电子回旋共振氩等离子体中亚稳态粒子数密度及电子温度的测量

测量了电子回旋共振（ECR）氩等离子体中Ar的1s₅亚稳态粒子数密度，在气压 为02—0 8 Pa、功率为500—700W的范围内，利用吸收光谱法测量了Ar原子8115 nm谱线的吸收强 度，得到1s₅亚稳态粒子数密度为1×10¹⁵—4×10¹⁵ m ^-3.本文综合考 虑基态和1s₅亚稳态粒子的激发对Ar发射谱线强度的贡献后，用两条发射谱线强 度之比得 到电子温度.结果表明，计入了1s₅亚稳态激发的贡献后，所得到的电子温度与 只考虑基态的贡献得到的电子温度相比存在较大的差别. 关键词： 光谱法 亚稳态粒子数密度 电子温度 ECR等离子体源     

轴对称磁场的束流光学及其在ECR离子源中的应用

 带电粒子在轴对称磁场中一边沿着对称轴向前运动,一边绕对称轴旋转。所以横向运动可以分解为两部分：聚焦运动和子午面的旋转。因此,4维横向传输矩阵可以表示为聚焦矩阵和旋转矩阵的乘积。用旋转矩阵和聚焦矩阵重新推导了总的传输矩阵。然后给出了相应的相椭圆系数矩阵来进一步估算从ECR离子源引出束流的发射度.详细地讨论了束流分布函数的二次矩。     

ECR等离子体源中基本参数的数值模拟

采用混合模型求了ＥＣＲ等离子体的各种物理参量着重了中性气压、微波功率对等离子体参数以及离子能量和方向角分布的影响，并讨论了与之相关的均匀性、方向性等物理问题。     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds

Electron Cyclotron Resonance (ECR) discharges of CCl₂F₂ or PCl₃ have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min^–1 for 50 W (DC bias 308 V), 10 mTorr, 38 CCl₂F₂/2 O₂ plasmas. The etch rates fall rapidly with increasing pressure or increasing O₂-to-CCl₂F₂ ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl₃ discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min^–1 are possible with PCl₃ although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl₂F₂-based mixtures.     

High-pressure vapor–liquid equilibria of systems containing ethylene glycol,water and methane: Experimental measurements and modeling

This work presents new experimental phase equilibrium measurements of the binary MEG–methane and the ternary MEG–water–methane system at low temperatures and high pressures which are of interest to applications related to natural gas processing. Emphasis is given to MEG and water solubility measurements in the gas phase. The CPA and SRK EoS, the latter using either conventional or EoS/G^E mixing rules are used to predict the solubility of the heavy components in the gas phase. It is concluded that CPA and SRK using the Huron–Vidal mixing rule perform equally satisfactory, while CPA requires fewer interaction parameters.     

MW-ECR PE-UMS等离子体特性及对Zr-N薄膜结构性能的影响

采用静电探针技术对微波电子回旋共振(MW-ECR) 等离子体进行了诊断,利用等离子体增强 非平衡磁控溅射(PE-UMS)法在常温下制备了Zr-N薄膜, 通过EPMA，XRD，显微硬度对膜的 结构和性能进行评价.实验结果表明，随氮气流量增加，总的等离子体密度从807×10⁹c m^-3增加到831×10⁹cm^-3然后逐渐减小为752×10 ⁹cm^-3；而N₂⁺密度则从312×10^{8< /sup>cm-3线性递增到335×109cm-3；电子温度变化 不大.对薄膜而言，随N₂+密度增大，样品中氮含量增加，而晶粒逐 渐变小，当样品中N/ Zr原子比达到14时，薄膜中出现亚稳态的Zr₃N₄相以及非晶相， 在更高氮流量下，整 个薄膜转变为非晶态.与此相应，薄膜硬度由最初的225GPa增大到2678GPa 然后逐渐减 小到1982GPa. 关键词： 氮化锆薄膜 ECR等离子体 磁控溅射 诊断}     

ATOMKI-ECRIS由离子源向等离子体装置的改造

In order to extend the capabilities of the ATOMKI-ECRIS it is being transformed into a modified plasma device by changing its three main components with new ones.The cylindrical plasma chamber is replaced by a larger one(ID=10cm,L=40cm).A new NdFeB multi-pole radial trap was designed and purchased.The basic configuration is 6-pole,but 8-or 12-pole arrangements can also be formed later.The Dresent microwave source(2000W,14.5GHz)and two additional low-power,wide frequency TWT amplifiers give many opportunities to form plasmas with different sizes and characters. Actually a new facility with two sharply different operation modes is being established.All the modifications are reversible so the transformation of the ECRIS into this new device or back can be easily done.     

A new fabrication technique for photonic crystals: Nanolithography combined with alternating-layer deposition

We propose two photonic crystal structures that can be created by combining nanolithography with alternating-layer deposition. Photonic band calculations suggest that a drilled alternating-layer photonic crystal combining two-dimensional (2D) alternating multilayers and an array of vertically drilled holes may achieve a full photonic bandgap. In addition, a 3D/2D/3D cross-dimensional photonic crystal, which sandwiches a 2D photonic crystal slab between three-dimensional (3D) alternating-layer photonic crystals, should provide better vertical confinement of light than a conventional index guiding slab. Fabrication techniques based on existing technologies (electron beam lithography, bias sputtering, and low-pressure ECR etching) require very few process steps. Our preliminary fabrication suggests that, by refining these technologies, we will be able to realize photonic crystals.     

HL—1装置逃逸电子扰动及硬X射线发射

HL-1装置逃逸电子扰动,硬X射线锯齿振荡和软X射线锯齿振荡关联,内破裂后硬X射线发射强度到其峰值的延迟时间,被解释为逃逸电子从q=1面附近输运到等离子体边缘时间。当有电子回旋共振预电离时,硬X射线显著减少;相反,电子回旋共振加热时,硬X射线明显地增加。     

强流高电荷态Pb离子束的产生与优化研究

随着原子物理及表面物理研究的发展,电荷态金属离子束的需求日益增多. 近来,中国科学院近代物理研究所,14.5GHz LECR3,离子源实验平台上, 以炉子法产生的铅离子束作为研究对象, 进行了一系列,ECR,离子源关键参数(如：磁场、炉子功率、掺气等)影响高电荷态铅离子束产额的实验研究, 在此基础上, 调整优化了,LECR3,离子源的状态参数, 从而获得了强流高电荷态铅离子束,18eμa ²⁰⁷Pb³⁰⁺,和6.7eμa ²⁰⁷Pb³⁷⁺.