Jensen-Tsallis divergence and atomic dissimilarity for ionized systems in conjugated spaces

A generalization of the original Jensen-Shannon divergence (JSD) is presented in this work, which gives rise to a non-extensive one-parameter divergence providing a powerful dissimilarity measure between electronic distributions. The analysis performed in this study employs the JTD measure to compare one-particle densities of neutral and ionized atomic systems, that generalizes and improves some previous results based on other measures of divergence. Such an improvement mainly arises from the capability of JTD to modify, by means of its order parameter, the relative contribution of specific relevant regions of the atomic densities under comparison, in both position and momentum spaces. Relevant information of the ionization processes attending to structural pattern and periodicity is found, as well as the strong correlation between extremal values of the neutral-cation JTD and those of the atomic ionization potential. Similar conclusions are obtained from processes involving an anion. The analysis includes a study of the dependence of JTD on its order for fixed atomic couples.     

DNA酶裂解-纳米金共振瑞利散射光谱法测定痕量Cu2+

在pH 7.0HEPES(4-羟乙基哌嗪乙磺酸)缓冲溶液中和0.19mol.L-1 NaCl存在下,单链底物DNA(SS)和酶链DNA(ES)在80℃杂交形成双链DNA(dsDNA)。Cu2+可切割dsDNA中的底物链释放出单链DNA(ssDNA),此ssDNA与金纳米粒子(NG)作用形成NGssDNA结合物不被NaCl聚集,而未保护的NG聚集形成较大粒径的聚集体(NGA),在627nm处有一个较强的共振瑞利散射峰。随着Cu2+浓度的增大,该共振瑞利散射峰降低,其降低值ΔI与Cu2+浓度在15～1 250nmol.L-1范围呈线性关系,其回归方程为ΔI=0.17c-2.3,线性相关系数为0.989 5,检出限为8nmol.L-1。据此建立了一个高灵敏、高选择性、简便测定Cu2+的共振瑞利散射光谱分析法。该法用于水样中Cu2+的检测,结果满意。     

Bi2O3-B2O3-BaO玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了xBi₂O₃-50B₂O₃-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi₂O₃-50B₂O₃二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi₂O₃-50B₂O₃-50BaO及1Bi₂O₃-50B₂O₃-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.     

Na2CO3调质钙基脱硫剂硫化机理实验研究

对经Na2CO3溶液调质石灰石煅烧产物CaO的物理结构及硫化特性进行了研究,发现同等条件下调质后石灰石煅烧产物CaO(M-CaO)比未经调质的CaO(N-CaO)具有更高的钙转化率.利用XRD技术对CaO晶体结构进行了测定,通过比较二者的晶胞参数和晶格畸变度等并结合其孔特性,证实M-CaO之所以比N-CaO具有更高的钙转化率,是由于M-CaO比N-CaO具有更高的晶体缺陷浓度,使得在硫化反应过程中通过产物层的扩散具有更高的离子扩散率.     

Conversion Electron Moessbauer Spectroscopie Studies on Ion Implanted Iron Layers

Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.     

Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.     

Indications of bulk property changes from surface ion implantation

In the majority of cases, the effects of ion implantation are confined close to the implant zone but, potentially, the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed for the possible mechanisms for bulk relaxations and structural characteristics, which may indicate where such instability may occur in other lattice structures.     

An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

180keV O6+离子与锥形玻璃毛细管相互作用研究

实验研究了强流（几个nA/mm2）180 keV O6+离子穿越微米尺度锥形玻璃毛细管的聚焦效应.结果表明,毛细管出口处束流密度比入口处束流密度增加了6~7倍,且出射离子保持原有的电荷态及能量.此外我们发现,当毛细管倾斜一定角度时,离子出射方向偏向毛细管管轴方向.基于自组织充电模型对上述实验结果进行了讨论.     

洞态氩离子的退激发及末电离态离子分布的理论研究

在描述洞原子(或离子)退激发过程只考虑单俄歇跃迁和辐射跃迁的辐射-单俄歇级联退激发模型的基础上,进一步考虑了双俄歇跃迁的贡献,发展了辐射-单俄歇-双俄歇级联退激发模型.据此模型研究了Ar⁺(1s^-1)(1s洞态氩离子)和Ar⁺(2s^-1)(2s洞态氩离子)的退激发过程及末电离态离子的分布,获得了与实验相符的结果. 关键词： 辐射-单俄歇级联退激发模型 双俄歇跃迁 辐射-单俄歇-双俄歇级联退激发模型 洞离子退激发