ELECTROCHEMICAL COPOLYMERIZATION OF DIBENZOFURAN AND 3-METHYLTHIOPHENE IN BORON TRIFLUORIDE DIETHYL ETHERATE

The copolymerization of dibenzofuran(DBF)and 3-methylthiophene(MET)was successfully achieved electrochemically by direct anodic oxidation of the monomer mixtures in boron trifluoride diethyl etherate.The effects of applied polymerization potential and the monomer concentration ratios on the copolymerization were investigated by linear sweep voltammetry and cyclic voltammetry(CV).The structure of copolymer films were investigated by UV-Vis,infrared spectroscopy,thermal analysis.As-formed novel copolymers ...     

Ti对铸造镍基高温合金中碳化物和拓扑密排相影响

采用光学显微镜、扫描电子显微镜和透射电子显微镜等测试技术,研究了经过标准热处理和时效处理后的不同Ti含量合金的微观组织。 研究发现,标准热处理后不同Ti含量合金的相组成相同,主要由γ、γ′、MC和M23C6型碳化物组成;随着Ti含量增加,合金组织中的碳化物数量逐渐增加。 不含Ti的合金中的MC碳化物的组成主要是TaC,而含Ti合金中MC型碳化物组成为(Ta,Ti)C,并且随着Ti含量增加,MC碳化物中M组成元素Ta和Ti的比值（Ta/Ti）逐渐减小。 通过研究900 ℃不同时间时效处理后合金微观组织发现,随着Ti含量增加,合金中拓扑密排相(TCP)析出趋势逐渐增加。 含质量分数2.7%Ti的合金经900 ℃/500 h时效处理后,组织中析出了针状富含Cr、W和Mo的σ相。 这表明要保证合金具有良好的组织稳定性,需要控制合金中Ti的加入量。     

新型酰乙基葡甲胺树脂的合成及吸硼性能

采用一步法, 用氯乙酰化聚苯乙烯树脂(PS-Acyl-Cl)与葡甲胺反应制得一种同时含有α-酰乙基胺和邻羟基双官能团的新型酰乙基葡甲胺树脂, 考察了溶液pH值、 温度、 初始浓度和吸附时间对酰乙基葡甲胺树脂吸附硼的影响. 结果表明, 在实验浓度范围内, 该树脂对硼的吸附符合Langmuir方程, 最大吸附量约为28.1 mg/g干树脂, 优于氯甲基树脂制得的硼特效树脂. 表明α-酰乙基胺和邻羟基双官能团对硼有双重或协同吸附作用. 该树脂在pH=6.0时对硼的吸附量最大; 温度对树脂吸附的影响不大; 树脂解吸率大于96%; 树脂重复使用5次后吸附量基本不变. 动力学研究结果表明, 吸附过程为液膜扩散控制过程.     

熔盐电解SiO2/C直接制备SiC纳米线

采用纳米SiO₂和酚醛树脂为原料制备酚醛树脂裂解碳纳米SiO₂复合阴极(硅碳物质的量的比为1:1),直接电解PFC/SiO₂复合阴极,在900℃熔融盐CaCl₂中,恒槽压2.0V下电解,制备出碳化硅纳米线。采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)及其附带的能谱仪、X射线分析衍射仪(XRD)和拉曼光谱(Raman)对产物的组成、形貌、微观结构等进行了表征。结果表明:碳化硅纳米线呈立方晶体结构,其直径为4~13nm,长可达数微米;室温下该纳米线在415nm和534nm附近有宽的发光峰。最后,讨论了碳化硅纳米线的生成机制。     

富缺陷BN负载的高分散Cu催化乙醇脱氢制乙醛

生物乙醇作为平台分子通过催化转化的方法可以制备烯烃、乙醛、丁醇和芳香化学品等,其中乙醛是生产乙酸、季戊四醇、三氯乙醛、山梨酸等重要化学品的原料.随着乙醛的需求量逐年增加,发展以乙醇直接脱氢生成乙醛的工艺,具有联产氢气、原子经济性高、产物易分离的优点,符合国际绿色低碳发展战略要求,有望替代当前乙烯氧化法生产工艺.乙醇分子...     

轧辊用高钒高速钢的滚-滑动磨损性能及失效行为研究

在高应力滚-滑动(滑动率约10%)条件下,利用自制的磨损试验机研究了高钒高速钢的磨损性能,并利用电子显微镜分析了失效行为.结果表明:高钒高速钢的相对耐磨性是高铬铸铁(Cr20)的2倍以上.磨损失效形式为显微切削与疲劳剥落的复合,兼有碳化物碎裂.碳化物对磨损失效有重要作用,高铬铸铁中的杆状M7C3型碳化物易于弯曲、碎裂而在其内部形成大量裂纹,促进磨损表面产生大块的疲劳剥落;高钒高速钢中团块状VC硬度高、形态好、具有精细亚结构、不易碎裂,可有效地抵御显微切削和疲劳剥落,是高钒高速钢耐磨性优良的原因.     

Structural and electronic properties of graphite layers grown on SiC(0 0 0 1)

Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?_B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate.     

Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

In this paper, the viability of using a genetic algorithm to find band structure parameters for empirical pseudopotential method (EPM) calculations is demonstrated by applying a genetic algorithm to find the EPM parameters for 4H-SiC. The form of the pseudopotential for 4H-SiC and the 19 form factors found by the genetic algorithm to fit the band structure to experimentally measured indirect energy gap and direct optical gaps are given. In addition, the effective masses for the conduction band minimum are extracted from the calculated band structure. It is shown that the genetic algorithm provides an effective, automated way to find parameters that give reasonably good fits to both the band gaps and the effective masses simultaneously.     

Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2.     

间接原子吸收光谱法测定水样中的痕量硼

本文研究了四氟硼酸根与邻二氮菲银形成的络合物由MIBK萃取后,用火焰原子吸收光谱法间接测定硼,其线性范围为0.002-1μg/mL,检出限为0.41μg/mL,回收率为93%-101%,且K^ 、Na^ 等10个种离子不干扰测定,本方法用于地下水中痕量硼的测定,结果令人满意。