All-Optical Logic Device Using Bent Nonlinear Tapered Y-Junction Waveguide Structure

We propose an all-optical logic device made of a bent tapered Y-junction waveguide with a Kerr-type nonlinear interface. It could provide an AND gate, OR gate, and exclusive-OR (XOR) gate. We could obtain different transmission results by adjusting the bending angle. The numerical simulation results show that the device functions as AND, OR, and XOR gates.     

连续100W量子阱二极管激光器封装工艺

为了提高激光器输出功率,对研制的铜微通道冷却器性能进行了测试,分析了其散热能力。设计了一种在软焊料中掺杂金属添加剂的工艺,有效抑制了晶须生长,并利用该冷却器和新工艺封装出了连续100W大功率二极管激光器,并对封装的器件进行了性能测试。测试结果表明,封装的连续100W器件在工作电流105 A时,输出功率超过了100W,中心波长为808.5 nm,光谱半高宽为2.15 nm,器件的smile尺寸小于2μm,部分值小于0.5μm。     

Determination of Titanium in Nano-Titanium(IV) Oxide Composite Food Packaging by Microwave Digestion and Inductively Coupled Plasma Atomic Emission Spectrometry and Inductively Coupled Plasma Mass Spectrometry

Titanium was determined in nano-titanium(IV) oxide food packaging by microwave digestion with inductively coupled plasma atomic emission spectrometry (ICP-AES) and inductively coupled plasma mass spectrometry (ICP-MS). Microwave digestion was optimized using different acid combinations. Both spectrometry techniques showed good reproducibility, repeatability, and recovery. For ICP-AES, the limit of detection was 5.0 mg kg^?1, the linear dynamic range was 100–5000 µ g L^?1, the average recoveries for blank samples spiked with titanium were between 94.7% and 100.1%, and the relative standard deviations were from 2.1% to 7.1%. By ICP-MS, the limit of detection was 0.3 mg kg^?1, the linear dynamic range was 0.5–200 µ g L^?1, the recoveries were 88.4%–96.3%, and the relative standard deviations were 6.3%–7.4%. These results indicated that methods were effective for the determination of titanium in food packaging.     

基于晶体双折射效应的光学逻辑处理器

利用晶体的双折射效应，发展起一种具有紧凑结构的光学逻辑处理器，实现对两个输入图像的所有１６种逻辑操作。具有体积小，性能稳定及高包装密度等优点。也给出了实验结果。     

Mechanics of DNA packaging and ejection from elastic phage capsid

This study intends to investigate how the elasticity of a bacterial phage can affect the process of DNA packaging and ejection. For this purpose, we propose a unified continuum and statistical mechanics model by taking into account the effects of DNA bending deformation, electrostatic repulsion between DNA-DNA strands and elastic deformation of the phage capsid. Based on such a model, we derive the quantitative relations between packaging force, elasticity of capsid, DNA length remaining in the capsid, osmotic pressure and ejection time. The theoretically predicted results are found to agree very well with in vitro experimental observations in the literature.     

Very high thermal conductivity obtained by boron nitride-filled polybenzoxazine

A thermal conductivity of 32.5 W/mK is achieved for a boron nitride-filled polybenzoxazine at its maximum filler loading of 78.5% by volume (88% by weight). The extraordinarily high conductivity value results from outstanding properties of the polybenzoxazine matrix and the boron nitride filler. The bisphenol-A–methylamine-based polybenzoxazine possesses very low A-stage viscosity which aids in filler wetting and mixing. The filler particles with an average size of ca. 225 μm are large aggregates of boron nitride flake-like crystals. It has bimodal particle size distribution which assists in increasing the particle packing density. This filler–matrix system provides a highly thermally conductive composite due to the capability of forming conductive networks with low thermal resistance along the conductive paths. The SEM picture of the composite fracture surface reveals good interfacial adhesion between the boron nitride filler and polybenzoxazine matrix. Water absorption of the filled systems at 24 h is <0.1% and decreases with increasing filler content.     

