超声波对材料力学性能影响实验研究

研究超声波作用下材料的特殊力学行为,建立一套超声波作用对材料影响的实验系统,通过对紫铜和低碳钢试件的实验研究,给出材料特性变化的实验数据,并利用其对这些特殊现象的形成机理进行初步探讨。     

化学处理增强光学材料的抗激光破坏强度

报道了用化学处理方法提高光学材料的抗激光破坏强度的实验结果,化学处理使和Ｋ２玻璃的激光损伤阈值分离提高３倍和４倍,对晶体和熔石英的化学处理也得取和较好的工对加固机理作了分析。     

非线性振动系统动力学行为的实验研究

本文综述了非线性振动系统动力学行为的实验研究,详细叙述了机械模型实验,实验数据的分析与处理,并对今后发展趋势作了述评．     

Corroborating study on the absolute configurations of trigochinins A–C

Trigochinins A–C (1–3) are three highly oxygenated daphnane-type diterpenes isolated from Trigonostemon chinensis. Their structures with the absolute configurations were initially assigned by a combination of spectroscopic data, X-ray crystallography (Mo Kα radiation) study and CD analysis. In the current study, the absolute configurations of trigochinins A–C were confirmed by single crystal X-ray diffraction (Cu Kα radiation) study, CD spectral analogy, and theoretical ECD study by using quantum chemical TDDFT calculations.     

色谱柱分类数据库用于指导天然药物化学对照品色谱纯度测定时色谱柱理性选择

由于中药化学对照品多数来源于动植物药材,很容易混有结构类似物,故有机杂质测定是可能影响其化学对照品赋值准确性的关键风险因素。中药化学对照品的有机杂质测定通常采用药典收载或文献报道的高效液相色谱法,这些方法通常仅规定“以十八烷基硅烷键合硅胶为填充剂”,无适宜色谱柱的品牌信息,或者实验室无文献所用的色谱柱品牌,而目前市场上已有800多种品牌的C₁₈柱,生产工艺的不同导致不同品牌C₁₈柱的选择性有差异,甚至差异显著。这很容易出现由于色谱柱选择不适宜而导致测定结果不准确的风险。该文采用国外色谱柱分类数据库指导对照品纯度考察时色谱柱的理性选择,尽可能减少色谱柱盲选可能导致的纯度结果不准确的风险。首先,用数据库挑选2根选择性差异显著的色谱柱（选择性因子F≥6）进行平行实验,以尽可能反映采用不同品牌色谱柱可能出现的分离效果差异。如果这2根色谱柱的分离效果及纯度测定结果无显著性差异,则可以交叉验证该对照品纯度测定的准确性。否则需要从数据库中选择另外1根与之前试验中分离效果更好、选择性相似的色谱柱进行纯度结果验证。在N-反式-p-对香豆酰基酪胺和表儿茶素没食子酸酯首批对照品的纯度考察中,使用了上述策略并验证了其有效性和科学性,计划推广应用至更多的中药化学对照品,特别当其可能含碱性或弱酸性化合物时,更应该尝试采用本文推荐的色谱柱选择策略交叉验证其纯度测定结果的准确性。     

Co掺杂ZnO薄膜的湿化学法制备及其光致发光光谱

采用湿化学法在Si衬底上生长了纳米棒结构的Co掺杂ZnO薄膜,并研究了掺杂浓度对生成样品结构和性能的影响.研究表明这种湿化学法成本低廉、收益高、重复性良好.样品的XRD结果表明掺杂的ZnO没有出现杂相.SEM结果表明掺杂样品是由ZnO纳米棒团簇结构组成,且团簇的密度随着Co掺杂浓度的增大而增大.薄膜的光致发光光谱结果表明Co掺杂导致薄膜的带隙发生红移,同时也证明了Co原子有效地进入了ZnO晶格.     

Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors

InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) with different spacer layer structures were grown by metalorganic chemical vapor deposition. Fast-Fourier-transformed high-resolution transmission electron microscopy was used to determine the influence of the strain status in the spacer layer on Mg distribution and device performance. A comparison of the (1 1¯ 0 0) planar distance showed that the high-temperature grown InGaN layer in the spacer had a high level of stored strain. This led to the formation of a continuous facet contrast induced by Mg segregation in the p-layer, which was responsible for the deterioration of the electroluminescence performance of the LEDs. These results show that the delicate control of stored strain in nitride films is important for improving the device performance.     

Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.     

Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition

Tungsten trioxide (WO₃) nanobelts in tetragonal structure were grown on Si substrates by a hot-wall chemical vapor deposition (CVD) method without using catalysts. The products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectrum. The width of the nanobelts is in the range of 50–100 nm with width-to-thickness ratios of 5–10 and lengths of up to tens of micrometers. These nanobelts grew along the [0 0 1] direction and can be identified as the tetragonal WO₃ structures. Raman and PL measurements indicate the high quality of the nanobelts. The vapor–solid growth mechanism could be applicable in our experiment.     

GaP:Mg layers grown on GaN by MOCVD

We have investigated the growth of magnesium-doped GaP (GaP:Mg) layers on GaN by metalorganic chemical vapor deposition. The hole carrier concentration increased linearly from 0.8×10¹⁸ to 4.2×10¹⁸ cm⁻³ as the Bis(cyclopentadienyl) magnesium (Cp₂Mg) mole flow rate increased from 1.2×10⁻⁷ to 3.6×10⁻⁷ mol/min. However, the hole carrier concentration decreased when the CP₂Mg mole flow rate was further increased. The double crystal X-ray diffraction (DCXRD) rocking curves showed that the GaP:Mg layers were single crystalline at low CP₂Mg molar flow. However, the GaP:Mg layers became polycrystalline if the CP₂Mg molar flow was too high. The decrease in hole carrier concentration at high CP₂Mg molar flow was due to crystal quality deterioration of the GaP layer, which also resulted in the low hole mobility of the GaP:Mg layer.