Prediction of Γ-L and L-X crossovers in Ga<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>Sb alloys by empirical pseudopotential method

Using empirical pseudopotential method Γ-L crossover is found for the Ga_0.74Al_0.26Sb. The conduction band minimum is observed to switch at the (0.87, 0, 0) point for Ga_0.51Al_0.49Sb which shifts to the X point for Ga_0.21Al_0.79Sb and remains at X leading finally to indirect band gap in AlSb. Band structure calculations for a large number of alloys are performed and bowing parameters b_X and b_L are proposed for the E_X and E_L respectively. Our findings may serve as directive to select the materials in a range of composition to examine the bowing parameters and thereby effective mass experimentally for the Ga_xAl_1-xSb alloys.     

Reprint of : Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

光学渡越辐射测量中能量分辨精度分析

 基于光学渡越辐射原理的用于高能强流电子束束流参数在线测量及诊断系统,具有时间响应快、分辨率高等特点,可以测量电子束的束剖面、发散角、能量等多个参数。分析了测量系统的结构参数（包括了透镜的焦距、成像面位置、CCD像元尺寸）对电子束能量测量精度的影响,并在理论上模拟了电子束的发散角的影响。还根据系统数据的特点,阐述了数据噪声对能量测量结果精度的影响,指出了光学渡越辐射测量中电子束能量分辨精度受到多种因素的影响,需要在数据处理时考虑修正。     

Unoccupied band dispersion of Si(1 1 1):√3 × √3-Ag surface studied by time- and angle-resolved two-photon photoemission spectroscopy

Band dispersion and transient population of unoccupied electronic states on Si(1 1 1):√3 × √3-Ag surface have been studied by time-resolved (TR) and angle-resolved (AR) two-photon photoemission (2PPE) spectroscopy. The band dispersions originating from unoccupied electronic states have been identified from the comparison between AR-2PPE spectra and angle-resolved one-photon photoemission spectra with synchrotron radiation. A lifetime of unoccupied surface state has been determined from the TR-2PPE spectra.     

Low-energy dipole strength and the critical case of Ca

Recent theoretical work has not led to a consensus regarding the nature of the low-energy E1 strength in the ^40,44,48Ca isotopes, for which high-resolution (γ,γ^′)$(\gamma ,{\gamma }^{\prime })$ data exist. Here we revisit this problem using the first-order quasiparticle random-phase approximation (QRPA) and different interactions. First we examine all even Ca isotopes with N=14–40$N=14\text{–}40$. All isotopes are predicted to undergo dipole transitions at low energy, of large and comparable isoscalar strength but of varying E1 strength. Provided a moderate and uniform energetic shift is introduced to the results, QRPA with the Gogny D1S interaction is able to account for the (γ,γ^′)$(\gamma ,{\gamma }^{\prime })$ data, because, up to N=28$N=28$, it yields a rather pure isoscalar oscillation. A neutron-skin oscillation is anticipated for N?30$N?30$. This contradicts existing predictions that ^44,48Ca develop a neutron-skin mode. Which theoretical result is correct cannot be resolved conclusively using the available data. We propose that alpha-scattering, possibly followed by an electroexcitation experiment, could resolve the situation and thereby help to improve the different models aspiring to describe reliably the low-energy dipole strength of nuclei.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Characterization of new-layered Cr(III)-doped chlorocadmiumphosphate, Cd(HPO4)Cl·[H3N(CH2)6NH3]0.5 crystal by EPR and optical studies

Cr(III)-doped Cd(HPO₄)Cl·[H₃N(CH₂)₆NH₃]_0.5, a new-layered cadmium phosphate, is synthesized in acidic condition at room temperature. EPR and optical studies are carried out at room temperature. Polycrystalline EPR spectrum reveals the presence of two sites of Cr(III) ions in this layered phosphate lattice with zero-field splitting values of 24.24 and 7.65 mT, indicating that Cr(III) ions are in distorted octahedral sites. The optical absorption spectrum of the sample indicates near octahedral symmetry for the dopant ions. Crystal field, inter-electronic and bonding parameters are evaluated by collaborating EPR and optical data. The evaluated parameters suggest the mode of entry of Cr(III) ion into the layered phosphate as interstitial site, and bonding between the metal and ligand is partially covalent.     

Confinement of the field electron emission to atomic sites on ultra sharp tips

The spatially controlled field assisted etching method for sharpening metallic tips, in a field ion microscope (FIM), is used to study the evolution of the field emission when the tip apex radius is decreased below 1 nm. Unlike the conventional image formation in a field emission microscope (FEM), we demonstrate that at this scale the field emission is rather confined to atomic sites. A single atom apex fabricated at the end of such tips exhibits an outstanding brightness compared to other atomic tips. The measurements have been repeated for two double atom tips, with different atom-atom separations, and images of atomic field emission localization have also been obtained. We have found that the field emission intensity alternates between adjacent atoms when the applied voltage is gradually increased beyond a threshold value.     

基于Stark展宽的TIG焊接电弧三维电子密度测量研究

焊接电弧三维电子密度的测量对于焊接质量控制具有重要意义,通过光谱仪采集电弧弦方向特征谱线轮廓,利用多项式拟合对径向采集数据进行降噪及平滑处理,通过Abel逆变换法重新构建径向光谱发射系数谱线轮廓,采用傅里叶变换从重建光谱轮廓中分离出Lorentz线形,获得Stark展宽,最终计算了TIG焊电弧等离子体电子密度的三维空间分布。