MOSFET调制器的实验研究

 介绍了MOSFET调制器的基本原理,并对其并联分流和感应叠加两种开关结构进行了实验研究。基于可编辑逻辑器件设计了其触发电路,驱动电路采用高速MOSFET对管组成的推挽输出形式,加快了MOSFET的开关速度。利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真,结果表明,加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压。实验中,电流波形用Pearson线圈测量,用3个MOSFET并联作开关,当电容充电电压为450 V,负载为30 Ω时,脉冲电流13 A,前沿20 ns,平顶约80 ns;用3个单元调制器感应叠加,当电容充电电压为450 A,负载为30 Ω时,脉冲电流强度为40 A,前沿25 ns,平顶约70 ns。     

Compact multimode interference coupler with tapered waveguide geometry

In this paper, a novel MMI coupler, based on general interference, with tapered waveguide geometry has been proposed for reduction of coupling length. The coupling characteristics and power imbalance of the proposed structure are compared with conventional MMI structures by using a mathematical model based on sinusoidal modes. It is seen that the beat length for tapered MMI coupler with angle of taper ∼1.05° is reduced by ∼24% of that of conventional MMI coupler and the coupling characteristics obtained with the mathematical model, match well with those obtained by more sophisticated BPM computer aided design software. The power imbalance for tapered 3 dB MMI coupler is more sensitive to the wavelength than that for conventional 3 dB MMI coupler and variation of power imbalance with fabrication tolerance for both the MMI coupler is almost same.     

单分子器件与电极间耦合界面对电子传输的影响

利用自恰tight-binding 理论，对由phenalenyl分子构成的全对称三电极纳米单分子器件的电子传导特性进行了理论研究. 通过改变电极与分子界面上的耦合，得出了分子与原子线电极间耦合强度变化对电子传输的影响. 结果显示电子通过phenalenyl分子器件的概率随着分子与电极的耦合强度变弱而减小. 当耦合强度变大时，不仅电子通过phenalenyl分子器件的概率变大，而且在较宽的能带内电子都可以通过phenalenyl分子. 所得结果还揭示出在特定的能区，对称三电极phenalenyl分子可以构成一个无源正负能量开关器件的新特性.     

The research on semi-active muffler device of controlling the exhaust pipe’s low-frequency noise

In order to control low frequency noise in exhaust pipe, this paper puts forward a new concept of H-Q tube based semi-active muffler device. The semi-active muffler device and bench testing system have been designed and operated. Finite element simulation study on semi-active muffler and experimental study on semi-active muffler and passive muffler have been carried on. The effect of simulation and experiment are consistent. The semi-active muffler device acts well in low frequency band, especially between 50 Hz and 150 Hz. The average level of noise reduction is around 35 dB, which is much better than passive muffler. Between 150 Hz and 350 Hz, semi-active muffler has a better performance than passive muffler; above 350 Hz, it has worse performance compared with the passive muffler.     

掺铒聚合物狭缝波导放大器的增益特性研究

设计了一种高浓度稀土铒掺杂聚合物填充硅狭缝结构的平面光波导放大器（工作波长1 550 nm,泵浦波长1 480 nm）,能够在低泵浦下获得高增益,可以应用于硅基光互联的损耗补偿。通过扫描电镜照片观察发现,合成的铒掺杂聚合物材料具有良好的纳米狭缝填充能力。考虑铒离子的合作上转换和激发态吸收,利用铒离子四能级跃迁模型,建立原子速率方程和光功率传输方程,数值仿真分析了聚合物光学性质、狭缝波导结构参数及信号光泵浦光功率等放大器增益特性的影响因素。这种具有纳米截面尺寸的光波导放大器,获得4.5 dB的信号光相对增益仅需要1.5 mW的泵浦光,展现了良好的集成光学应用前景。为了进一步提高增益,引入了多层狭缝结构,四层狭缝波导的重叠积分因子比一层狭缝的高42%。     

Numerical study of InGaN tandem solar cells with intermediate bands

Theoretical investigations of InGaN tandem solar cells with intermediate bands (IBs) have been conducted through calculating the diode equation taking into account the radiative and nonradiative recombination currents. The calculated maximum ef?ciencies of the double‐junction cell with one IB in each subcell are 57.85% and 68.37% under AM1.5G one‐sun and 46000‐sun illuminations, respectively. It has also been observed that the combined device with the top‐cell bandgaps of 2.9–3.4 eV (2.6–3.4 eV for full concentration) may have an opportunity to realize the application of over 50% efficiency. We suggest that the optimized width of the IB layer be designed in the range of 1–6 μm if its absorption coefficient is 10⁴–10⁵ cm^–1 in the IB region.     

The electronic transport properties in C60 molecular devices with different contact distances

By applying non-equilibrium Green?s functions in combination with the density-functional theory, we investigate the transport behavior of molecular devices composed by metal electrode-C₆₀ molecule-metal electrode. Our results show that the electronic transport properties are affected obviously by the different contact distances between the electrodes, and the tunneling current decreases approximately exponentially at a certain bias with the increasing of contact distances. The negative differential resistance is observed and the peak-to-valley ratio can be tuned by different contact distances. The mechanisms of the contact distance effect and the negative differential resistance behavior are proposed.     

功率器件热性能的测试与分析

本文利用红外热像仪测温系统,系统地对三种典型的航天用功率器件进行了测试和分析。研究结果对功率器件可靠性分析具有重要的作用。同时对功率器件进行了数值模拟,在定性方面可为器件的热设计提供改进方向和合理方案。     

半导体量子电子和光电子器件

本阐述了半导体异质结构电子的量子特性,如电子波输运,库仑阻塞效应等,介绍了几种新颖,典型的量子电子器件和量子光电子器件的物理模型和基本原理,这些器件包括了单电子晶体管,共振隧穿二极管,高电子迁移率晶体管,δ掺杂场效应晶体管,量子点元胞自动机,量子阱红外探测器,埋沟异质结半导体激光器,量子级联激光器等,给出了作在半导体量子器件物理方面的最新研究结果。     

智能型高速CCD相机的时序电路的研制

首先详细地介绍了几种传统时序电路的实现方法与各自存在的优缺点 ,然后对 isp L SI器件的性能特点以及 TDI- CCD相机的组成结构、工作原理进行了简要地阐述 ,最后对采用 isp L SI器件实现 CCD相机时序电路的全过程进行了全面、细致地分析。本文结合实际课题 ,已由在线可编程大规模逻辑器件实现了高速 TDI- CCD相机的时序电路。此相机系统具有一些重要参数 (行周期、TDI级数、视频信号的增益、偏置参数 ) ,并可以灵活控制。同时该系统又具有高可靠性、高稳定性、低功耗等特点。