采用中子衍射实验解析PbS的原子间力常数

使用日本原子能研究开发机构里设置的高分解能粉末中子衍射装置, 在 15 K 和 294 K 温度下对 PbS 进行了中子衍射实验。在 15 K 和 294 K 温度里观察到了明显的振动形状的热漫散射。 所观察到的漫散射强度可由原子间热振动相关效应的影响来解释。在 294 K 下从原子间相关效应和德拜—劳厄因子的温度参数中获得了 PbS 相邻原子间的力常数。     

共轭高分子链中电荷迁移的热效应

从理论上研究了共轭高聚物链中在电场作用下极化子运动的热效应.基于SSH模型以及通过绝热动力学演化的方法,模拟了共轭高聚物链中极化子在电场作用下从链左端向右端运动的过程.晶格受到的热扰动作用假设为通过局域的晶格范围内原子位移的随机涨落来实现.结果发现,晶格中的局域热涨落对于运动中的极化子而言等效于一个势垒.势垒高度由高分子中受到热扰动的区域的范围大小以及该区域与其周围环境的温差来决定.当分子中存在热吸收不均匀的现象时,链内极化子迁移率在低电场范围内随电场的变化遵循对数曲线变化规律.     

氢分子离子在库仑爆炸中核动力学的同位素效应

在非Born-Oppenheimer近似条件下,通过数值求解一维含时薛定谔方程,理论模拟了H+2和HD+在相同激光条件、相同的核初始振动态条件下的库仑爆炸核动能释放谱.通过比较H+2和HD+库仑爆炸核动能释放谱中谱峰值位置的相对变化,研究了H+2在库仑爆炸中核动力学的同位素效应.数值结果表明:同位素效应在很大程度上依赖于分子离子核初始振动态的选取;特别当初始振动态v=5时,出现了特殊的同位素效应.     

Grain size effects on microstructural stability and creep behaviour of nanotwinned Ni free-standing foils at room temperature

Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials.     

Substituent effects on acidity of aryl‐substituted fluoroalkanes: a computational study

The gas‐phase acidities (GA) of various aryl‐substituted fluoroalkanes, XC₆H₄CH(R¹)R², were calculated at the B3LYP/6‐311 + G(d,p)//B3LYP/6‐311 + G(d,p). The acidity values of alkanes having a common substituent X varied significantly with the change of R¹ and R². Their changes in acidity of 1 and 2 having two strong electron‐withdrawing groups (CF₃ or C₂F₅) at the deprotonation site and 8 , 9 , 10 , 11 having no fluorine atom at β‐position were linearly correlated with the corrected number of fluorine atoms contained in the fluorinated alkyl group (R² > 0.999). On the other hand, the GA values of β‐fluorine substituted alkanes ( 3 , 4 , 5 , 6 , 7 ) deviated in a stronger acid direction from the line. The enhanced acidity was attributed to the additional stabilization of the conjugate anion caused by the β‐fluorine negative hyperconjugation. The magnitude of β‐fluorine negative hyperconjugation of the fluorinated alkyl group (ΔG^o_β‐F) given by the deviations from the line decreased with increasing electron‐withdrawing ability of substituent X on the benzene ring, indicating that β‐fluorine negative hyperconjugation competes with the electronic effect of the substituent X. The GA_el values obtained by subtraction ΔG^o_β‐F from the apparent GA value were successfully correlated in terms of the Yukawa–Tsuno equation. The obtained ρ_el and r^?_el values were linearly related to the GA_el value of the respective phenyl‐substituted fluoroalkanes, supporting our previous conclusion that the ρ and r^? values for the substituent effect caused by the electronic effects of the substituent on the acidity are determined by the thermodynamic stability of the parent ion (ring substituent = H). Copyright © 2015 John Wiley & Sons, Ltd.     

