从高质量半导体/超导体纳米线到马约拉纳零能模

作为马约拉纳费米子的"凝聚态版本",马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量...     

钙钛矿/硅异质结叠层太阳电池:光学模拟的研究进展

近几年,钙钛矿/硅异质结叠层太阳电池发展迅速,效率已经从13.7％提升到29.1％.由于叠层电池器件的制作工艺复杂,而叠层太阳电池中的光学损失对转换效率的影响很大,所以通过光学模拟进而获得高效电池至关重要.本文首先从商业软件和自建模型两方面概述了光学模拟的方法,接着从反射损失和寄生吸收两方面针对光学模拟研究进展进行了总...     

Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.     

On K‐Theory of Simplicial Rings and Degreewise Constructions

We give a measure of the difference between Waldhausen's definition of the Ktheory of a simplicial ring and the definition we obtain by extending Quillen's definition degreewise. This has computational advantages as the degreewise Ktheory sometimes is simpler to work with.     

Preparation, structure, magnetic properties and special magnetoresistance effect of Lao.67Sr0.33Mn03+δ/Pr0.7Cao.3 Mn03+δ/Lao.67Sro.33Mn03+δ trilayered thin films

The La_0,67Sr_0.33Mn0_{3 +δ}/Pr_0.7Ca_o.3Mn0_3+δ/La_0.67Sr_0.33Mn0_3+δ(LPL) trilayered films on (100)LaA-1O₃ substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log_p-1/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowersp _max and enlargesT _p which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO’s gap. The two reasons above make the resistivity andT _p of the samples in zero field change with the thickness of PCMO layers. Project supported by the Chinese Academy of Sciences and the Foundation of State Science and Technology Commission of China.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Passivity-based control for Hopfield neural networks using convex representation

This paper considers the problem of passivity-based controller design for Hopfield neural networks. By making use of a convex representation of nonlinearities, a feedback control scheme based on passivity and Lyapunov theory is presented. A criterion for existence of the controller is given in terms of linear matrix inequality (LMI), which can be easily solved by a convex optimization problem. An example and its numerical simulation are given to show the effectiveness of the proposed method.     

MOCVD技术制备的ZnS:Mn电致发光薄膜结晶性及Mn2+分布

本文报导了用MOCVD技术制备的ZnS:Mn电致发光薄膜为立方晶相,结晶取向性好,颗粒大。从高倍率的扫描电镜拍摄的照片观察到薄膜的表面平滑。SIMS测量表明Mn2+在ZnS薄膜纵向分布均匀,但在两侧有起伏,可能的原因是在生长的初终阶段流量的突变使化合物的化学计量比偏离而产生位错,引起原子的局部堆积,并且由于初终阶段ZnS:Mn生长的衬底不同使原子堆积层厚度不同。     

两同型部件温贮备可修系统半离散化的研究

利用半离散的方法对两同型部件温贮备可修系统中的函数μ(x)进行离散,得到两个离散的方程,再利用算子半群的理论证明离散后方程的解收敛于原方程的解.     

Near-barrier fusion reactions induced by α on197Au,193Ir,191Ir,185Re,181Ta,121Sb and69Ga nuclei

Fusion-evaporation cross-sections for the α-induced reactions upon¹⁹⁷Au,¹⁹³Ir,¹⁹¹Ir,¹⁸⁵Re,¹⁸¹Ta,¹²¹Sb and⁶⁹Ga nuclei at bombarding energies near the Coulomb barrier have been measured by off-line observation of the γ-rays emitted in the radioactive decay of the residual nuclei using stacked foil technique. The total fusion cross-section for the systems have been compared with simple statistical model calculations using the code ALICE/91 as well as with the coupled channel calculations that include the β₂ and ν₄ slatic deformations and dynamic couplings of the vibrational/rotational states of the target and the projet tile using the code CCDEF.