Study of a 4H-SiC epitaxial n-channel MOSFET

Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.     

Mobility of large clusters on a semiconductor surface:Kinetic Monte Carlo simulation results

The mobility of clusters on a semiconductor surface for various values of cluster size is studied as a function of temperature by kinetic Monte Carlo method. The cluster resides on the surface of a square grid. Kinetic processes such as the diffusion of single particles on the surface, their attachment and detachment to/from clusters, diffusion of particles along cluster edges are considered. The clusters considered in this study consist of 150–6000 atoms per cluster on average.A statistical probability of motion to each direction is assigned to each particle where a particle with four nearest neighbors is assumed to be immobile. The mobility of a cluster is found from the root mean square displacement of the center of mass of the cluster as a function of time. It is found that the diffusion coefficient of clusters goes as D = A(T)Nαwhere N is the average number of particles in the cluster, A(T) is a temperature-dependent constant and α is a parameter with a value of about-0.64 α -0.75. The value of α is found to be independent of cluster sizes and temperature values(170–220 K)considered in this study. As the diffusion along the perimeter of the cluster becomes prohibitive, the exponent approaches a value of-0.5. The diffusion coefficient is found to change by one order of magnitude as a function of cluster size.     

高电子迁移率晶体管放大器高功率微波损伤机理

在TCAD半导体仿真环境中,建立了0.25 m栅长的AlGaAs/InGaAs高电子迁移率晶体管(HEMT)低噪声放大器与微波脉冲作用的仿真模型,基于器件内部的电场强度、电流密度和温度分布的变化,研究了1 GHz的微波从栅极和漏极注入的损伤机理。研究结果表明,从栅极注入约40.1 dBm的微波时,HEMT内部峰值温度随着时间的变化振荡上升,最终使得器件失效,栅下靠源侧电流通道和强电场的同时存在使得该位置最容易损伤;从漏极注入微波时,注入功率的高低会使器件内部出现不同的响应过程,注入功率存在一个临界值,高于该值,器件有可能在第一个周期内损伤,损伤位置均在漏极附近。在1 GHz的微波作用下,漏极注入比栅极注入更难损伤。     

广西黑青色阳起石玉振动光谱特征研究

选取产自广西大化瑶族自治县岩滩镇的黑青色阳起石玉为研究对象,采用电子探针、傅里叶变换红外光谱仪和激光拉曼光谱仪就其化学成分和振动光谱特征进行测试分析,并对小半径金属阳离子在阳起石晶体结构中的占位情况予以讨论。结果表明,广西黑青色阳起石玉的主要矿物组成为富铁阳起石,并含有少量铁阳起石;化学成分中的高含量FeO_T(Wt%：18.596%~26.791%)是导致其折射率值(1.64)、密度值(3.12 g·cm-3)偏高且在自然光下呈黑色、透射光下呈绿色的主要原因。受晶体结构中Fe2+对Mg2+的类质同象替代作用影响,广西黑青色阳起石玉1 400~400 cm-1范围内的红外吸收谱带与100~1 200 cm-1范围内的拉曼谱峰位置较透闪石向低频区发生偏移,频差不等;且中红外、近红外吸收光谱和拉曼光谱中均可见四个(MgMgMg)OH(A带),(MgMgFe2+)OH(B带),(MgFe2+Fe2+)OH(C带)和(Fe2+Fe2+Fe2+)OH(D带)振动谱带,其中基频振动谱带分别位于3 674,3 660,3 644和3 625 cm-1附近,倍频振动谱带分别位于7 183,7 154,7 118和7 077 cm-1附近,相对强度为A＜D＜B＜C。化学成分和M-OH红外振动谱带积分面积计算结果显示广西黑青色阳起石玉晶体结构中Mg2+优先占据M₂位置,Fe2+优先占据M₁位置;Mg2+和Fe2+在M₁和M₃位置上的分布相对有序,占位系数接近于1。综合分析认为广西黑青色阳起石玉的变质程度属绿片岩相范畴。     

