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41.
《Electroanalysis》2006,18(6):595-604
The following two numerical models have been applied to zinc cations electroreduction in 1 M NaClO4 water solution: a classical EE model describing the concentration of involved species in solution (semi infinitive diffusion region), an extended EE model describing both: the concentration of involved species in solution and the concentration of metallic zinc inside mercury drop (in limited area of diffusion). In the latter model the inner part of mercury drop and surrounding solution were treated as dynamic interrelated system. Both models were applied to experimental cyclic voltammetric CV data in 1 M NaClO4, the results compared and discussed. The concentration profiles of all species including metallic zinc inside mercury drop were performed. The presented integrated model is essential for theoretical and analytical aspects of the electrochemistry of mercury soluble metal cations and amalgams. 相似文献
42.
超强脉冲激光在低密度等离子体中的相对论自导引效应 总被引:1,自引:1,他引:0
分析了相对论条件下激光超短脉冲在等离子体中的传输特性 ,在傍轴近似和慢变振幅近似条件下 ,推导了折射率、电子密度、静电场以及电子空腔尺度的表达式。当激光功率超过产生自导引阈值功率时 ,激光束斑沿着传输光轴方向振荡。在有质动力产生的压力非常强时 ,聚焦光束中央部分的电子被全部排开形成电子空腔。给出了电子空腔的尺寸以及在出现电子空腔时的处理方法。在超过形成电子空腔的阈值功率 (Pc≈ 2 .5TW )时 ,空腔的尺度几乎与激光功率无关 ,这意味着电子空腔阻止了激光脉冲的进一步聚焦。 相似文献
43.
A new method for controlling the quantum coherence of atom laser by applying input light with strong strength is presented
within the framework of quantum dynamical theory. Unlike the case of rotating wave approximation(RWA), we show that the non-classical
properties, such as sub-Poisson distribution and quadrature squeezed effect, can appear in the output atom laser beam with
time. By choosing suitable initial RF phase, a steady and brighter output of squeezed coherent atom laser is also available. 相似文献
44.
通过固相反应法制备了Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的样品,并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现,在可见光范围内有3个强的发光带,一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带,分别对应于Er3+离子的以下辐射跃迁:4F9/2→4I15/2、4S3/2→4I15/2、2H11/2→4I15/2.其中又以Er3+离子的4F9/2→4I15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析,发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测,发现ZrO2主要以立方相为主,并且计算得到了这种立方结构的晶格常数.Al2O3固溶于ZrO2中,Al3+嵌入ZrO2后产生氧空位,导致ZrO2晶体的对称性降低,这种结构变化更有利于提高上转换效率,即上转换发光强度增强. 相似文献
45.
使用SAC/SAC-CI方法,利用D95(d),6-311g**以及cc-PVTZ等基组,对B2分子的基态(X3Σg-)和第一激发态(A3Σu-)的平衡结构和谐振频率进行了优化计算.通过对3个基组的计算结果的比较,得出了D95(d)基组为3个基组中的最优基组的结论;使用D95(d)基组,利用SAC的GSUM(Group Sum of Operators)方法对基态(X3Σg-),SAC-CI的GSUM方法对激发态(A3Σu-)进行单点能扫描计算,用正规方程组拟合Murrell-Sorbie函数,得到了相应电子态的完整势能函数;从得到的势能函数计算了与基态(X3Σg-)和第一激发态(A3Σu-)相对应的光谱常数(Be,αe,ωe和ωeχe),结果与实验数据吻合. 相似文献
46.
47.
在长距离无线光通信中,接收点光功率密度与光束发散角平方呈反比关系,为了获得小的发散角和大的功率耦合效率,要求准直系统有较大的数值孔径(NA),但数值孔径过大会增加像差,因此合理设计功率耦合效率与准直系统的数值孔径就非常重要。该文对半导体激光器光束准直系统中功率耦合效率进行了研究,给出了半导体激光器光束功率耦合效率与k(孔径半径与孔径处等效光束半径之比)的关系表达式,并结合激光器光束准直系统,给出了半导体激光器光束功率耦合效率与准直系统数值孔径的关系表达式。该研究结论对于半导体激光器光束准直系统设计具有参考作用。 相似文献
48.
More than 250 rotationally resolved vibrational bands of the A2B2-X2A1 electronic transition of 15NO2 have been observed in the 14 300-18 000 cm−1 range. The bands have been recorded in a recently constructed setup designed for high resolution spectroscopy of jet cooled molecules by combining time gated fluorescence spectroscopy and molecular beam techniques. The majority of the observed bands has been rotationally assigned and can be identified as transitions starting from the vibrational ground state or from vibrationally excited (hot band) states. An exceptionally strong band is located at 14 851 cm−1 and studied in more detail as a typical benchmark transition to monitor 15NO2 in atmospheric remote sensing experiments. Standard rotational fit routines provide band origins, rotational and spin rotation constants. A subset of 177 vibronic levels of 2B2 vibronic symmetry has been analyzed in the energy range between 14 300 and 17 250 cm−1, in terms of integrated density and using Next Neighbor Distribution. It is found that the overall statistical properties and polyad structure of 15NO2 are comparable to those of 14NO2 but that the internal structures of the polyads are completely different. This is a direct consequence of the X2A1-A2B2 vibronic mixing. 相似文献
49.
V. I. Dashkevich 《Journal of Applied Spectroscopy》2002,69(6):862-870
Based on a semiclassical theory, investigations were made of the dynamics and spectral composition of pulsed generation with self-injection of priming radiation from the active part of a three-mirror linear resonator, the passive part of which contains an active loss modulator and serves as the output reflector of the laser. It is shown that there exists a range of resonator parameters at which pulsed lasing has virtually a single frequency irrespective of the detuning of the frequencies of the priming radiation and of the nearest eigenmode of the composite resonator. Considering graphically the phase conditions of generation, it is established that among pulsed lasers with self-injection of priming radiation which are constructed on the basis of three-mirror linear and branched resonators, the most efficient for creating single-frequency generation are those in which the length of the main resonator, where generation of the pulse occurs, is larger than the length of the additional one intended for forming the priming radiation. With an inverse ratio of the lengths of the resonators, the conditions of single-frequency pulsed generation becomes dependent on the priming radiation frequency. 相似文献
50.
Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi2 films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi2 on Si(1 1 1) amounts to qΦBn=0.25 eV on n-type and to qΦBp=0.82 eV on p-type silicon. 相似文献