首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   12635篇
  免费   821篇
  国内免费   1488篇
化学   11697篇
晶体学   436篇
力学   79篇
综合类   47篇
数学   153篇
物理学   2532篇
  2024年   18篇
  2023年   124篇
  2022年   276篇
  2021年   238篇
  2020年   381篇
  2019年   386篇
  2018年   343篇
  2017年   466篇
  2016年   454篇
  2015年   358篇
  2014年   455篇
  2013年   876篇
  2012年   1697篇
  2011年   695篇
  2010年   518篇
  2009年   701篇
  2008年   774篇
  2007年   869篇
  2006年   708篇
  2005年   622篇
  2004年   515篇
  2003年   440篇
  2002年   377篇
  2001年   345篇
  2000年   290篇
  1999年   313篇
  1998年   240篇
  1997年   201篇
  1996年   195篇
  1995年   178篇
  1994年   136篇
  1993年   114篇
  1992年   102篇
  1991年   76篇
  1990年   63篇
  1989年   47篇
  1988年   32篇
  1987年   36篇
  1986年   34篇
  1985年   20篇
  1984年   21篇
  1983年   12篇
  1982年   17篇
  1981年   21篇
  1980年   27篇
  1979年   29篇
  1978年   15篇
  1977年   22篇
  1976年   20篇
  1973年   18篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
211.
A generalization of the original Jensen-Shannon divergence (JSD) is presented in this work, which gives rise to a non-extensive one-parameter divergence providing a powerful dissimilarity measure between electronic distributions. The analysis performed in this study employs the JTD measure to compare one-particle densities of neutral and ionized atomic systems, that generalizes and improves some previous results based on other measures of divergence. Such an improvement mainly arises from the capability of JTD to modify, by means of its order parameter, the relative contribution of specific relevant regions of the atomic densities under comparison, in both position and momentum spaces. Relevant information of the ionization processes attending to structural pattern and periodicity is found, as well as the strong correlation between extremal values of the neutral-cation JTD and those of the atomic ionization potential. Similar conclusions are obtained from processes involving an anion. The analysis includes a study of the dependence of JTD on its order for fixed atomic couples.  相似文献   
212.
在pH 7.0HEPES(4-羟乙基哌嗪乙磺酸)缓冲溶液中和0.19mol.L-1 NaCl存在下,单链底物DNA(SS)和酶链DNA(ES)在80℃杂交形成双链DNA(dsDNA)。Cu2+可切割dsDNA中的底物链释放出单链DNA(ssDNA),此ssDNA与金纳米粒子(NG)作用形成NGssDNA结合物不被NaCl聚集,而未保护的NG聚集形成较大粒径的聚集体(NGA),在627nm处有一个较强的共振瑞利散射峰。随着Cu2+浓度的增大,该共振瑞利散射峰降低,其降低值ΔI与Cu2+浓度在15~1 250nmol.L-1范围呈线性关系,其回归方程为ΔI=0.17c-2.3,线性相关系数为0.989 5,检出限为8nmol.L-1。据此建立了一个高灵敏、高选择性、简便测定Cu2+的共振瑞利散射光谱分析法。该法用于水样中Cu2+的检测,结果满意。  相似文献   
213.
刘军芳  苏良碧  徐军 《物理学报》2013,62(3):37804-037804
采用高温熔融法制备了xBi2O3-50B2O3-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi2O3-50B2O3二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi2O3-50B2O3-50BaO及1Bi2O3-50B2O3-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.  相似文献   
214.
Na2CO3调质钙基脱硫剂硫化机理实验研究   总被引:7,自引:0,他引:7  
对经Na2CO3溶液调质石灰石煅烧产物CaO的物理结构及硫化特性进行了研究,发现同等条件下调质后石灰石煅烧产物CaO(M-CaO)比未经调质的CaO(N-CaO)具有更高的钙转化率.利用XRD技术对CaO晶体结构进行了测定,通过比较二者的晶胞参数和晶格畸变度等并结合其孔特性,证实M-CaO之所以比N-CaO具有更高的钙转化率,是由于M-CaO比N-CaO具有更高的晶体缺陷浓度,使得在硫化反应过程中通过产物层的扩散具有更高的离子扩散率.  相似文献   
215.
Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.  相似文献   
216.
Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×1012 ions/cm2. The samples used in this study are 50 nm Al0.2Ga0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E 1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E 1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.  相似文献   
217.
Y. Wang  B. Yang  N. Can 《哲学杂志》2013,93(2):250-262
In the majority of cases, the effects of ion implantation are confined close to the implant zone but, potentially, the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed for the possible mechanisms for bulk relaxations and structural characteristics, which may indicate where such instability may occur in other lattice structures.  相似文献   
218.
Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.  相似文献   
219.
实验研究了强流(几个nA/mm2)180 keV O6+离子穿越微米尺度锥形玻璃毛细管的聚焦效应.结果表明,毛细管出口处束流密度比入口处束流密度增加了6~7倍,且出射离子保持原有的电荷态及能量.此外我们发现,当毛细管倾斜一定角度时,离子出射方向偏向毛细管管轴方向.基于自组织充电模型对上述实验结果进行了讨论.  相似文献   
220.
胡宏伟  董晨钟 《物理学报》2006,55(12):6326-6332
在描述洞原子(或离子)退激发过程只考虑单俄歇跃迁和辐射跃迁的辐射-单俄歇级联退激发模型的基础上,进一步考虑了双俄歇跃迁的贡献,发展了辐射-单俄歇-双俄歇级联退激发模型.据此模型研究了Ar+(1s-1)(1s洞态氩离子)和Ar+(2s-1)(2s洞态氩离子)的退激发过程及末电离态离子的分布,获得了与实验相符的结果. 关键词: 辐射-单俄歇级联退激发模型 双俄歇跃迁 辐射-单俄歇-双俄歇级联退激发模型 洞离子退激发  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号