应用ICP-MS测定城市道路尘土中铂族元素

自然条件下,铂族元素(PGEs)一直被认为是表生条件下的痕量元素。但是,随着铂族元素在机动车排放催化剂及其他方面的广泛使用,最终导致Pt,Pd,Rh会排放到环境中。目前,铂族元素在环境中存在一定程度的积累现象,机动车尾气催化转换器被认为是其污染的主要来源。为研究北京市城区内道路尘土铂族元素的污染状况,于2010年11月采集了北京市内大型居民社区内的道路尘土样品。样品先经王水热消解以及阳离子交换树脂(Dowex AG50W-X8)分离纯化后,采用电感耦合等离子体质谱仪(ICP-MS)分析了道路尘土样品中三种铂族元素(铂(Pt)、钯(Pd)和铑(Rh))的浓度。结果表明：北京城区内居民社区道路尘土中Pd,Pt和Rh的含量范围分别为：14.20～161.80,9.39～70.80和3.18～17.05 ng·g-1,其平均浓度分别为50.76,23.82和7.54 ng·g-1,高于北京市土壤背景值, 说明北京城市居民社区内道路尘土中PGEs已经有了一定程度的富集。其中,Pd,Pt和Rh分别高于北京土壤背景值约49.8,32.6和5.1倍。为了定量评价道路尘土中PGEs的污染状况,采用地积累指数法对北京市道路尘土进行了评价。地积累指数法评价结果发现：大型居民社区内道路尘土中PGEs污染程度由强至弱的顺序依次为：Pd＞Pt＞Rh,总体而言,北京城区内大型居民社区内道路尘土存在较为明显的PGEs污染。     

Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material

A novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO₂ (300 nm) was thermally grown on p-Si wafer at 1000 °C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (μ_FET), excellent on/off ratio (I_on/I_off), high transconductance (g_m) and a small threshold voltage (V_Th). The values of μ_FET, I_on/I_off, g_m and V_Th were found as 5.02 cm²/Vs, 0.7 × 10³, 5.64 μS/mm and 1.37 V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future.     

GaN基HEMT器件的缺陷研究综述

GaN基高电子迁移率晶体管(HEMT)因具有高输出功率密度、高工作频率、高工作温度等优良特性,在高频大功率等领域具有广泛应用前景。目前,HEMT器件在材料生长和工艺制备方面都取得了巨大的进步。但是,由缺陷产生的陷阱效应一直是限制其发展的重要原因。本文首先论述了HEMT器件中的表面态、界面缺陷和体缺陷所在位置及其产生的原因。然后,阐述了由陷阱效应引起的器件电流崩塌、栅延迟、漏延迟、Kink效应等现象,从器件结构设计和工艺设计角度,总结提出了改善缺陷相关问题的主要措施,其中着重总结了器件盖帽层、表面处理、钝化层和场板结构4个方面的最新研究进展。最后,探索了GaN基HEMT器件在缺陷相关问题上的未来优化方向。     

电子辐照条件下初始电位对介质材料表面电位衰减特性的影响

为了研究航天器介质材料表面不同电位初始值对表面电位衰减特性的影响。利用航天器带电地面模拟实验设备对聚酰亚胺和聚四氟乙烯介质材料充电到不同电位值,然后关闭电子枪,用电位计测量介质材料表面电位的衰减曲线,并从理论上对cross-over现象进行分析。介质材料初始电位值越大,则表面电位衰减速度越快,且在一定的时间段内电位衰减效率随初始电位值的增大而变大;在相同的真空度条件下,对于初始电位值之和相等的两组衰减曲线,初始电位值之间差值较小的一组衰减曲线更容易出现cross-over现象;出现cross-over现象的时间和电子的迁移率相关,对于相同的两个初始电位,迁移率越大的材料则出现cross-over现象的时间越短,电位衰减会更快。航天器介质材料表面充电电位越大则衰减速度越快,在一定时间的衰减效率越高。     

Low temperature transport properties of thin SOI MOSFETs

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (t_SOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above 16.5 nm is 1.9 m²/V s. The set of devices with thinnest channel (t_SOI=10–15 nm) suggest that the peak mobility decreases with decreasing t_SOI.