GaN发光二极管表观电容极值分析

利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。     

双脉冲电子束源实验研究

利用现有2MeV直线感应注入器,通过改造,将其次级功率源和8个感应腔分成2组,使之交替工作,建立了一台双脉冲电子束源。二极管电压脉冲幅度达到1MeV,电子束脉冲持续时间为120ns,脉冲间隔可以根据需要在100~500ns间进行调节。实验结果表明：该双脉冲电子束源可以产生双脉冲电子束,其电压幅度差值小于2%,束流可达3kA,并且工作稳定,利用该装置可以进行多脉冲二极管物理和天鹅绒多脉冲发射特性实验研究。     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms

Thermal resistance and thermal rise-time are two basic parameters that affect most of the performances of a laser diode greatly. By measuring waveforms received after a spectroscope at wavelengths varied step-by-step, the spectrally resolved waveforms can be converted to calculate the thermal rise-time. Basic formulas for the spectrum variation of a laser diode and the measurement set-up by using a Boxcar are described in the paper. As an example, the thermal rise-time of a p-side up packaged short-pulse laser diode was measured by the method to be 390 μs. The method will be useful in characterizing diode lasers and LD modules in high-power applications.     

用于氢原子1S-2S光谱研究的超窄线宽243nm半导体激光

近年来,随着激光稳频技术的发展,人们可以把972nm的外腔半导体激光器产生的激光进行放大和四倍频,并将它锁定到超稳定的光学法布里-珀罗腔上,从而可以获得Hz量级超窄线宽的243nm激光,使其成为研究氢原子1S-2S双光子跃迁的有力工具.文章主要介绍了超稳腔、四倍频243nm半导体激光器的研究进展及在氢原子1S-2S双光子跃迁精密光谱研究中的应用.     

半导体激光泵浦亚稳态氩气激光器实现激光振荡

采用基于体布拉格光栅的窄线宽半导体激光器作为泵浦源,以电容耦合式射频激励Ar, He混合气体放电等离子体为增益介质,在双程纵向泵浦的结构下实现了连续波模式的912 nm的激光输出。     

高压多脉冲硅堆汇流结构

利用形成线并联的方法产生高压三脉冲,需要在形成线和加速腔负载间串联硅堆隔离网络,以隔离不同形成线间的相互影响,并将不同形成线先后产生的高压脉冲汇流成三脉冲串传输到加速腔。硅堆放置于封闭的油箱中,箱体结构的设计将直接影响汇流后三脉冲的波形品质和硅堆的使用寿命。通过对高压硅堆内部电势分布的模拟分析和实验验证,明确了影响硅堆使用寿命的主要原因;设计实验测量了汇流结构各部分对汇流脉冲前沿的影响程度,综合分析汇流结构对硅堆使用寿命的影响,明确了汇流结构的优化方向,并在此基础上确定了神龙二号三脉冲直线感应加速器硅堆汇流结构的最终设计。     

漫反射立方腔单次反射平均光程的理论和实验研究

根据Beer-Lambert定律可知,增加气体池的有效光程是提高气体监测灵敏度最直接而有效的途径.通过实验研究和分析,漫反射立方腔作为气体池能显著地增加有效光程,因此研究其内部的光线传播规律具有重要意义.基于对漫反射立方腔内光线传播规律的理论分析,得到了单次反射平均光程的理论值,建立了漫反射立方腔内光线传播的理论近似模型,并通过有限元法仿真获得了单次反射平均光程的模拟值.利用可调谐二极管激光吸收光谱技术得到了立方腔的有效光程,间接求得了单次反射平均光程的实验值.对理论值、模拟值和实验值进行比较分析,验证了理论近似模型和有限元法仿真的准确性和稳定性.     

Parallel Plate Interferometer with a Reflecting Mirror for Measuring Angular Displacement

A parallel plate interferometer with a reflecting mirror for measuring angular displacement is proposed. A deflection angle of a beam caused by an angular displacement is amplified by use of a reflecting mirror to increase the optical path difference (OPD) in the plane-parallel plate, which provides high sensitivity of the phase measurement. Detection of light transmitted through the plane-parallel plate with a position sensitive detector (PSD) enables high accurate measurement of the initial angle of incidence to the plane-parallel plate with insensitivity to stray light. The improved parallel plate interferometer achieves a measurement repeatability of 10⁻⁸ rad.     

利用Ag@SiO_2纳米粒子等离子体共振增强发光二极管辐射功率的数值研究

金属纳米粒子利用其局域表面等离子体共振效应(LSPR),可以增强附近荧光分子的自发辐射速率,因而在光学传感、光电器件等领域中具有潜在的应用价值.金属纳米粒子的LSPR与其自身的材料、形状、尺寸以及周围环境介质密切相关,这影响着纳米粒子在具体器件中的应用.本文利用三维时域有限差分法,研究了相同体积的球形、椭球形、立方形与三棱柱形银纳米粒子对薄膜发光二极管辐射功率的影响;计算了不同形状银纳米粒子对偶极子光源辐射功率和薄膜器件光出射强度的增强,并结合LSPR效应讨论了辐射功率变化的物理机理.研究结果表明:银纳米粒子自身形状尖锐程度的增加有利于提高LSPR的共振强度;同时纳米粒子的形状影响了LSPR共振电场与薄膜器件中偶极子辐射电场之间的耦合作用,其中立方形纳米粒子因为能实现最强的耦合作用而对器件的辐射功率增强最大.在此基础上进一步讨论了不同薄膜材料对LSPR共振及光源辐射功率的影响,发现较高的材料折射率有利于增强金属纳米粒子的LSPR与器件的耦合作用,从而改善发光二极管性能.