用伏安法测绘二极管伏安特性的研究

本提出用伏安法测绘二极管伏安特性曲线的一种电路新接法,用该接法测量时,不需修正即可完全消除电表内阻的影响。     

TDLAS氧气测量系统中激光器调谐性能测试与优化

TDLAS(可调谐半导体激光吸收光谱)技术以其分子光谱高选择性、速度快、灵敏度高、非接触测量等难以取代的优势,成为燃烧过程诊断等应用的首选,可以有效用于氧气测量。DFB(分布反馈)半导体激光器以其体积小、功耗低、寿命长、线宽窄、波长可调谐等优点成为TDLAS系统的主要选择,而其调谐特性是制约系统测量性能的关键因素。根据TDLAS氧气测量系统工作要求,采用一种简单易行的实验方法对系统中用到的764 nm DFB激光器的电流波长、温度波长和电流功率等重要调谐特性进行了测试和分析,发现出射光谱窄线宽、高边模抑制比和宽波长可调谐范围等特点明显,电流波长调谐曲线近似但并非严格线性、调谐速率约0.023 nm·mA-1,温度越高阈值电流越大、PI曲线也并非严格线性,温度调谐特性曲线线性较好、波长温度调谐速率基本保持恒定约为0.056 nm·℃-1。可见各种调谐曲线的非线性失真比较明显,影响氧气测量精度。温度调谐非线性可以通过温控精度的提高来消除,电流功率调谐非线性可以通过设置参考光强来消除。为了进一步解决电流波长调谐非线性问题,根据DFB半导体激光器的调谐机理和电流波长测试结果的多项式拟合,考虑通过DA控制注入电流的方式对电流波长调谐非线性进行补偿。这种方法针对不同激光器只需在系统初次工作之前进行一次多项式拟合,方案合理、实现简单且不影响测量过程。实验证明,补偿之后的λI曲线线性拟合残差小于1 pm,远小于补偿前的22 pm,效果明显,为氧气各种参数TDLAS精确测量和反演提供了依据。     

高温硬焊料准连续半导体激光器巴条叠阵的性能研究

以巴条叠阵结构及封装方法为基础,研制了一组高温硬焊料准连续半导体激光器巴条叠阵,并研究了其相关的光电性能和寿命特征。结果表明,所研制的器件在200 A的工作电流下,重复频率250 Hz、脉宽200 μs时,单巴峰值功率>200 W,50%光谱宽度<3 nm,电光转换效率>50%,寿命达到4.71×10⁹ shots时的功率衰减<15%;当工作电流为150 A时,预期寿命高达1.5×10¹⁰ shots。     

激光二极管抽运氦气冷却钕玻璃叠片激光放大器热致波前畸变和应力双折射的数值模拟和实验研究

热效应仍是限制激光放大器向高功率、高光束质量进一步发展的瓶颈问题, 高效的热管理是抑制热效应的重要技术途径. 研究了基于激光二极管抽运氦气冷却的钕玻璃叠片激光放大器的热效应. 利用有限元数值模拟的方法, 分析了钕玻璃的温度、应力应变和应力双折射分布, 并计算了热致波前畸变和退偏损耗, 与实验结果符合得较好, 在热沉积为0.7 W/cm³的条件下, 6片钕玻璃总的热致波前畸变为6.77λ , 最大退偏量大于90%.     

Bit-rate Flexible Picosecond Pulse Width Conversion with All-optical Mono-stable Multivibrator Laser Diode

An optical mono-stable multivibrator laser diode (MM-LD) is realized by using a multi-electrode distributed feedback laser diode. All-optical pulse-width conversion of ultra-short pulses to non-return-to-zero (NRZ) is achieved using an MM-LD. The MM-LD is adopted for a wide range of bit-rates between 2-10 Gbit/s by tuning the DC bias. Data format transformation from 10-Gbit/s return-to-zero optical signals to NRZ optical-signals is achieved with error free operation. Converted optical signals, which have a narrower spectral bandwidth and lower peak power than when input, are transmitted using a 1.3-μm zero dispersion fiber (1.3Aλ₀-SMF).     

Application of stain-etched porous silicon in light emitting diodes and solar cells

Porous silicon/c-Si heterostructures have been formed by the method of stain etching.The properties of light emitting diodes (LED) and solar cells have been studied. The transport mechanism of the diode has been investigated from the current–voltage characteristics measured at different temperatures (296–380 K). A model based on multi-step tunneling of carriers at reverse and low forward bias (<1 V) and on field tunneling across a narrow barrier at higher forward bias (>1.5 V) is proposed for the LED. In the case of the solar cells the porous silicon is formed in between the fingers of the front grid contact. Application of porous silicon in solar cells results in an increase of the short-circuit current and efficiency of the cells by about 30%.     

激光二极管泵浦的Nd：YVO4单频绿光激光器

对激光二极管泵浦单频连续运行的Ｎｄ：ＹＶＯ４腔内倍频激光器进行了理论和实验研究，通过精密调控Ｎｄ：ＹＶＯ４，ＫＴＰ及泵浦泵温度以达到有关参数的最佳匹配，从而获得了较稳定的单横模，单纵模，单偏振的绿光输出，实测最大单频录光功率为７．５ｍＷ，此时会聚磁浦光功率约为４３０ｍＷ，已超过阈值泵浦功率１３倍以上。     

Active Micromachined Integrated Terahertz Circuits

Schottky barrier diodes have been integrated into on-chip rectangular waveguides. Two novel techniques have been developed to fabricate diodes with posts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post heights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices have been fabricated and D.C. characterized.     

Fringe Locking in a Laser Diode Interferometer by Optical Feedback During Modulation of Injection Current

A fringe locking phenomenon in a two beam interferometer using a semiconductor laser subject to optical feedback was, whose injection current is modulated. When a path difference of the interferometer is sufficient, fringes taken by a charge coupled device camera are seen to be stationary and the rms fluctuations of fringe phase is reduced to as low as 0.2ϖ radians from more than 8ϖ radians without the optical feedback. The rms phase fluctuation is independent of frequency and amplitude of the current modulation. The fringe locking has also been observed in the presence of both injection current modulation and piezoelectric transducer mirror vibration.