Structural and elastic properties of the filled tetrahedral semiconductors LiZnX (X=N, P, and As)

We report on first-principles study of the structural and elastic properties of the Nowotny-Juza filled tetrahedral compounds LiZnX (X=N, P, As) using the full-potential linearized augmented plane wave method within the local density approximations. Our results indicate that the energetically favourable α-LiZnX materials are slightly softer than their binary analogous GaX and the sound speeds are quantitatively similar for LiZnAs and GaAs.     

Transport coefficients and defect structure of Sb2−xAgxTe3 single crystals

Incorporation of Ag in the crystal lattice of Sb₂Te₃ creates structural defects that have a strong influence on the transport properties. Single crystals of Sb_2−xAg_xTe₃ (x=0.0; 0.014; 0.018 and 0.022) were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. With an increasing content of Ag the electrical resistance, the Hall coefficient and the Seebeck coefficient all decrease. This implies that the incorporation of Ag atoms in the Sb₂Te₃ crystal structure results in an increasing concentration of holes. However, the doping efficiency of Ag appears to be only about 50% of the expected value. We explain this discrepancy by a model based on the interaction of Ag impurity with the native defects in the Sb_2−xAg_xTe₃ crystal lattice. Defects have a particularly strong influence on the thermal conductivity. We analyze the temperature dependence of the lattice thermal conductivity in the context of the Debye model. Of the various phonon scattering contributions, the dominant influence of Ag incorporation in the crystal lattice of Sb₂Te₃ is revealed to be point-defect scattering where both the mass defect and elastic strain play a pivotal role.     

Spectroscopic and magnetic properties of Fe3Fe4(AsO4)6

The infrared (IR) and ⁵⁷Fe-Mössbauer spectra of Fe₃^IIFe₄^III(AsO₄)₆ were recorded and analyzed on the basis of its structural characteristics. The IR spectrum presents a high complexity, showing an important number of bands and splittings, as a consequence of the presence of three structurally independent AsO₄³⁻ groups. The analysis of the four quadrupole signals shown by the Mössbauer spectrum allowed to attain a detailed insight into the cation distribution over the available crystallographic sites. The alternating current susceptibility measurements indicate a paramagnetic to ferrimagnetic transition in the material at about 59 K.     

Modification of dielectric relaxations in sodium bismuth titanate with samarium doping

Na_0.5Bi_(0.5−x) Sm_xTiO₃ (NBST) ceramics with x=0.05, 0.1, and 0.15 are prepared through chemical route. The X-ray diffraction studies confirmed the formation of single phase. Dielectric measurements in the temperature region ranging from room temperature (∼30 °C) to 600 °C at different frequencies (10 kHz-1 MHz) showed anomalies at 130, 306, and 474 °C (at 10 kHz frequency) for x=0.05 sample. Other samples showed only two peaks. To establish the electrical nature of these relaxations, impedance measurements are done at different temperatures and frequencies. The relaxation time, obtained from both impedance and modulus data, is found to decrease with increase in temperature. The relaxations observed are of non-Debye type. Increase in samarium content increases the activation energy for relaxation.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

Mossbauer, infrared and magnetic susceptibility studies of iron sodium borate glasses doped by sulphur

The affect of sulphur on the structural properties of iron sodium diborate glasses having the composition {(100−x)Na₂B₄O₇+xFe₂O₃}+yS, where x=0.05, 0.15 and 0.25 mol% and Y=0, 2.5 and 5 wt% was studied by infrared, Mossbauer spectroscopy and magnetic susceptibility measurements. It was found that, for samples having 5 mol% Fe₂O₃ and free from sulphur, the iron ions are present in both Fe²⁺ and Fe³⁺ states and also 92% of the total iron enters the glass network as a glass former. The ratio of Fe³⁺/Fe²⁺ increases with increasing the iron content for sulphur-free samples and others containing sulphur. This ratio also decreases with increasing the sulphur content. The magnetic susceptibility was found to decrease with increasing the sulphur content. Also, the increase of Fe₂O₃ content led to a less symmetrical environment of Fe³⁺ ions and vice versa for the Fe²⁺ environment.     

(CdSe)n(n=1,2)团簇性质及CdSe分子热力学性质的理论计算

用密度泛函B3LYP方法、有效核势(ECP)基组LanL2DZ对(CaSe)n(n=1,2)团簇进行了理论研究,得到(CaSe)n(n=1,2)分子体系可能存在的状态及各电子状态的平衡几何Re、谐振频率、偶极矩和离解能De、不同温度、压力下的热力学函数值;设用总能量中的电子和振动能量近似代表CdSe分子处于固态时的能量,用总熵中的电子和振动熵近似代表CdSe分子处于固态时的熵,进而计算了Cd与Se反应的△Hθ、△Sθ、△G,并由此计算出不同温度的反应平衡常数Kp结果表明:在298～1400K温度范围内,Cd与Se反应的自由能值均为负,且随着温度的升高,△Gθ值负的越多,表明在这个温度范围内反应能自发发生,而且自发趋势随温度的升高逐渐增大;平衡常数逐渐减小,即反应进行程度随温度的升高逐渐减小;CdSe分子材料的导电性随压力增大而增强.     

Al，Mg掺杂GaN电子结构及光学性质的第一性原理研究

基于密度泛函理论,采用广义梯度近似方法,计算了Al,Mg掺杂的闪锌矿型GaN的电子结构和光学性质,分析了其电子态分布与结构的关系,给出了掺杂前后GaN体系的介电函数和复折射率函数.计算结果表明掺有Mg的GaN晶体空穴浓度增大,会明显提高材料的电导率,而Al掺杂GaN晶体的载流子浓度不变,只是光学带隙变宽;通过分析掺杂前后GaN晶体的介电函数和复折射率函数,解释了体系的发光机理,为GaN材料光电性能的进一步开发与应用提供了理论依据.通过比较可知,所得出的计算结果与现有文献符合得很好. 关键词： GaN晶体 电子结构 光学性质 掺杂     

S掺杂对锐钛矿相TiO2电子结构与光催化性能的影响

采用基于第一性原理的平面波超软赝势方法研究了掺杂不同价态S的锐钛矿相TiO₂的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明硫在掺杂体系中的存在形态与实验中的制备条件有关;掺杂后晶格发生畸变、原子间的键长及原子的电荷量也发生了变化,导致晶体中的八面体偶极矩增大; S 3p态与O 2p态、Ti 3d态杂化而使导带位置下移、价带位置上移及价带宽化,从而导致TiO₂的禁带宽度变窄、光吸收曲线红移到可见光区.这些结果很好地解释了S掺杂锐钛矿相TiO₂在可见光下具有优良的光催化性能的内在原因.根据计算结果分析比较了硫以不同离子价态掺杂对锐钛矿相TiO₂电子结构和光催化性能影响的差别. 关键词： 2')" href="#">锐钛矿相TiO₂ S掺杂 第一性原理 光催化性能     

Gauge invariance,charge conservation,and variational principles

We present new results on the correspondence between symmetries, conservation laws and variational principles for field equations in general non-abelian gauge theories. Our main result states that second order field equations possessing translational and gauge symmetries and the corresponding conservation laws are always derivable from a variational principle. We also show by the way of examples that the above result fails in general for third order field equations.