偏振成像探测技术发展现状及关键技术

考虑偏振成像探测技术在目标探测中具有独特优势,本文介绍了偏振成像探测技术的概念,概括了国外偏振成像探测技术的研究历程和发展现状。基于上述描述,针对偏振成像探测的关键技术进行了深入的讨论,包括目标偏振特性、信道环境下的偏振传输特性和偏振成像目标全偏振图像的获取等。最后总结了该研究领域存在的主要问题,归纳了偏振成像探测技术的发展趋势。     

随机反应扩散格气模型上钙动力学的粗粒化模拟

发展了一种基于随机格气模型的粗粒化方法,该方法能有效模拟内质网表面钙动力学信息. 首先将相邻的微观节点合并成粗粒化节点,再根据局域平均场近似推导出粗粒化反应速率,然后执行粗粒化动力学蒙特卡洛模拟. 发现粗粒化动力学蒙特卡洛模拟结果和微观模拟结果非常吻合. 有趣的是,存在一个最佳的粗粒化比m,使得粗粒化模拟与微观模拟的相变点偏差最小. 固定m,发现临界点随体系尺度增加而单调增加,而且相变点的偏差与体系尺度存在一个标度关系.此外,该粗粒化方法大大地加快了蒙特卡洛模拟速率,并且与微观模拟直接相关. 该方法可以广泛用来研究体系尺度效应,而节省大量计算时间.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

一次人工触发闪电通道光谱结构分析

用无狭缝光谱仪获得了广东地区一次人工触发闪电首次回击过程的发射光谱,同时测量了回击电流峰值为18.3kA,回击持续时间为4.5ms。发现导线部分通道的发射谱线中存在407.5,419.0,425.3和517.9nm等激发能比较高的谱线,具有强闪电通道发射光谱的谱线结构,空气部分则具有弱闪电通道的谱线结构;导线部分与空气部分的基本谱线的相对强度差别较小,强闪电特征谱线相对强度相差非常大。通过对导线部分与空气部分谱线激发能等参数的分析,发现回击开始时,导线部分先导通道还未完全消失,回击脉冲电流对先导闪电通道等离子体进行了进一步激发,增加了等离子体的温度和密度,使得导线部分具有较高激发能的谱线被完全激发,相对于空气部分407.5,419.0,425.3和517.9nm等谱线的强度有较大程度的增加,造成导线部分通道与空气通道两种不同的光谱结构。通过光谱分析,获得了闪电通道不同部分的温度、电子密度等参数,发现导线部分通道的辐射特性不同于空气通道是导线部分通道发光亮度与电流相关性较差的原因。     

VUV-UV excited luminescent properties of LnCa4O(BO3)3:RE (Ln=Y, La, Gd; Re=Eu, Tb, Dy, Ce)

Calcium lanthanide oxyborate doped with rare-earth ions LnCa₄O(BO₃)₃:RE³⁺ (LnCOB:RE, Ln=Y, La, Gd, RE=Eu, Tb, Dy, Ce) was synthesized by the method of solid-state reaction at high temperature. Their fluorescent spectra were measured from vacuum ultraviolet (VUV) to visible region at room temperature. Their excitation spectra all have a broadband center at about 188 nm, which is ascribed to host absorption. Using Dorenbos’ and Jφrgensen's work [P. Dorenbos, J. Lumin. 91 (2000) 91, R. Resfeld, C.K. Jφrgensen, Lasers and Excite States of Rare Earth [M], Springer, Berlin, 1977, p. 45], the position of the lowest 5d levels E(Ln,A) and charge transfer band E_ct were calculated and compared with their excitation spectra.Eu³⁺ and Tb³⁺ ions doped into LnCOB show efficient luminescence under VUV and UV irradiation. In this system, Ce³⁺ ions do not show efficient luminescence and quench the luminescence of Tb³⁺ ions when Tb³⁺ and Ce³⁺ ions are co-doped into LnCOB. GdCOB doped with Dy³⁺ shows yellowish white light under irradiation of 254 nm light for the reason that Gd³⁺ ions transfer the energy from itself to Dy³⁺. Because of the existence of Gd³⁺, the samples of GdCOB:RE³⁺ show higher excitation efficiency than LaCOB:RE³⁺ and YCOB:RE³⁺, around 188 nm, which indicates that the Gd³⁺ ions have an effect on the host absorption and can transfer the excitation energy to the luminescent center such as Tb³⁺, Dy³⁺ and Eu³⁺.     

