Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

应力对La0.83Sr0.17MnO3薄膜输运性能的影响

采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明，LSMO薄膜属于正交晶体结构，薄膜取向与膜厚度 有关，当膜厚度为450nm或680nm时，主要取向〈200〉，而膜厚度为900nm时取向为〈020〉 ：根据离子对相互作用能和谐振子模型，得到了红外吸收与Mn—O—Mn键长和键角关系式，6 00cm^-1附近红外吸收与晶格常数b的变化有关；块体与薄膜的金属—绝缘体转变 温度(T_MI)存在较大差别，薄膜转变温度显著低于块体，并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化，引起键角改变及JT效应是转变温度变化的主 要原因. 关键词： 单晶硅 晶格常数 金属—绝缘体转变温度 应力诱导     

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

Sol–gel derived Fe₂O₃ films containing about 10 wt% of Er₂O₃ were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed.     

沉淀法制备CeO2超微粉末

采用过氧化氢－－氨水沉淀法在较低温度下制备ＣｅＯ２超微粉末。试验表明，溶液起始浓度及焙烧温度以形成粉素晶体粒径有一定影响。焙烧温度在２２０－８５０℃，所得ＣｅＯ２微粉均为立方晶系，透射电测试表明，粒子基本呈球形，晶体平均粒径随焙烧温度升高而增大。控制适当条件，可制得粒径范围在５－１３ｎｍ，比表面积１１１．８ｍ＾２／ｇ的ＣｅＯ２超微粉末。     

K2NiF4型结构的A2－xSrxBO4(A＝La, Dy, B＝Mn, Fe, Co, Ni)希土复合氧化物的合成

以典型的轻希土镧和重希土镝及碱土金属锶作为Ａ位离子，以过渡金属锰、铁、钴、镍作为Ｂ位离子，合成了Ｋ２ＮｉＦ４型结构的Ａ２－ｘＳｒｘＢＯ４希土复合氧化物，采用粉末Ｘ射线衍射技术考察了反应条件等因素对生成Ｋ２ＮｉＦ４型四方（Ｔ）结构上析影响，实现结果表明，四方结构的形成不仅与几何因素有关，而且与各组分的物理化学性质有关。各个不同的组成，生成四方相的温度范围也有所不同。适当地提高反应温度以及延长灼烧时间     

钢中Si、Mn的电子探针定量分析与标样

采用特制的Fe-Si、Fe-Mn合金系列标样，用电子探针测定了钢或铁基合金中低含量的Si和Mn元素、与用纯元素作标样、经ZAF修正的结果相比较，提高了分析准确度．     

纳米二氧化锆制备过程的DSC、TGA和XRD研究

用ＤＳＣ、ＴＧＡ和ＸＲＤ技术研究了在沉淀法制备纳米ＺｒＯ２的过程中，残留ＮＨ４Ｃｌ、ｐＨ值、滴加方式、以及结构稳定剂Ｙ２Ｏ３的添加量对结晶过程的影响。结果表明，残留ＮＨ４Ｃｌ使结晶化温度降低，使放热过程变为吸热过程。而ｐＨ值、滴加方式和结构稳定剂的添加对结晶过程无明显影响。     

乳化法—火焰原子吸收光谱法测定奶粉中的锌

用乳化剂ＯＰ将奶粉乳化成稳定的乳浊液，喷入空气－乙炔火焰中，以标准加入法测定锌，测定结果与灰化法一致，方法简便，准确。     

杂氮硅三环成环反应的研究

本文报导了与硅原子直接相连的有机基团(R)对杂氮硅三环成环速率的影响。利用气相色谱检测成环反应的产物之一——乙醇的生成速率和数量,并同与硅相连的R基团对成环反应速率的影响作比较。实验结果表明五种杂氮硅三环成环速度顺序为Cl_2CH—>ClCH_2—>ClCH_2CH_2CH_2—>CH_2=CH—>CH_3—,这与理论推断相符。