Coevolutionary,coexisting learning and teaching agents model for prisoner’s dilemma games enhancing cooperation with assortative heterogeneous networks

Unlike other natural network systems, assortativity can be observed in most human social networks, although it has been reported that a social dilemma situation represented by the prisoner’s dilemma favors dissortativity to enhance cooperation. We established a new coevolutionary model for both agents’ strategy and network topology, where teaching and learning agents coexist. Remarkably, this model enables agents’ enhancing cooperation more than a learners-only model on a time-frozen scale-free network and produces an underlying assortative network with a fair degree of power-law distribution. The model may imply how and why assortative networks are adaptive in human society.     

Asymptotic Reissner–Nordström black holes

We consider two types of Born–Infeld like nonlinear electromagnetic fields and obtain their interesting black hole solutions. The asymptotic behavior of these solutions is the same as that of a Reissner–Nordström black hole. We investigate the geometric properties of the solutions and find that depending on the value of the nonlinearity parameter, the singularity covered with various horizons.     

Spin-polarised DFT study of cobalt-doped gallium clusters

The structural, electronic and magnetic properties of small gallium clusters doped with Cobalt have been studied using spin-polarised density functional theory. The binding energy per atom, second-order differences of total energies and fragmentation energies of equilibrium geometries of the host Ga_n+1 and doped Ga_nCo (n = 1–12) clusters are computed. Doped clusters are found to be more stable than pure Ga clusters; Ga₃Co, Ga₅Co and Ga₈Co clusters are exceptionally stable. Doping with Co changes the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO–LUMO) gap, and also affects the magnetic moments of clusters.     

Variation of the electronic properties of zigzag boron nitride nanotubes by Al-doping: a DFT study

Boron nitride nanotubes (BNNTs) are semiconductors with a wide band gap. In comparison with carbon nanotubes (CNTs), BNNTs have higher chemical stability, excellent mechanical properties and higher thermal conductivity. In this paper, we study the effect of diameters and substituting B and N atoms of various zigzag BNNTs with Al, on structural and electronic properties of BNNTs in solid state using the density functional theory method. The results of calculations of density of states and band structure (band) showed that the band gap between the valence and conduction level increases as a result of the enhancement of tube diameter of BNNTs. Finally, the results showed that the electronic properties of the pristine BNNTs can be improved by doping Al atom in the zigzag configuration of tubes.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.     

The influence of implanted xenon on the sputtering yield of silicon

Following implantation labeling with either 200 or 270 keV Xe⁺ the sputtering yield of silicon bombarded with 20 keV Xe⁺ has been determined in situ by means of the backscattering technique (Y = 3.0 ± 0.3 (atoms/ion)). Yield enhancement by up to 60% was observed in cases where the implantation-induced xenon concentrations exceeded the saturation concentration during sputtering. The effect is attributed to (i) an increase in energy deposition at the surface introduced by pronounced xenon loading of the target and (ii) lowering of the surface binding energy. As a consequence the energy dependence of the xenon sputtering yield of silicon is expected to be strongly affected by the energy dependence of the xenon saturation concentration in silicon. Available experimental data support this idea.     

Interatomic potentials in transition metals

The different roles played by the valence s and d electrons in determining the bulk properties of pure transition metals is described. In the light of this the expected behaviour of the inert gas-metal and metal-metal interatomic potentials is discussed.     

4He-stopping power measurements by using ion implantation and backscattering techniques

Experimental results on changes in conductivity of N₂+ and Ar⁺ bombarded thin copper, aluminium and bismuth films are given along with the preliminary observations on photoconductivity of N₂+ bombarded Bi₂O₃ thin films. The performance of a low cost, medium resolution 200 keV ion implantation system, used in the above experiments is also discussed.     

Self-interstitial solute interaction in aluminium base alloys: Problems of data interpretation

The interpretation of electrical resistivity measurement results of Al base alloys is critically discussed. Correct numerical data evaluation with respect to the atomistic properties r_c/r_p, r_t and Pf^t/Pf is yet impossible for Al and its alloys because of the overlapping of Ic and Id recovery for those electron irradiations for which damage rate measurements exist and because of the unexplained scatter of initial damage rate data.     

周期性纳米洞内边缘氧饱和石墨烯纳米带的电子特性

利用基于密度泛函理论的第一性原理方法,研究了内边缘氧饱和的周期性凿洞石墨烯纳米带（G NR）的电子特性. 研究结果表明：对于凿洞锯齿形石墨烯纳米带（ZGNRs）,在非磁性态时不仅始终为金属,且金属性明显增强;反铁磁态（AFM）时为半导体的ZGNR,凿洞后可能成为金属;但铁磁态（FM）为金属的ZGNR,凿洞后一般变为半导体或半金属. 而对于凿洞的扶手椅形石墨烯（AGNRs）,其带隙会明显增加. 深入分析发现：这是由于氧原子对石墨烯纳米带边的电子特性有重要的影响,以及颈次级纳米带（NSNR）及边缘次级纳米带（ESNR）的不同宽度及边缘形状（锯齿或扶手椅形）能呈现出不同的量子限域效应. 这些研究对于发展纳米电子器件有重要的意义. 关键词： 石墨烯纳米带 纳米洞 内边缘氧饱和 电子特性