聚合物在纳米半导体材料中的应用

半导体纳米材料在光、电、磁、催化等方面具有不同于本体的一系列特性。在纳米材料及其器件制备中，聚合物有着重要的应用。它不仅可以有效地稳定纳米晶粒尺寸，而且可以钝化表面，增强纳米微粒的发生效果。而纳米半导体对光导聚合物的光电行性也有增强作用。将电致发光聚合物与纳米半导体微粒组合而成双层异质结FL器件，可提高器件效率和寿命，甚至可以构成光导与电致发光双功能器件。     

Phenomenological analysis of the optoelectrochemical behavior of electrochromic intercalation devices

A set of phenomenological analysis tools have been developed for the characterization of the optoelectrochemical behavior of electrochromic intercalation devices. Both step current and step potential excitations are considered. Great simplification is afforded by working with the passed charge as the primary independent variable; consideration is also given, however, to the transmission or built-in device potential as independent variables. It is shown that quasi-static intercalation efficiency curves, generated from step current measurements, can elucidate the intercalation site-energy distribution; these curves are also compared to dynamic intercalation efficiency curves obtained from step potential measurements. Quasi-static and dynamic optical efficiencies are also considered and compared. The scaling properties of some of the phenomenological parameters may be used to generate master curves which unify sets of data obtained under a variety of conditions (applied voltages, imposed currents, film thicknesses, etc.). Quantitative predictions can be made of device behavior under conditions not probed experimentally. Received: 17 April 1997 / Accepted: 2 September 1997     

TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and its multi-layered gate architecture,Part II: Analog and large signal performance evaluation

Part I of this paper dealt with the hot carrier reliability evaluation of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving channel recession and gate electrode workfunction engineering integration onto the conventional MOSFET, using an ATLAS device simulator. It was demonstrated that with the gate stack architecture incorporated onto the GEWE-RC MOSFET and tuning of various structural design parameters such as gate length (_LG$L_G$), negative junction depth (NJD), substrate doping (_NA$N_A$), gate metal workfunction, substrate bias (_VSUB$V_{SUB}$), drain bias (_VDS$V_{DS}$) and gate oxide permittivity (_εox2${\epsilon }_{ox2}$), excellent hot carrier immunity can be achieved in terms of conduction band offset, reduced electron velocity, electron temperature, hot electron injected gate current and impact ionization substrate current. This paper focuses on the analog and large signal performance metrics in terms of linearity, intermodulation distortion, device efficiency and speed-to-power dissipation design parameters. Moreover, the paper also discusses the effect of gate stack architecture and various design parameters such as _LG$L_G$, NJD, _NA$N_A$, gate metal workfunction and _εox2${\epsilon }_{ox2}$ for different substrate (_VSUB$V_{SUB}$) and drain to source (_VDS$V_{DS}$) voltages. The work, thus, proves the effectiveness of GEWE-RC for RFICs with a higher efficiency, better linearity performance; and designing and modeling of power amplifiers.     

The optical measurement station for complex testing of microelements

The paper presents a concept of optical measurement station for complex testing of microelements including MEMS, MOEMS and electronic components and assemblies. The wide selection of examples proves that the specific measurement requirements are fulfilled by alternative usage of combined conventional and grating interferometers CI/GI (reflective surfaces), in-plane and out-of-plane ESPI (scattering surfaces) and digital holographic interferometry DHI (mixed surfaces) supported by thermovision. All these methods are realized by integrated microinterferometer (IWaM) based on a glass waveguide or air cavity waveguide arrangements. The air cavity IWaM allows to form a thermal output for combined thermovision CI/GI or ESPI measurements.IWaM has a compact design insensitive to mechanical vibrations and may be easily rearranged to work with the selected measurement techniques. It is also fully integrated with an optical microscope and it is designed to work both in laboratories and in production environments.