Co掺杂对YBa2 Cu3 O7-δ电阻率与塞贝克系数的影响

用固态反应法制备了YBa2Cu3-xCoxO7-δ(x=0.0,0.1,0.2,0.5)样品,研究了Co掺杂对YBa2Cu3O7-δ高温区的电阻率和塞贝克系数的影响。随着Co含量的增加,样品的电阻率和塞贝克系数逐渐增大,从金属性导电转变为p型半导体导电。x=0.2和0.5样品的电导活化能在500K处发生突变,高温区的活化能大于低温区的活化能。通过塞贝克系数与温度的关系,计算出x=0.2和0.5样品的费米能级分别为0.02和0.12 eV。当温度高于650-700K时,氧脱附显著影响样品的电输运性质,导致电阻率和塞贝克系数随温度增加而增大。     

Electrochemical Impedance Spectroscopy in the Characterisation and Application of Modified Electrodes for Electrochemical Sensors and Biosensors

Electrochemical impedance spectroscopy is finding increasing use in electrochemical sensors and biosensors, both in their characterisation, including during successive phases of sensor construction, and in application as a quantitative determination technique. Much of the published work continues to make little use of all the information that can be furnished by full physical modelling and analysis of the impedance spectra, and thus does not throw more than a superficial light on the processes occurring. Analysis is often restricted to estimating values of charge transfer resistances without interpretation and ignoring other electrical equivalent circuit components. In this article, the important basics of electrochemical impedance for electrochemical sensors and biosensors are presented, focussing on the necessary electrical circuit elements. This is followed by examples of its use in characterisation and in electroanalytical applications, at the same time demonstrating how fuller use can be made of the information obtained from complete modelling and analysis of the data in the spectra, the values of the circuit components and their physical meaning. The future outlook for electrochemical impedance in the sensing field is discussed.     

Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS

Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance-voltage (C-V) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl₂-dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl₂ treatments.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

Theoretical study of metal-insulator transition in rhombohedral vanadium sesquioxide

The electronic structure and the metal-insulator transition (MIT) of V₂O₃ are investigated in the framework of density functional theory and GGA+U. It is found that, both the insulating and metallic phases can be realized in rhombohedral structure by varying the on-site Coulomb interaction, and the MIT in V₂O₃ can take place without any structure phase transition. Our calculated energy gap (0.63 eV) agrees with experimental result very well. The metallic phase exhibits high spin (S=1) character, but it becomes S=1/2 in insulating phase. According to our analysis, the Mott-Hubbard and the charge-transfer induce the MIT together, and it supports the mechanism postulated by Tanaka (2002) [11].     

无障板圆形活塞换能器的辐射阻抗*

辐射阻抗是换能器的最重要辐射声场特性参数之一,影响着换能器的谐振频率、频带宽度、效率以及辐射声功率等。经典声学理论用一阶贝塞尔函数和斯特鲁夫函数给出了圆形活塞换能器辐射阻抗的数学表达式,但仅适用于无限大障板条件。该文用ANSYS有限元软件计算了无障板圆形活塞换能器的辐射阻抗,给出了数值解结果,通过与无限大障板条件下的理论结果相比较,显示了二者之间的偏离情况,尤其是在低频时差异显著。为了借助MATLAB工具模拟无障板圆形活塞换能器的辐射阻抗,并给出较准确的数学表达,选择了一系列初等函数以及它们的复合函数进行曲线拟合,最终给出了辐射阻和辐射抗关于ka的函数表达式,在ka值从0.08到20范围内与有限元计算结果很好吻合。     

Monte Carlo simulations of electron dynamics in N2/CO2 mixtures

Motivated by experimental investigations of electrical discharges in N₂/CO₂/H₂O, Monte Carlo (MC) electron dynamics simulations in atmospheric N₂/CO₂ mixtures were performed. The goal was to obtain electron energy distribution functions (EEDFs), mean free path, drift velocity, collision frequency and mean energy of electrons, rate coefficients of electron-impact reactions, ionisation and attachment coefficients, as functions of the reduced electric field strength (E/N) and of the concentration of individual gas components. The results obtained by MC simulations were fitted with polynomials of up to the 3rd order with reasonable accuracy for E/N above 80 Td. The studied parameters below 80 Td were strongly non-linear as functions of E/N. This is mostly due to the influence of elastic collisions of electrons with CO₂ molecules prevailing in CO₂-dominant mixtures for E/N < 40 Td, and vibrational excitation collisions of N₂ species prevailing in N₂-dominant mixtures for E/N from 40 to 80 Td. The effect of these electron-impact processes was specific for each of the studied parameters.     

Ionic conduction and effect of cation doping in Tl<Subscript>4</Subscript>HgI<Subscript>6</Subscript>

The ionic conduction properties of undoped and doped Tl₄HgI₆ were investigated using electrical conductivity, dielectrics, differential scanning calorimetry, and X-ray diffraction techniques. The heavy Tl⁺-ions diffusion was activated at high temperature, whereas low conductivity at the lower temperature suggested electronic contribution in undoped Tl₄HgI₆. The partial replacement of heavy Tl⁺ ion by suitable cations (Ag⁺ and Cu⁺) enhanced the conductivity by several orders of magnitude, whereas diminution in conductivity results with increasing dopants’ concentration in Tl₄HgI₆. These results can be interpreted in terms of a lattice contraction and vacancy–vacancy interaction (leading to the cluster formation), respectively. The dielectric values of undoped Tl₄HgI₆ system gradually increasing with temperature, followed by a sharp change, were observed around 385 K and can be explained on the basis of increasing number of space charge polarization and ions jump orientation effects. The activation energy of undoped and doped Tl₄HgI₆ systems were calculated, and it was found that ionic conductivity activation energy for 5 mol% of cation dopants is much lower than that of undoped one, and also 10 mol% doped Tl₄HgI₆ systems.     

基于缺陷地结构的微带低通滤波器设计

提出了一种具有宽带带外抑制的小型化微带低通滤波器。该滤波器由缺陷地结构和两阶阶跃阻抗单元结构构成。利用ANSYS HFSS建立三维全波电磁模型并仿真优化,仿真结果表明：该低通滤波器的截止频率为1.4 GHz,通带宽度为0~1.4 GHz,通带内的插入损耗小于0.5 dB,带外抑制频率范围为2.1~11 GHz,在阻带范围内的带外抑制能力接近20 dB。为验证仿真和测试结果,加工并测试了经全波电磁优化后的缺陷地结构微带低通滤波器。测试结果和仿真结果吻合得较好,证明了所提出的缺陷地结构在实现滤波器小型化和宽阻抗带宽上有着重要的作用,能够使该滤波器具有较好的低通滤波特性。     

A non-thermal chemical synthesis of hydrophilic and amorphous cobalt oxide films for supercapacitor application

Present work explored a room temperature, simple and low cost chemical route for the preparation of hydrophilic cobalt oxide films from alkaline cobalt chloride (CoCl₂:6H₂O) and double distilled water precursor solutions. As-deposited cobalt oxide films showed amorphous nature, which is one of the prime requirements for supercapacitor, as confirmed from X-ray diffraction studies. Changes in direct band gap energy and electrical resistivity of as-deposited cobalt oxide films were confirmed after annealing. Spherical grains of about 40-50 nm diameters were uniformly distributed over the substrate surface. Surface wettability studied in contact with liquid interface, showed hydrophilic nature as water contact angle was <90°. Finally, presence of cobalt-oxygen covalent bond was observed from Raman shift experiment.