Compton散射下超强激光等离子体通道的演化

应用多光子非线性Compton散射模型、空间动态补偿模型、非线性薛定谔方程和数值模拟方法,研究了Compton散射对超强飞秒激光等离子体中通道的影响,提出了将Compton散射光作为形成等离子体通道的新机制,给出了超强飞秒激光脉冲在等离子体中传播和电子密度随时间变化的非线性修正方程,并进行了数值模拟。并研究发现：散射使等离子体中电子密度峰值增大1个量级,半径增大1mm。激光最大功率密度被限制在1018W/m2以下,随传输距离增大缓慢衰减。传输初始阶段,单脉冲衰减能量较散射前增大2%,之后衰减较平缓。通过增加超强飞秒激光脉冲输入功率,能有效地增加电子密度峰值,有利于等离子体通道的形成。并对所的结论给出了初步物理解释。     

Solid-phase epitaxy of CaSi2 on Si(1 1 1) and the Schottky-barrier height of CaSi2/Si(1 1 1)

Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi₂ films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi₂ on Si(1 1 1) amounts to qΦ_Bn=0.25 eV on n-type and to qΦ_Bp=0.82 eV on p-type silicon.     

基于拉格朗日跟踪法的波纹流道流体特性研究

采用正交实验方法考察了具有不同结构参数的三维周期波纹流道中的流体性能,并采用Webb评价方法对其进行性能评价。比较了不同波纹宽度的波纹流道的阻力因子e_f、传热因子e_Nu和能效因子η的值,结果表明三者都随Re的增大而增大,波纹宽度最小时能效因子η最大。流体在波纹流道中垂直于主流方向的横截面上产生二次流,随着Re增大,二次流增强,阻力增大,温度边界层减薄,温度等值线分布变得不均匀,传热增强。采用拉格朗日粒子跟踪技术分析了不同Re下,流体粒子在波纹流道内的运动轨迹,绘制了不同周期出口流体粒子的庞加莱截面图,结果表明流体粒子在波纹流道中被反复拉伸和折叠,增加了流体粒子的接触面积,提高混合效率,强化了传热。     

Field-assisted spin-polarized electron transport through a single quantum well with spin-orbit coupling

We have investigated theoretically the field-driven electron transport through a single-quantum-well semiconductor heterostructure with spin-orbit coupling.The splitting of the asymmetric Fano-type resonance peaks due to the Dresselhaus spin-orbit coupling is found to be highly sensitive to the direction of the incident electron.The splitting of the Fano-type resonance induces the spin-polarization dependent electron current.The location and the line shape of the Fano-type resonance can be controlled by adjusting the energy and the direction of the incident electron,the oscillation frequency,and the amplitude of the external field.These interesting features may be used to devise tunable spin filters and realize pure spin transmission currents.     

水平槽道内湍流变动的PTV实验研究

本文采用PIV测量技术研究充分发展水平槽道内的两相湍流的变动规律(Re=590)。首先将单相湍流的测量结果与文献中DNS的结果进行了比较,证明了PIV测量湍流脉动的可行性,并通过引入PTV算法获得了近壁对数边界层内的湍流量。对两相流动的测量结果表明,即使在1％的低颗粒质量载荷下,气体湍流已有明显的变动,并且壁面附近和槽道中心的变动规律不同。