A computational investigation of topological insulator Bi2Se3 film

Topological insulators have a bulk band gap like an ordinary insulator and conducting states on their edge or surface which are formed by spin–orbit coupling and protected by time-reversal symmetry. We report theoretical analyses of the electronic properties of three-dimensional topological insulator Bi₂Se₃ film on different energies. We choose five different energies (–123, –75, 0, 180, 350 meV) around the Dirac cone (–113 meV). When energy is close to the Dirac cone, the properties of wave function match the topological insulator’s hallmark perfectly. When energy is far way from the Dirac cone, the hallmark of topological insulator is broken and the helical states disappear. The electronic properties of helical states are dug out from the calculation results. The spin-momentum locking of the helical states are confirmed. A 3-fold symmetry of the helical states in Brillouin zone is also revealed. The penetration depth of the helical states is two quintuple layers which can be identified from layer projection. The charge contribution on each quintuple layer depends on the energy, and has completely different behavior along K and M direction in Brillouin zone. From orbital projection, we can find that the maximum charge contribution of the helical states is p_z orbit and the charge contribution on p_yand p_x orbits have 2-fold symmetry.     

Waiting times of entangled electrons in normal–superconducting junctions

We consider a normal–superconducting junction in order to investigate the effect of new physical ingredients on waiting times. First, we study the interplay between Andreev and specular scattering at the interface on the distribution of waiting times of electrons or holes separately. In that case the distribution is not altered dramatically compared to the case of a single quantum channel with a quantum point contact since the interface acts as an Andreev mirror for holes. We then consider a fully entangled state originating from splitting of Cooper pairs at the interface and demonstrate a significant enhancement of the probability to detect two consecutive electrons in a short time interval. Finally, we discuss the electronic waiting time distribution in the more realistic situation of partial entanglement.     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.     

Sizable band gap in organometallic topological insulator

Based on first principle calculation when Ceperley–Alder and Perdew–Burke–Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin–orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin–orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.     

PN结电容与正向直流偏压的关系

半导体PN结具有电容的性质．在正向直流偏压下,理论计算表明,PN结扩散电容的对数与正向偏压成正比．实验发现,当正向偏压小于30mV时,这种线性关系是成立的;当正向偏压大于30mV时,会偏离这种线性关系．由于PN结还具有电阻特性,对交流信号的相位有影响．随着正向偏压增大,交流信号的相位变化出现一极值．如果将PN结等效为一个电容和一个电阻并联,就可以定性解释这种变化关系．     

离子液体[BDMIM]PF6修饰碳糊电极的制备及其电化学性能

以离子液体1,2-二甲基-3-丁基咪唑六氟磷酸盐（[BDMIM]PF6）代替传统液态石蜡为粘合剂与石墨粉相混合,制备了一种新型的离子液体修饰碳糊电极（IL/CPE）。采用扫描电子显微镜分别对其表面形貌和石蜡碳糊电极（CPE）表面形貌进行了表征。以亚铁氰化钾为电化学探针对IL/CPE的电化学行为进行了研究,并与CPE进行了比较。结果表明,[BDMIM]PF6由于具有较高的导电性,使IL/CPE比CPE具有更高的导电效率,铁氰化钾在电极上的可逆性变好,ΔEP值变小,峰电流响应增加10倍,电极过程由CPE上的吸附控制变为扩散控制,根据计时库仑法求解出铁氰化钾的扩散系数为5.52×10^-6cm2/s（25℃）。电化学交流阻抗图亦表明与不导电的液态石蜡油相比,离子液体的存在加快了电子传递。     

微波场中Josephson结的微波发射与吸收研究

采用数值仿真方法,研究微波场中约瑟夫森结微波感应台阶处的功率特性。发现微波场中约瑟夫森结不止吸收辐射,也发射辐射的情况。得到微波辐照和结电阻对功率吸收和发射的影响规律。结果表明,处于发射功率的状态对应的偏置电流范围占整个台阶总电流范围的比例可以趋于50%。这一发现对约瑟夫森结理论和应用研究具有重要的意义。     

不同应用条件下最佳绝缘子构型

绝缘子的沿面闪络制约着脉冲功率系统向高电压、大电流方向发展,总结了几种实际应用条件下的最佳绝缘子构型,并对不同角度下绝缘子表面的带电情况进行了分析。结果表明,表面电荷对不同绝缘子构型的性能起着至关重要的作用,需要根据不同的应用条件来开展实验研究以确定最佳的绝缘子构型。     

同步镀铋膜差分脉冲伏安法测试土壤中铬

采用同步镀铋膜法修饰玻碳电极及差分脉冲溶出伏安法测试土壤中Cr。在优化的实验条件下,以KNO3为支持电解质,NaAc-HAc(pH=5.5)为缓冲溶液的铋膜上得到Cr溶出特征峰电位为-1.14V,线性方程为:I=0.0747C+0.31054,相关系数为0.9981,检出限为0.001μg/L,线性范围为0.01—60μg/L,RSD=2.47%,该方法简单快速,准确度和精密度均符合要求,回收率为96.7%—104.5%。     

Relaxation dynamics in a stochastic bosonic Josephson junction

We consider a bosonic Josephson junction in the Bose-Hubbard two-mode approximation where some of the parameters are corrupted by physically meaningful noise processes and study the corresponding relaxation dynamics towards its equilibrium state. We show with numerical simulations that this model can essentially capture all the important features observed in a recent experiment regarding the relaxation dynamics in one-dimensional bosonic Josephson junctions, namely the damped oscillations of the population imbalance and the relative phase, as well as the large final coherence factor. We expect that this work will further motivate research about the origin of relaxation mechanism in these systems.