系数的定标关系为X_e=6.8(n_(eq1))~(-1.2)。此关系与其他托卡马克装置的结果类似。     

Current R & D activities at TRCRE in polymer processing by EB

The current status of the R & D activities is presented on electron beam processing of polymers being carried out at TRCRE. Topics included are sterilization of medical products, graft polymers for selective separation or absorbents and curing of liquid prepolymer-monomer systems.     

Electron microscopy study of aggregation of microclusters of sulphur

A study of aggregation of sulphur particles in colloidal suspension of sulphur in water-methanol mixture using TEM and electron diffraction is reported. From the micrographs the aggregates formed have been found to be random and tenuous indicating a fractal structure. The electron diffraction patterns of the aggregates are used to study the mechanism of diffusion and reaction limited aggregation.     

Evidence for the short-period oscillations in spin-resolved photoemission of thin Cr(110) films

The spin-resolved electronic structure of thin Cr overlayers on top of the Fe(110) surface was investigated by means of spin- and angle-resolved photoelectron spectroscopy. The initial fast drop of photoelectron spin-polarization at the Fermi level, followed by weak oscillatory behavior with the period of about 2 ML, can give an evidence for the first time spectroscopic observation of the short period oscillations in (110)-oriented thin Cr films.     

Differential density matrix overlap: an index for assessment of electron correlation in atoms and molecules

Summary A new index, called the differential density matrix overlap (DDMO), is proposed for assessment of the electron correlation effects in atoms and molecules. DDMO can be easily calculated as the negative value of the correlation energy derivative with respect to the relative position of the occupied and virtual orbitals. DDMO is transparent to physical interpretation. It can serve as a tool for analyzing the accuracy of approximate electron correlation methods and the validity of the Hartree-Fock wavefunction as the zeroth-order approximation. The properties of DDMO are discussed using test calculations on 11 atoms and molecules as an example.     

The HITRAP project at GSI: trapping and cooling of highly-charged ions in a Penning trap

A decelerator will be installed at GSI in order to provide and study heavy nuclei without or with only few electrons at very low energies or even at rest. Highly-charged ions will be produced by stripping at relativistic energies. After electron cooling and deceleration in the Experimental Storage Ring (ESR) the ions are ejected out of the storage ring at 4 MeV/u and further decelerated in a combination of linear accelerator structures operated in reverse. Finally, they are injected into a Penning trap where the ions are cooled to 4 K by electron cooling in combination with resistive cooling. From here, the ions can be transferred in a quasi DC or in a pulsed mode to different experimental setups. This article describes the technical concepts of this project focused on the Penning trap.      

70 GHz二次谐波倍频回旋速调管研究

 对70 GHz二次谐波倍频回旋速调管高频结构和电子与波互作用进行了研究。研究了TE02模腔体绕射品质因数及模式转化，解决了二次谐波倍频回旋速调管漂移段不能截止70 GHz的TE01模而引起的腔体间高频串扰的问题。分析了注电流、输入功率、电子横纵速度比和电子注引导中心半径等参数对输出功率、增益和效率的影响。针对二次谐波回旋速调管放大器工作频带窄、效率低，进行了高频结构优化设计，显著地展宽了工作频带，提高了互作用效率。在理论分析和高频计算的基础上，建立了注-波互作用PIC（粒子模拟）模型，进行了粒子模拟计算和优化，得到了70 GHz 的二次谐波倍频四腔回旋速调管放大器设计方案。粒子模拟结果表明：在工作电压70 kV，注电流13 A，电子注横向速度与纵向速度比为1.5时，中心频率69.81 GHz输出功率256 kW，带宽160 MHz，电子效率28%，饱和增益大于44 dB。     

Surface reconstructions of InGaAs alloys

The surface reconstructions of In_xGa_1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the In_xGa_1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.     

Characteristic features of carbazole phosphorescence quenching by benzophenone molecules in toluene at 77 K

We have studied the characteristic features of carbazole phosphorescence quenching by benzophenone in toluene at 77 K. We have shown that the decrease in the relative phosphorescence intensity for carbazole (energy donor) by a greater factor than we see for the relative change in its decay time is due to the fact that a change in the phosphorescence decay time occurs only for carbazole molecules participating in triplet-triplet energy transfer, while the substantial decrease in the phosphorescence intensity for carbazole with no change in the phosphorescence decay time is connected with quenching of its singlet states. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 554–556, July–August, 2006.     

Structural studies of Cr-doped mullite derived from single-phase precursors

Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr₂O₃ using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr₂O₃). A second phase, namely θ-(Al,Cr)₂O₃, was revealed by XRD in the sample containing 9.60 wt% Cr₂O₃. The structure of mullites was refined by the Rietveld method, location of Cr³⁺ was performed by the EPR spectroscopy. At low chromium doping level (Cr₂O₃ content less than ∼5 wt%) Cr³⁺ ions were substituted for Al³⁺ in the AlO₆ octahedra of the mullite structure (M1 site). For higher doping level, Cr³⁺ ions were additionally substituted for Al³⁺ in the AlO₆ octahedra of the second phase [θ-(Al,Cr)₂O₃ at 1400 °C, or α-(Al,Cr)₂O₃ at 1600 °C] which segregated in the system. Substitution of Cr³⁺ for Al³⁺ on M1 site in the mullite structure resulted in increase of average distances in (M1)O₆ octahedron and decrease of average distances in T*O₄ tetrahedron, while average distances in TO₄ tetrahedron stayed almost constant.