叶黄素聚集体吸收光谱的实验分析与理论模拟

分子聚集体表现出单分子所不具备的特有功能,利用吸收光谱对聚集体分子结构特性的研究是理解其电子和能量转移功能的基础。实验中利用紫外-可见分光光度计,检测了叶黄素在乙醇溶液中的单体吸收谱和在1∶1乙醇水溶液中的聚集体吸收谱。并通过对叶黄素单体吸收谱的高斯分解,获得了激发态的振动能级结构参数。理论上采用时间相关函数描述的吸收谱线和Frenkel激子模型,通过模拟单分子吸收光谱,获得了叶黄素分子的激发能、特征模振动频率、Huang-Phys因子等参数。再利用这些参数进行了聚集体分子光谱的模拟,分析了叶黄素聚集体的分子结构影响光谱变化的原因。结果表明,(1) 分子间的相互作用是决定吸收光谱峰位移动的主要原因,实验中叶黄素H-聚集体的吸收光谱较单体蓝移了77 nm,模拟显示相互作用在2 000 cm-1附近;(2) 聚集体分子个数越多,聚集协作效应越大,吸收光谱半高宽变小,同时吸收峰进一步蓝移;(3) 环境的无序度对吸收光谱的半高宽也存在较大的影响,无序度越大,吸收光谱半高宽越大。实验结果为进一步研究聚集体在生物系统和材料系统中的功能提供了理论依据。     

DLA光源质量对光栅-外腔谱合成系统光束质量的影响

在二极管激光阵列(DLA)光栅-外腔谱合成系统中,由于DLA存在子单元光束发散角、“smile”效应的位置偏差及指向性偏差等因素的综合作用,将导致合成光束的光束质量降低。综合考虑DLA子单元光束发散角、“smile”效应等因素对谱合成系统中光束传输特性的影响,建立了DLA光栅-外腔谱合成系统的光传输模型,进而对谱合成系统中DLA子单元光束发散角、“smile”效应的位置偏差及指向性偏差等因素对合成光束的光束质量影响进行了定量分析。结果表明,DLA光源质量会明显影响合成光束的光束质量：DLA子单元光束发散角和“smile”效应引入的指向性偏差越大,合成光束的光束质量就越差;“smile”效应引入的位置偏差在合束方向上对合成光束的光束质量没有影响,而在非合束方向上引入的位置偏差将会明显降低合成光束的光束质量。在实际工作应用中,需要采取措施提高DLA光源质量,以减小对合成光束的光束质量影响。     

局域共振单元与薄膜复合声子晶体板结构的低频降噪

提出了一种局域共振单元复合声子晶体板结构,并结合有限元对晶体板结构的带隙特性、隔声性能进行了分析.结果表明,共振带隙的产生是由共振单元与板中传播的弹性波相互耦合造成的,耦合强度直接影响共振频率和带隙宽度,隔声效果与薄膜的厚度直接相关.通过改变薄膜的厚度可以将隔声效果调节到满足机舱飞行员正常驾驶的要求.该结构在200dB以下具有良好的隔振效果,最大隔声量达到150dB.该研究为获得良好的隔声效果提供了理论支持,在航空发动机减振降噪方面具有潜在的应用前景.     

单臂压缩感知鬼成像的光强扩散函数分析法

为了提高单臂压缩感知鬼成像的成像质量,减少成像系统本身和外部环境的干扰,提出了一种光强扩散函数分析方法.在单臂压缩感知鬼成像原理的基础上分析了成像过程,指出降低成像质量的主要因素是菲涅尔衍射和大气湍流.针对这两个因素,推导并分析了光强度扩散函数的公式,研究透镜的焦距与口径之比和照明光源的波长对鬼成像的影响.仿真结果表明:在单臂压缩感知鬼成像中,使用焦距与尺寸半径之比在2~5范围内的成像投影透镜可以消除衍射效应的影响;短波长光源适用于大气湍流较弱时的成像,长波长光源在大气湍流较强时对干扰有更好的耐受能力.该方法可以有效地提高成像质量并优化成像系统.     

Na原子及类Na离子Fe15+价壳层光电离过程的理论研究

采用相对论多组态Dirac-Fock理论,计算了Na原子及类Na离子Fe15++基态的光电离截面.对Na原子,考虑相对论效应与弛豫效应,本文计算结果与前人计算结果和实验测量结果一致性较好.对Fe15+离子的最外价电子,相对论效应对其光电离过程产生主要影响,而轨道弛豫效应则可忽略不计;对中性Na原子则情况完全不同:轨道弛豫效应的影响非常显著,但其光电离截面对相对论效应仅有非常微弱的依赖.