Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic bilayers

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic （FM/AF） bilayers has been investigated in detail by extending Slonczewski＇s ＇proximity magnetism＇ idea. Here three important parameters are discussed for FM/AF bilayers, i.e. interracial bilinear exchange coupling J1, interracial biquadratic （spin-flop） exchange coupling J2 and antiferromagnetic layer thickness tAF. The results show that both the occurrence and the variety of the exchange bias strongly depend on the above parameters. More importantly, the small spin-flop exchange coupling may result in an exchange bias without the interracial bilinear exchange coupling. However, in general, the spin-flop exchange coupling cannot result in the exchange bias. The corresponding critical parameters in which the exchange bias will occur or approach saturation are also presented.     

Dynamics of cooperative emissions in a cascade three-level molecular system driven by an ultrashort laser pulse

This paper investigates the dynamics of cooperative emissions in a cascade three-level system driven by an ultra, short laser pulse by solving numerically the full-wave Maxwell-Bloch equations. The 4, 4＇-bis（dimethylamino） stilbene molecule is used as the model molecule because of its strong two-photon absorption property. The two-colour cooperative emissions are studied as functions of molecular number density and dephasing rate of the dipole coherence. The propagation effects on the evolution of the cooperative radiations are also taken into account. The cooperative radiations are enhanced for large number density of the molecule, while the fast dephasing of the dipole coherence reduces the intensity of the cooperative radiations and delays the emission times or even inhibits the formation of the emissions. The delay time of the radiation decreases with the increase of the molecular number density and the propagation distance.     

Search for exotic state 1-+ π1(1400) at BESⅢ

The J/ψ hadronic decays provide good laboratory to search for the hybrid states with exotic quantum numbers. A full Partial Wave Analysis (PWA) is performed to the generated Monte Carlo J/ψ→ pηπ data, based on the design of BESⅢ detector, to study the sensitivity of searching for a possible exotic state at BESⅢ.     

利用不完全自锁模激光研究C60的反饱和吸收效应

本文报道首次采用色心晶体的不完全自锁模激光（１０６４ｎｍ）对Ｃ６０分子反饱和吸收效应的研究，实验结果与采用平均过程的研究方法是一致的，文中还讨论了Ｃ６０分子反饱和吸收效应产生的原因。     

用TDMA法计算谐振子在强激光脉冲下的高次谐波

用含时薛定谔方程的多态展开(TDMA)方法求解含时薛定谔方程。该方法将含时波函数以基函数展开，通过求解展开系数的一阶微分方程组得到任意时刻的波函数。并将这一方法用于强激光场中谐振子的高次谐波的计算，以HCl分子为例，计算了在脉冲激光作用下高次谐波的产生和对应的激光强度、波长和脉冲宽度。     

低密度氢气的分子间平均相互作用势理论和计算

本文提出了分子单中心模型,并通过对构型的平均,两个定理的提出与证明,色散能修正的证明,从数学上论证了这个模型的合理性。由此模型可以直接求出两个氢分子间的平均相互作用势,从而改变了长期以来,总是先算有限几种构型然后再作平均的传统作法。通过数字计算,得到了迄今为止最好的全程平均相互作用势曲线。势阱深度及平衡分子间距分别为-2.91meV和3.44(实验值:-2.85～-3.00meV,3.43～3.49)。     

水溶性高聚物聚丙烯酰胺的稀溶液性质(Ⅰ)

本工作利用光散射和粘度方法,使用辐射聚合聚丙烯酰胺(PAAM)的级分样品,研究了在较宽分子量范围(10~4-10~7)内PAAM的特性粘数,分子尺寸及第二维利系数对重均分子量的依赖性.从实验上得到了PAAM在0.2mol/lNaCl水溶液中的均方旋转半径与均方末端距之间的关系及高分子-溶剂相互作用参数.