Comparative study of electrochemical capacitance of multi-walled carbon nanotubes before and after chopping

In the work, short multi-walled carbon nanotubes (S-CNTs) were synthesized by chopping conventional μm-long multi-walled carbon nanotubes (L-CNTs) under ultrasonication in H₂SO₄/HNO₃ mixed acids. A comparative electrochemical investigation performed in 6 M KOH solution demonstrated that a specific capacitance (SC) of ca. 14.6 μF cm⁻² was delivered by the S-CNTs with the specific surface area (SSA) of 207 m² g⁻¹, much larger than that of ca. 10.1 μF cm⁻² for the L-CNTs with the SSA of 223 m² g⁻¹, the reason for which was that S-CNTs with two open ends, due to good ion penetrability, provided more entrances for electrolyte ions to access the inner surface easily through their shorter inner pathway so as to enhance their SSA utilization and geometric SC. The surface structure disruption of S-CNTs, owing to ultrasonication and oxidation during chopping process, deteriorated their electronic conductivity and resulted in an inferior power property in contrast to L-CNTs.     

An investigation of structural phase transformation and electrical resistivity in Ta films

In this work, we report the effect of substrate, film thickness and sputter pressure on the phase transformation and electrical resistivity in tantalum (Ta) films. The films were grown on Si(1 0 0) substrates with native oxides in place and glass substrates by varying the film thickness (t) and pressure of the working gas (p_Ar). X-ray diffraction (XRD) analysis showed that the formation of α and β phases in Ta films strongly depend on the choice of substrate, film thickness t and sputter pressure p_Ar. A stable α-phase was observed on Si(1 0 0) substrates for t ≤ 200 nm. Both α and β phases were found to grow on glass substrates at all thicknesses except t = 100 nm. All the films grown on Si(1 0 0) substrates for p_Ar ≤ 6.5 mTorr had α-phase with strong (1 1 0) texture normal to the film plane. The glass substrates promoted the formation of β-phase in all p_Ar except p_Ar = 5.5 mTorr. The resistivity ρ was observed to decrease with t, whereas ρ was increased with p_Ar on Si(1 0 0) substrates. In all films, the measured resistivity ρ was greater than the bulk resistivity. The resistivity ρ was influenced by the effects of surface roughness and grain size.     

电场作用下紫膜中细菌视紫红质的圆二色性研究

垂直于测量光束的外电场对紫膜水悬浮液中的细菌视紫红质的圆二色性有很大影响。５０Ｈｚ正弦交流电场作用下产生５６８ｎｍ的正的差圆二色性峰，反向电脉冲串作用下产生５５６ｎｍ左右的负的差圆二色性峰，两峰峰位均未显示有随电压的变化而移动；但是，强度随外加电压的半加而增强；撤去电场后该两峰均即该消失。分析认为，电场下细菌视紫红质中存在柔性结构变化，这种结构变化也可用于存储信息。     

Theoretical study of14N pure quadrupole resonance in amino acids

The theoretical hybridization model of Vega is adapted to the tetrahedral environment around the nitrogen nucleus in eleven amino acids to estimate the orbital occupation numbers using the experimental values of the quadrupole coupling constant and asymmetry parameter of¹⁴N quadrupole resonance and the results are discussed.     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

电场对量子阱中激子能级宽度的影响

本文把固体中较大窨范围运动的粒子作为准经典粒子来描述。将已导出的能量测不准公式和激子的经典力学模型应用到电场下GaAs/GaAlAs量子阱中,激子能级宽度的计算结果与测量结果基本吻合,能较清楚、简单地解释纵向电场和横向电场下激子光吸收线宽的很大的差异。     

Superconductivity in Sr<Subscript>0.75</Subscript>Y<Subscript>0.75</Subscript>Ba<Subscript>1.5</Subscript>Cu<Subscript>3</Subscript> O<Subscript>7−<Emphasis Type="Italic">d</Emphasis></Subscript> compounds

The effect of simultaneous Sr substitution at the Ba and Y sites has been studied in the Sr_0.75Y_0.75Ba_1.5Cu₃O_7–dsystem. Attempts to replace 25% Y and 25% Ba have been successful and superconductivity was observed above 78 K for Sr_0.75Y_0.75Ba_1.5Cu₃O_7–d compound with high oxygen content, i.e., O_6.76, and having orthorhombic crystal symmetry. The compound was treated in argon gas at 800°C to reduce the oxygen content and to induce some structural changes. The Sr_0.75Y_0.75Ba_1.5Cu₃O_6.1 compound thus obtained has tetragonal symmetry and low oxygen content, O_6.1. It has also shown superconductivity at 28 K. The paper presents a careful comparison of the structural and electrical properties and infrared absorbance spectra of the two compounds with the same metallic composition, Sr_0.75Y_0.75Ba_1.5Cu₃, but with different oxygen content and crystal symmetry. The study clearly establishes the occurrence of superconductivity in tetragonal Sr-substituted (both at Y and Ba sites in) YBCO.     

Triboelectrification of granular insulating materials as affected by dielectric barrier discharge (DBD) treatment

The aim of this paper is to point out the influence of dielectric barrier discharge treatment on tribocharging of granular insulating materials. Particles of Polyvinyl Chloride (PVC) and Polypropylene (PP) were subjected to an AC dielectric barrier discharge (DBD) plasma treatment in ambient airprior to tribocharging in a vibratory device. The charge to mass ratio was measured for treated and untreated materials. Electrostatic separation of a mixture of granular materials (PVC and PP) to measure the effectiveness of DBD treatment was evaluated by processing treated and untreated PVC/PP granular mixtures in a free-fall electrostatic separator. The obtained results clearly indicate that DBD has the capability to influence surface charging proprieties of polymer granular materials. In case of short treatment time, typically less than 3 s, a marked increase in the charge to mass ratios was observed for both PVC (about 35%) and PP (roughly 45%). In the same way, the quantity of DBD-treated materials, recovered after electrostatic separation, was increased by about 104% and 30% for PVC and PP, respectively, as compared to untreated case. The DBD treatment time is a key factor to increase the tribo electric effect.     

Modeling of the EHD effects on hydrodynamics and heat transfer within a flat miniature heat pipe including axial capillary grooves

A numerical model for an electrohydrodynamic (EHD) grooved Flat Miniature Heat Pipe (FMHP) is developed. Two microchannel shapes are considered as axial capillary structures: square and triangle grooves. For both groove shapes, the electric field affects the liquid-vapor radius of curvature which decreases in the condenser and increases in the evaporator under the action of the electric field. The liquid and vapor velocities are also affected by the EHD effects. The electric field effects on the velocities depend on the FMHP zone. It is also demonstrated that the electric field increases the vapor pressure drop; however, it decreases the liquid pressure drop. The liquid-wall and vapor-wall viscous forces as well as the shear liquid-vapor forces are affected by the electric field. The analysis of the electric forces shows that the dielectrophoretic forces which act on the liquid-vapor interface are predominant and their order of magnitude is much higher than the Coulomb forces. Finally, it is also demonstrated that the capillary limit increases with the electric field for both groove shapes.     

Pressure induced metallization of the antiferromagnetic-insulator CoI

Abstract

High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI, using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure ¹²⁹I Mgssbauer Spectroscopy (MS)¹ has been verified. At about 8 GPa the system becomes metal1ic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.