The improvement of corrosion resistance of Ce conversion films on aluminum alloy by phosphate post-treatment

A phosphate post-treatment process for Ce conversion film on aluminum was studied. SEM (scanning electronic microscope), XPS (X-ray photoelectron spectroscopy) and electrochemical measurements were used to characterize the properties of the films. After the post-treatment the micro-cracks on the film surface obviously diminished, and corrosion resistance of the conversion film in NaCl solution increased. The conversion film, without post-treatment, was mainly composed of hydrated cerium oxides, and the dehydration of the film may cause cracking of the films. After phosphate treatment, stable cerium phosphate CePO₄ was formed on the surface, and the content of crystal water decreased greatly, leading to improvement of the film performance with less micro-cracks.     

Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

The irreversibility field (Hirr) of Y-based superconductor is much higher than that of Bi-based superconductor. Y-based superconductor is capable of maintaining stable electrical currents in high magnetic field and electric field, so it is a better suited mate-rial for electric-current applications. Commonly, the Y-based tapes comprise a YBCO thick film deposited on a flexible substrate, typically with an intermediate buffer layer, and an overcoat of noble metal. In this process, the interm…     

Structural and optical properties of nanocrystalline ZnO thin films synthesized by the citrate precursor route

Nanocrystalline zinc oxide (ZnO) thin films have been deposited by spin-coating polymeric precursors synthesized by the citrate precursor route using ethylene glycol and citric acid as chelating agents. The ZnO thin films were annealed in air at different temperatures for 10 min. The films were characterized by different structural and optical techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmission spectroscopy, and photoluminescence (PL). The thermal decomposition of polymeric precursor was studied by thermogravimetric analysis (TGA). XRD analysis with grazing incidence and rocking curves indicate that the ZnO films are polycrystalline with preferential orientation along the c-axis direction with a full-width at half-maximum (FWHM) of 0.31° for 600 °C-annealed samples. On annealing, the texturing in films increased along with a decrease in FWHM. AFM micrographs illustrate that the ZnO films are crack-free with well-dispersed homogeneous and uniformly distributed spherical morphology. The synthesized ZnO thin films have transparency >85% in the visible region exhibiting band edge at 375 nm, which becomes sharper with anneal. Room temperature PL spectra of these films show strong ultraviolet (UV) emission around 392 nm with an increase in intensity with annealing temperature, attributed to grain growth. Deconvolution of the PL spectra reveals that there is coupling of free excitons with higher orders of longitudinal optical (LO) phonon replicas leading to a broad asymmetric near-band-edge peak.     

Shape transformation transitions in a model of fixed-connectivity surfaces supported by skeletons

A compartmentalized surface model of Nambu and Goto is studied on triangulated spherical surfaces by using the canonical Monte Carlo simulation technique. One-dimensional bending energy is defined on the skeletons and at the junctions, and the mechanical strength of the surface is supplied by the one-dimensional bending energy defined on the skeletons and junctions. The compartment size is characterized by the total number L^′ of bonds between the two-neighboring junctions and is assumed to have values in the range from L^′ = 2 to L^′ = 8 in the simulations, while that of the previously reported model is characterized by L^′ = 1, where all vertices of the triangulated surface are the junctions. Therefore, the model in this paper is considered to be an extension of the previous model in the sense that the previous model is obtained from the model in this paper in the limit of L^′↦1. The model in this paper is identical to the Nambu-Goto surface model without curvature energies in the limit of L^′↦∞ and hence is expected to be ill-defined at sufficiently large L^′. One remarkable result obtained in this paper is that the model has a well-defined smooth phase even at relatively large L^′ just as the previous model of L^′↦ 1. It is also remarkable that the fluctuations of surface in the smooth phase are crucially dependent on L^′; we can see no surface fluctuation when L^′≤ 2, while relatively large fluctuations are seen when L^′≥ 3.     

Structural and optoelectronic properties of amorphous GaN thin films

Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N ₂ as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E _g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E ₀ and the dispersion energy E _d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E _a = 0:434 eV.     

