绝缘环打火研究

绝缘问题是高电压、高场强器件和设备中不可回避的问题,是决定器件、设备运行参数和稳定性的重要因素。针对一台直线感应加速器调试中出现的加速腔绝缘环在带束负载情况下的真空沿面闪络现象,进行了分析和研究。分析表明,在排除设计、材料、加工、洁净和真空度等常规异常因素后,导致绝缘环真空沿面闪络的可能因素是电子在绝缘环表面的吸附和累积,绝缘环上累积的电子来源和加速器中加速、传输的电子束的丢失有关。从加速腔工作状态出发,分析绝缘环表面积累电荷和丢失电子束的相关途径,进而提出相应的技术措施,以提高加速腔运行稳定性。     

一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

设计了一款全差分、20 GHz带宽主从式跟踪保持芯片（MS-THA）。该芯片采样率为2 G/s,工作带宽大于20 GHz,采用0.13 μm SiGe BiCMOS工艺实现。该芯片采用传统的开关发射极跟随器（SEF）作为跟踪保持核心电路,Cherryhooper电路作为输入缓冲和输出缓冲的带宽增强核心电路,并利用交叉反馈电容抑制馈通。为了验证上述电路的有效性,设计了一个单级THA电路,测试结果为MS-THA电路提供了足够的支持。在单电源+3.3 V供电、输入直流电平为0 V,2 G/s采样率以及−3 dBm输入信号功率条件下,获得的单端输出无杂散动态范围小于−23.5 dB,总功耗约为300 mW。     

Theory of hydrogen solubility in binary iron alloys based on ab initio calculation results

Interaction of hydrogen atoms with three substitutional impurities (X?=?Pd, Ti, Cr) in bcc iron base solid solution was modelled ab initio using the WIEN2k package. It was shown that in spite of attraction between H and X atoms, excess energy of the H atom in tetrahedral sites in the first sphere of coordination of the X atom has a significant positive value, while the lowest negative values are observed in the second (Pd, ?0.087?eV; Ti, ?0.091?eV) or the third (Cr, ?0.032?eV) sphere. A new thermodynamic theory of hydrogen solubility in dilute bcc Fe–X alloys was developed on the basis of these results. The resulting equation was used to analyze existing experimental data on H solubility in a number of Fe–X alloys, and X–H interaction energies were determined for each case. The energies determined from high-temperature solubility data for Fe–Pd, Fe–Ti and Fe–Cr are somewhat greater than those obtained in ab initio calculations. The theory gives a new basis for analyzing hydrogen behaviour in iron-base solid solutions.     

稀土原子与离子的自然辐射寿命测量

概述了当前自由原子和离子的激发态自然辐射寿命测量技术的进展。以LaⅠ和PrⅡ为例,系统介绍了几种稀土元素自由原子和离子激发态寿命测量技术并分析了它们的优缺点;以SmⅡ为例,详细介绍了激光烧蚀产生自由原子(离子)技术及结合激光诱导荧光时间分辨光谱技术进行激发态寿命测量的优缺点。最后,探讨了改进上述技术局限性的解决思路,以期进一步提高辐射寿命测量的精确度。     

Anomalous energy loss distributions of alpha particles in heavily implanted thin aluminium films

Anomalous energy loss distributions of ^l48Gd alpha particles have been observed in heavily implanted thin aluminium films. It is surmised that thin film micro-wrinkling is responsible for the observed effect and that the novel technique of energy loss spectral analysis (ELSA) should be useful in studies of the topography of such films.     

Improving the Flame Retardancy of Polybenzoxazines with a Reactive Phosphorus-Containing Compound

A novel flame retardant resin was prepared by modifying benzoxazines with a reactive phosphorus-containing compound, 2-(6-Oxido-6H-dibenzo[c,e][1,2]oxa-phosphorin-6-yl) 1,4-benzenediol (ODOPB). The curing reactions of the benzoxazines containing ODOPB (ODOPB-BOZ) and a type of bifunctional benzoxazine (B-BOZ) were investigated via differential scanning calorimetry. The ODOPB-BOZ precursors exhibited lower curing temperature in comparison with the B-BOZ. Through dynamic mechanical analysis tests, it was found that the glass transition temperature and storage modulus of the cured ODOPB-BOZ were lower than those of the cured B-BOZ. Moreover, the tensile and flexural properties of the cured ODOPB-BOZ were also lower than those of the cured B-BOZ. The TGA tests proved that, owing to the presence of ODOPB, the char yield of the polybenzoxazines were remarkably raised while the decomposition rates at higher temperature were reduced. It was found that the flame retardancy of cured ODOPB-BOZ attained V-0 grade upon the UL-94 tests while that of cured B-BOZ was V-1 grade. SEM images showed that more compact char layers were formed in the cured ODOPB-BOZ after combustion, resulting in the improvement of flame retardance.     

Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment

An overview of recent experimental and theoretical results on stationary and time-dependent photoluminescence spectra in disordered semiconductor heterostructures is presented. In particular, temperature-dependent peak position and linewidth of the luminescence spectra, as well as the luminescence intensity are considered along with the time evolution of the luminescence intensity after pulsed excitation. Emphasis is given on the comparison between experimental and theoretical results aiming at a characterization of disorder in the underlying structures.     

Quenching of the Haldane gap in LiVSi<Subscript>2</Subscript>O<Subscript>6</Subscript> and related compounds

We report results of susceptibility χ and ⁷Li NMR measurements on LiVSi₂O₆. The temperature dependence of the magnetic susceptibility χ(T) exhibits a broad maximum, typical for low-dimensional magnetic systems. Quantitatively it is in agreement with the expectation for an S=1 spin chain, represented by the structural arrangement of V ions. The NMR results indicate antiferromagnetic ordering below T_N=24 K. The intra- and interchain coupling J and J_p for LiVSi₂O₆, and also for its sister compounds LiVGe₂O₆, NaVSi₂O₆ and NaVGe₂O₆, are obtained via a modified random phase approximation which takes into account results of quantum Monte Carlo calculations. While J_p is almost constant across the series, J varies by a factor of 5, decreasing with increasing lattice constant along the chain direction. The comparison between experimental and theoretical susceptibility data suggests the presence of an easy-axis magnetic anisotropy, which explains the formation of an energy gap in the magnetic excitation spectrum below T_N, indicated by the variation of the NMR spin-lattice relaxation rate at T≪T_N.     

基于无消相干子空间的量子避错码设计

针对量子系统的联合消相干模型,可以找到一些不受消相干错误影响的系统状态,这种状态被称为相干保持态,所有相干保持态构成的空间就称为无消相干子空间(decoherencefreesubspace,缩写为DFS).利用DFS的特性可以实现自动容错的量子避错码.首先提出一种DFS的定义,并且以定理的形式证明其他DFS的定义都是等价的.然后给出了DFS的存在性定理.最后利用群论的方法设计一种构造DFS的简单方法 关键词： 相干保持态 无消相干子空间 量子避错码 容错量子计算     

Six‐wave mixing induced by free‐carrier plasma in silicon nanowire waveguides

Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.