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51.
This paper deals with the DC monopolar corona discharge in wire-to-plane geometry under variable humid air conditions. The classical formulas of Townsend commonly used for the current–voltage characteristics were used to determine the various corona parameters for the both polarities of the corona discharge. A circular biased probe has been adapted to the plane and is used to measure the ground plane current density and electric field during the monopolar corona discharge. A new approach to the problem of corona discharge in transmission system has been described in this paper. The effect of varying the humidity and wires diameter is also investigated. The values of the electric field and the current density are maximum beneath the corona wire and decrease when moving away from them and the current–voltage characteristics follow the quadratic Townsend's law. The experimental results show that the monopolar corona discharge is strongly affected by the air humidity. The current density and the electric field are measured and compared with the computed values. The agreement between the calculated values and those obtained experimentally is satisfactory. The per unit electric field and current density are also represented by a unique function. 相似文献
52.
The response of field mill type electrostatic fieldmeters to alternating electric fields is limited by the chopping frequency. Measurements reported here show that alternating frequencies at the chopping frequency, and related harmonics, can create confusing low frequency outputs. Hence care is needed for interpreting observations where such alternating electric fields may be present. 相似文献
53.
针对现有运载火箭试验数据管理及可视化系统依赖于第三方功能插件,未实现纯浏览器端三维模型渲染及交互,系统对运行环境依赖性强、部署和维护成本高等问题,设计了基于JavaScript框架ExtJS和WebGL框架three.js的运载火箭试验数据管理及可视化系统。首先基于B/S架构设计了系统总体框架,然后针对二维图形数据传输延迟问题设计了基于Web Worker的数据读取方案,最后针对浏览器端三维模型渲染需求提出了基于VTK模型的转换算法,设计了三维模型渲染及交互方案。试验结果显示,本系统不依赖于运行环境和功能插件,能实现浏览器端二维图形和三维模型渲染及流畅交互,为兼容国产化操作系统、降低部署和维护成本创造了条件。 相似文献
54.
In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications. 相似文献
55.
《Current Applied Physics》2015,15(11):1318-1323
The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (Iex). The changes in the ideality factor (n) and short circuit current (JSC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (FJ) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs. 相似文献
56.
为了探究钢筋混凝土桥梁抗力退化对桥梁可靠性能的影响,综合考虑一般大气环境下混凝土强度、钢筋强度、混凝土与钢筋黏结性能的降低,建立普通钢筋混凝土桥梁的抗力退化时变模型,分析规范车辆荷载作用的桥梁时变可靠度。研究结果表明,(1)一般大气环境下,桥梁抗力随着服役时间的增加而减小,其中钢筋强度退化对桥梁抗力的影响最大,其次是钢筋与混凝土黏结性能降低,而混凝土强度退化对桥梁抗力的影响相对较小; (2)桥梁可靠指标随着服役时间的增加而减小,密集行车占比越大,桥梁承载能力失效的概率就越大;非平稳车载作用下的桥梁可靠指标小于平稳车载,桥梁需要维修补强的时间比平稳车载提前; (3)多梁式简支梁桥在建造时应该提高边梁的安全储备,在管养时可以采取限载措施进行干预。 相似文献
57.
邱宇 《原子与分子物理学报》2024,41(2):021008-66
通过绝热动力学方法,研究了共轭高聚物双分子结构中激子对外加电场的响应.当外电场强度超过某个临界值时,激子会被解离成一对自由的电子与空穴.对于双分子结构中的激子,其临界解离电场除了受电子与电子相互作用以及电声相互作用影响之外,还受分子间相互作用的影响.由动力学演化的计算得到,激子临界解离电场强度随分子间相互作用强度的增大而呈非线性降低;随电子与电子相互作用强度的增大呈非线性减小的变化;但是,随电声耦合强度的增大却呈现出线性增大的变化. 相似文献
58.
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60.
应用圆二色光谱研究电场对超氧化物歧化酶二级结构的影响 总被引:2,自引:0,他引:2
超氧化物歧化酶经不同强度的电场作用,采用圆二色光谱研究了不同强度的电场对超氧化物歧化酶二级结构的影响.结果表明:在1.0 kV/cm~6.0 kV/cm范围, 不同强度的电场对超氧化物歧化酶的α-螺旋、β-折叠、β-转角及无规卷曲相对含量的影响程度不同.与对照组相比,处理组的β-折叠和β-转角含量降低,降幅范围分别为2.5%~15.1和0.9%~3.5%;α-螺旋和无规卷曲含量增加,增幅范围分别为3.1%~18.8%和1.0%~8.9%.电场作用具有使超氧化物歧化酶的二级结构中β-折叠、β-转角向α-螺旋及无规卷曲转化的趋势. 相似文献