Direct angle resolved photoemission spectroscopy and superconductivity of strained high-T c films

Since 1997 we systematically perform direct angle resolved photoemission spectroscopy (ARPES) on in-situ grown thin (<30 nm) cuprate films. Specifically, we probe low-energy electronic structure and properties of high-T _c superconductors (HTSC) under different degrees of epitaxial (compressive vs. tensile) strain. In overdoped and underdoped in-plane compressed (the strain is induced by the choice of substrate) ≈15 nm thin La_{2 − x} Sr _x CuO₄ (LSCO) films we almost double T _c to 40 K, from 20 K and 24 K, respectively. Yet the Fermi surface (FS) remains essentially two-dimensional. In contrast, ARPES data under tensile strain exhibit the dispersion that is three-dimensional, yet T _c drastically decreases. It seems that the in-plane compressive strain tends to push the apical oxygen far away from the CuO₂ plane, enhances the two-dimensional character of the dispersion and increases T _c, while the tensile strain acts in the opposite direction and the resulting dispersion is three-dimensional. We have established the shape of the FS for both cases, and all our data are consistent with other ongoing studies, like EXAFS. As the actual lattice of cuprates is like a ‘Napoleon-cake’, i.e. rigid CuO₂ planes alternating with softer ‘reservoir’, that distort differently under strain, our data rule out all oversimplified two-dimensional (rigid lattice) mean field models. The work is still in progress on optimized La-doped Bi-2201 films with enhanced T _c.      

Photothermally controlled 50 mA gating in VO2-based planar device using NIR laser diode

By utilizing a near infrared laser diode as an excitation light source, we demonstrated a photothermally controlled current gating of 50 mA in a two-terminal planar device based on a vanadium dioxide (VO₂) thin film grown by a pulsed laser deposition method. The photothermally controlled on/off triggering of the device current was accomplished by controlling the output power of the laser beam that illuminated the VO₂ film. The transient responses of photothermally triggered currents were analyzed when periodical laser pulses from the laser diode stimulated the VO₂ device at a variety of pulse widths and repetition rates. A switching contrast between off-state and on-state currents was evaluated as ∼11905, and average rising and falling times were measured as ∼45 and ∼19 ms, respectively.     

Improving the gas barrier,mechanical and thermal properties of poly(vinyl alcohol) with molybdenum disulfide nanosheets

New multifunctional materials with both high structural and gas barrier performances are important for a range of applications. Herein we present a one‐step mechanochemical process to prepare molybdenum disulfide (MoS₂) nanosheets with hydroxy functional groups that can simultaneously improve mechanical strength, thermal conductivity, and gas permittivity of a polymer composite. By homogeneously incorporating these functionalized MoS₂ nanosheets at low loading of less than 1 vol %, a poly(vinyl alcohol) (PVA) polymer exhibits elongation at break of 154%, toughness of 82 MJ/m³, and in‐plane thermal conductivity of 2.31 W/m K. Furthermore, this composite exhibits significant gas barrier performance, reducing the permeability of helium by 95%. Under fire condition, the MoS₂ nanosheets form thermally stable char, thus enhancing the material's resistance to fire. Hydrogen bonding has been identified as the main interaction mechanism between the nanofillers and the polymer matrix. The present results suggest that the PVA composite reinforced with 2D layered nanomaterial offers great potentials in packaging and fire retardant applications. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 406–414     

Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation

The efficient passivation of in situ NH₃-plasma pre-treatment and its regulation of the band alignment between HfO₂ and 4H-SiC have been investigated by XPS. With in situ NH₃-plasma passivation by PEALD, a VBO of 0.72 eV and a CBO of 1.54 eV can be obtained across the HfO₂/4H-SiC interface. The Si-O bonds components reduction in the passivated interface layers will lead to band bending or band shift at the interface and regulate the band alignments between HfO₂ and 4H-SiC. The physical mechanism investigation of band alignments can be a cornerstone for the application of HfO₂/4H-SiC heterojunctions in the high-power devices.