Tilt of InGaN layers on miscut GaN substrates

We report on the crystallographic orientation of InGaN layers grown on GaN substrates with a miscut with respect to c ‐planes up to 2.5°. The samples were examined using high‐resolution X‐ray diffraction (HRXRD) and atomic force microscopy (AFM). Because of the large (up to about 2% in this study) lattice mismatch between InGaN and GaN, an additional tilt between the c lattice planes of InGaN and GaN was observed and explained by using the Nagai model [J. Appl. Phys. 45 , 3789 (1974)]. We observed that for part of the samples, this tilt is about 10% smaller compared to the one predicted by the model. The experimental data are important for understanding the microstructure of InGaN layers grown on substrates of non‐perfect morphology. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ostwald ripening for designing time-dependent crystal hydrogels

Ostwald ripening (OR), a classic solution theory describing molecular transfer from metastable crystal to stable one, is applied to design time-dependent crystal hydrogels that can automatically change their mechanical properties. Using a system made from crosslinked polyacrylamide (PAM) and sodium acetate (NaAc), we demonstrate that metastable fibrous crystal networks of NaAc preferably form in PAM hydrogels via a polymer-involving mismatch nucleation. These fibrous crystals would undergo OR and evolve into isolated bulk crystals, leading to a significant reduction in material rigidity (179 folds) and interfacial adhesion (20 folds). This transformation can be applied to program time-dependent self-recovery in shape and self-delamination. Since OR is a ubiquitous, robust feature of various crystals, the approach reported here represents a new direction for designing advanced transient soft materials.     

负载不匹配对大功率速调管输出特性的影响

采用微波等效电路和3维电磁场计算软件研究了负载不匹配对大功率速调管输出腔的谐振频率、间隙阻抗和外观品质因数的影响。并采用1维大信号计算软件研究了负载不匹配对速调管效率的影响。对C波段速调管的研究表明：对于单间隙输出腔,负载不匹配对谐振频率影响较小,对间隙阻抗和等效外观品质因子影响较大,当负载驻波比为1.5时,谐振腔的谐振频率变化约35 MHz,间隙阻抗实部最大值变化为3 660~7 998 Ω,等效外观品质因子变化为36.9~93.5,中心频率处的效率下降4.6%。对于滤波器加载输出电路,负载不匹配对阻抗-频率特性和效率-频率特性有较大影响,当负载驻波比为1.5时,中心频率处的效率下降11.2%。当负载驻波比小于1.2时,负载失配对速调管性能的影响较小。     

金属基复合材料中的热残余应变场及其对材料细观行为的影响

基于SiC/Al基复合材料中的SiC颗粒周期性排布的假设,采用轴对称体胞方法研究了金属基复合材料中的热残余应变场与粒子形状、体积分数等参数间的内在联系;在此基础上,探讨了热残余应变对夹杂内部和基体-夹杂界面的应力集中因子的影响.所得结果对于理解热残余应变对空洞形核的影响有参考价值.     

超短中红外参量放大过程的时空走离特性

计算了MgO:LiNbO3晶体中,共线与非共线相位匹配光参量放大产生超短中红外激光脉冲过程中的相位匹配曲线、有效非线性系数以及时间和空间走离情况。结果表明,采用非共线相位匹配方式,可以实现三波间群速度匹配;在抑制了泵浦光与信号光之间的空间走离的同时加大了泵浦光与闲频光之间的空间走离,但这种影响可以忽略;同时非共线角的引入使相位匹配角增大,提高了有效非线性系数。因此,非共线角的引入在不影响空间走离的情况下,有效补偿超短中红外参量放大过程中的时间走离,有利于参量放大转换效率的提高。     

高通量条件下KDP晶体三倍频参数的优化

采用四阶龙格-库塔（R-K）数值计算方法,以Ⅰ／Ⅱ角度失谐和Ⅱ／Ⅱ偏振失配两种三倍频方案为例,给出了入射基频光为平面方波,功率密度5GW/cm2的情况下 ,KDP晶体三倍频参数的优化结果。     

相干噪声快速去除算法及其在声源定位中的应用

针对相干噪声干扰声源辨识问题,将强跟踪滤波器理论与阵列-信号采集模型相结合,发展了一种快速估计相位变化的算法。算法引入多重次优渐消因子,能够进一步提取相位残差中的有用信息,使输出残差序列处处正交,且该因子能根据噪声相位差变化自动调节。通过仿真对连续相位突变进行跟踪表明,在参数失配条件下该算法实现了相位差的准确估计,且其性能在宽频范围具有稳定性。通过音箱实验给出了宽频范围内的成像结果,与已有算法对比表明,该算法不仅能够实时消除噪声干扰并可将收敛速度提高一倍以上。本研究实现了对随机变化相位的准确估计,提升了传声器阵列在相干噪声干扰下的声源实时定位能力。     

导电高分子在神经界面电极中的应用

神经界面电极作为人体和外部器件间信息融合的媒介, 为人们进一步探究神经系统高级功能的机制提供了有效工具. 传统的神经电极多以金属和半导体材料为主, 这两类材料因具有惰性材料的特性及优越的 导电性能而成为早期神经电极的主要制备材料, 但由于其刚性过大和光滑表面导致的机械失配及与生物组织间过高的电化学阻抗限制了神经电极的进一步发展. 导电高分子作为一种有机导电材料, 同时具备柔软性 (杨氏模量约在0.01~10 GPa)和导电性(高掺杂度的导电高分子的电导率在金属范围, 10⁰~10⁵ S/cm)的特征, 是制备神经电极的有效材料. 近年来, 人们利用导电高分子材料对传统电极材料进行改性甚至替代, 以提高电极比表面积、 减小界面阻抗, 并提高电极检测的灵敏性; 同时减小电极与组织间的应变失配, 减少炎症反应, 并进一步在导电高分子中引入功能性生物大分子, 减少生物组织对电极的排异反应, 增加电极在体内长期植入的稳定性. 本文讨论和总结了导电高分子材料在神经电极中的应用, 分别对导电高分子作为涂层修饰神经电极、 全导电高分子材料神经电极及导电高分子复合材料神经电极等展开讨论, 分析了导电高分子在神经界面电极中的应用前景及存在的问题, 以期对神经界面电极在脑科学和生物电子医疗等前沿领域的进一步发展提供参考.     

Silicon nanowires as field-effect transducers for biosensor development: A review

The unique electronic properties and miniaturized dimensions of silicon nanowires (SiNWs) are attractive for label-free, real-time and sensitive detection of biomolecules. Sensors based on SiNWs operate as field effect transistors (FETs) and can be fabricated either by top–down or bottom–up approaches. Advances in fabrication methods have allowed for the control of physicochemical and electronic properties of SiNWs, providing opportunity for interfacing of SiNW-FET probes with intracellular environments. The Debye screening length is an important consideration that determines the performance and detection limits of SiNW-FET sensors, especially at physiologically relevant conditions of ionic strength (>100 mM). In this review, we discuss the construction and application of SiNW-FET sensors for detection of ions, nucleic acids and protein markers. Advantages and disadvantages of the top–down and bottom–up approaches for synthesis of SiNWs are discussed. An overview of various methods for surface functionalization of SiNWs for immobilization of selective chemistry is provided in the context of impact on the analytical performance of SiNW-FET sensors. In addition to in vitro examples, an overview of the progress of use of SiNW-FET sensors for ex vivo studies is also presented. This review concludes with a discussion of the future prospects of SiNW-FET sensors.