Density functional theory investigation of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0)

The adsorption of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0) has been investigated using density functional theory (DFT). While experimental studies of CN on Cu(1 1 1) show the molecular axis to be essentially parallel to the surface, the normally-preferred DFT approach using the generalised gradient approximation (GGA) yields a lowest energy configuration with the C-N axis perpendicular to the surface, although calculations using the local density approximation (LDA) do indicate that the experimental geometry is energetically favoured. The same conclusions are found for CN on Ni(1 1 1); on both surfaces bonding through the N atom is always unfavourable, in contrast to some earlier published results of ab initio calculations for Ni(1 1 1)/CN and Ni(1 0 0)/CN. The different predictions of the GGA and LDA approaches may lie in subtly different relative energies of the CN 5σ and 1π orbitals, a situation somewhat similar to that for CO adsorbed on Pt(1 1 1) which has proved challenging for DFT calculations. On Ni(1 0 0) GGA calculations favour a lying-down species in a hollow site in a geometry rather similar to that found experimentally and in GGA calculations for CN on Ni(1 1 0).     

Converged properties of clean metal surfaces by all-electron first-principles calculations

All-electron full-potential linearized augmented plane-wave calculations of the surface energy, work function, and interlayer spacings of close-packed metal surfaces are presented, in particular, for the free-electron-like metal surfaces, Mg(0 0 0 1) and Al(1 1 1), and for the transition metal surfaces, Ti(0 0 0 1), Cu(1 1 1), Pd(1 1 1), and Pt(1 1 1). We investigate the convergence of the surface energy as a function of the number of layers in the slab, using the Cu(1 1 1) surface as an example. The results show that the surface energy, as obtained using total energies of the slab and bulk from separate calculations, converges well with respect to the number of layers in the slab. Obviously, it is necessary that bulk and surface calculations are performed with the same high accuracy. Furthermore, we discuss the performance of the local-density and generalized gradient approximations for the exchange-correlation functional in describing the various surface properties.     

para-Sexiphenyl thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O surfaces

We present a reflectance difference spectroscopy (RDS) study of para-sexiphenyl (p-6P) thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O substrates. The RDS spectra show pronounced anisotropies for p-6P films formed on both substrates at room temperature, demonstrating that the molecules are uniaxially aligned within the films. Based on the RD spectra and the evolution of the optical transitions with p-6P coverage the growth mode on both substrates could be identified. From the dominating RDS feature, assigned to the lowest energy HOMO-LUMO transition, the orientation of the molecular chain can be determined. On Cu(1 1 0), the p-6P molecular chains align in the direction, i.e., along the Cu atomic rows, whereas on the Cu(1 1 0)-(2 × 1)O surface, the molecules are oriented in the orthogonal [0 0 1] direction, i.e., along the “added” Cu-O rows of the Cu(1 1 0)-(2 × 1)O surface. The energetic position and line shape of the main RDS feature differs for the two substrates and varies with p-6P coverage. This fine structure is discussed in terms of different molecular conformations, adlayer structure and vibronic replicas.     

Reflection absorption infrared study of the adsorption of dimethylamine on copper (1 1 0) and nickel (1 1 1) surfaces

The adsorption of dimethylamine on Cu(1 1 0) and Ni(1 1 1) has been studied by reflection absorption infrared spectroscopy. For Cu(1 1 0), adsorption was molecular at 80 and 300 K and for submonolayer dimethylamine the appearance of A′ and not A″ modes indicated C_s symmetry. Similar bonding was found for Ni(1 1 1) at 170 K. Annealing the adlayer to 350 K resulted in the formation of a new species on Ni(1 1 1), similar to that which has been identified as methylaminocarbyne on Pt(1 1 1). In contrast only molecular dimethylamine was identified on Cu(1 1 0), with H-bonded interactions at high coverage and a potential surface dimer.     

Site segregation in size-mismatched nanoalloys: Application to Cu-Ag

In order to determine the energetic driving forces for surface segregation in bimetallic clusters, we use a combined approach coupling numerical simulations within an N-body interatomic potential and a lattice-gas model. This approach, which has been used successfully to study both the superficial segregation in semi-infinite alloys and the intergranular segregation, allows us to determine the relative contributions of the three elementary driving forces for the different sites of the cluster surface (vertices, edges and facets) in both dilute limits for the Cu-Ag system. We show that the segregation hierarchy based on broken-bond arguments (preferential segregation to the vertex sites, less to edge sites, and least to facet sites) is not at all universal. In particular, unusual hierarchies are predicted when the sizes of the constituents are strongly different. Furthermore, we compare the segregation driving forces for cubo-octahedral and icosahedral clusters. They are similar for the vertex sites and edge sites, whereas they differ significantly for the sites of the triangular facets. The segregation of the species with the largest atomic radius (Ag) is indeed largely enhanced in the icosahedral structure due to dilations of the orthoradial distances.     

Effects of electromigration on copper atoms in carbon nanotube channels

The effects of electromigration on copper in carbon nanotube (CNT) channels are investigated using molecular dynamics simulations. The study shows that the potential energy of copper and the resistive forces on copper are dependent on the shape of the CNT junction, and the increase in bias voltages magnifies these effects. Bias voltages affect the density of copper in the downstream CNT. The velocity of copper in the downstream CNT is relatively lower than that in the upstream CNT when the biased voltage is high.     

Aminealkylthiol and dithiol self-assembly as adhesion promoter between copper substrate and epoxy resin

To improve adhesion between copper and epoxy resin in printed circuit board, a roughness treatment of copper has been widely used. Nevertheless, new adhesion promoters have to be developed to face the miniaturization and sophistication of the electronic device. Self-assembled monolayers have met increasing interest in this field by using them as coupling agent between copper and the epoxy resin.This paper presents the deposition of an epoxy resin on copper modified by amine alkylthiol and dithiol monolayers and highlights the benefit brought by the monolayer in terms of adhesion.The chemical linkage between the amine SAMs and the epoxy function has been proved by the deposition on a short epoxy fragment, the 2-(4-fluorophenoxy-methyl)oxirane. The deposition of an epoxy resin mixed with amine curing agent has then been successfully achieved on amine terminated SAMs. The resulting polymer is homogeneous and well adherent on their surface, while the adhesion is lower on bare copper and not existing on methyl terminated SAMs. The formation of chemical bond Cu-S and N-epoxy is thus essential to increase the adhesion strength between copper and the polymer.     

Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.     

自组装硫化铜微米管的制备及可见光催化性能

以二水合氯化铜为铜源,硫代乙酰胺为硫源,通过共沉淀法成功合成了自组装CuS微米管,该合成方法简单、反应条件温和,是合成纳米材料的一种有效方法。通过扫描电子显微镜（SEM）考察反应时间对产物形貌的影响,并初步研究其形成过程。X射线衍射（XRD）表征产物是CuS。通过改变光催化实验的条件,如催化剂的量、溶液pH值、活性橙的浓度,研究了样品在可见光下对活性橙的光催化性能。