B12N12纳米笼：潜在的二氧化氮检测传感器

利用密度泛函理论通过计算吸附能量、HOMO/LUMO能隙变化、电荷转移、结构扭曲等研究二氧化氮分子在B12N12纳米笼的吸附．此外,通过计算B₁₂N₁₂的电子结合能、Gibbs自由能、态密度和分子表面的静电势研究其稳定性和其它特性．B₁₂N₁₂纳米笼吸附二氧化氮显示三种构型．B₁₂N₁₂团簇的HOMO/LUMO能隙变化对二氧化氮分子的存在非常敏感,从自由团簇的6.84 eV降为NO₂/团簇稳定团簇的3.23 eV．团簇的导电性被极大地提高,表明B₁₂N₁₂纳米簇可能是潜在的二氧化氮气体分子检测传感器.     

Preparation of the Ni-P composite coating co-deposited by nano TiC particles and evaluation of it's corrosion property

In current research, low carbon steel plates were coated by Ni-P electroless method. The effect of adding different concentrations (ranging from 0.01 g/l to 0.5 g/l) of TiC nano-sized particles to the plating bath on deposition rate, surface morphology and corrosion behavior of Ni-P-TiC composite coatings were investigated. The surface morphology and the relevant structure were evaluated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Corrosion behavior of the coated steel was evaluated by electrochemical impedance spectroscopy (EIS) and polarization techniques. The results showed that addition of TiC nano-particles to Ni-P electroless bath not only changes the surface morphology of Ni-P coating, but also improves corrosion resistance of the steel in comparison with TiC free Ni-P electroless coating. In addition, the deposition rate of coating was also affected by incorporation of TiC particles. It was also found that improvement in corrosion resistance largely depends on the phosphorous and TiC concentrations on the coatings.     

BNCT蒙特卡洛剂量计算的混合网格算法研究

在硼中子俘获治疗(BNCT)的蒙特卡洛(MC)剂量计算中,通常使用单一的网格模式,如16mm,8mm,4mm.使用细网格计算资源太大,使用粗网格,计算精度不够,为此,根据粒子穿透深度和计数量的变化梯度,采用混合网格模拟计算,达到了细网格的精度,时间仅为细网格的37%.     

Continuum model for low-frequency phonons of boron nitride nanotubes

A continuum model is employed to calculate the low-frequency phonons of boron nitride nanotubes. We find an excellent agreement of the optically active modes calculated within this approach and those from more elaborate calculations within an energy and wavelength window that can be established beforehand, from the choice of the bulk input parameters. We verify that this model describes correctly the dependence of radial breathing mode with the radius, the existence of parabolic modes at small wavevectors, and other general characteristics of the dispersion relations of these systems.     

SiC表面电磁模态及其非线性优化

基于特殊的SiC周期性结构,理论分析了SiC表面特殊电磁模态的激发特性,并利用数值模拟的方法研究了该周期性结构的红外辐射/吸收特性。模拟结果表明该周期性结构在电磁波照射下可以支持多种电磁模态的激发,并且多种电磁模态之间存在相互耦合现象,证实了理论分析的结果。基于非线性优化算法,分别对结构在单个频率整个角度范围内的红外辐射/吸收特性,以及整个研究频段内的垂直方向红外辐射/吸收特性进行了优化。优化的结果显示,相比于原来的结构,优化后结构的等效发射率/吸收率有较显著地提升。     

Influence of iron-subgroup metals on the atomization of silicon in a graphite furnace

The regime of atomization of Si in the presence of Fe-subgroup metals was investigated with the use of a “Saturn” spectrophotometer and a “Graphit-2” electrothermic atomizer. The optimal operating parameters of the atomizer have been determined. It was established that the optimal value of the ashing and the atomization temperatures are, respectively, 900–1000°C and 2400°C, the optimal rate of temperature rise at the stage of atomization is 1400 K/sec, and the appropriate amount of Fe, Co and Ni additions is 1–2 μg. It was established that the formation of gaseous silicides of the Fe-subgroup metals, the dissociation energies of which are lower than the dissociation energies of Si oxides and carbides, increases the sensitivity for determination of Si. To whom correspondences should be addressed. Institute of Single Crystals, National Academy of Sciences of Ukraine, 60, Lenin Ave., Khar'kov, 310001, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 153–157, March–April, 1999.     

碳化硅中点缺陷对热传导性能影响的分子动力学研究

碳化硅(SiC)由于性能优异,已广泛应用于核技术领域.在辐照环境下,载能入射粒子可使材料中的原子偏离晶体格点位置,进而产生过饱和的空位、间隙原子、错位原子等点缺陷,这些缺陷将改变材料的热物性能,劣化材料的服役性能.因此,本文利用平衡分子动力学方法(Green-Kubo方法)采用Tersoff型势函数研究了点缺陷对立方碳化硅(β-SiC或3C-SiC)热传导性能的影响规律.研究过程中考虑的点缺陷包括:Si间隙原子(Si_Ⅰ)、Si空位(Si_Ⅴ)、Si错位原子(Si_C)、C间隙原子(C_Ⅰ)、C空位(C_Ⅴ)和C错位原子(C_Si).研究结果表明,热导率(λ)随点缺陷浓度(c)的增加而减小.在研究的点缺陷浓度范围(点缺陷与格点的比例范围为0.2%—1.6%),额外热阻率(Δ_R-R_defect-R_perfect,R=1/λ,R_defect为含缺陷材料的热阻率,R_perfec...     

Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

In this paper, the viability of using a genetic algorithm to find band structure parameters for empirical pseudopotential method (EPM) calculations is demonstrated by applying a genetic algorithm to find the EPM parameters for 4H-SiC. The form of the pseudopotential for 4H-SiC and the 19 form factors found by the genetic algorithm to fit the band structure to experimentally measured indirect energy gap and direct optical gaps are given. In addition, the effective masses for the conduction band minimum are extracted from the calculated band structure. It is shown that the genetic algorithm provides an effective, automated way to find parameters that give reasonably good fits to both the band gaps and the effective masses simultaneously.     

Transport properties of boron-doped single-walled silicon carbide nanotubes

The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green’s function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.     

Polymer-precursor-derived (am-) SiC/TiC composites for resistive heaters in large volume multi-anvil high pressure/high-temperature apparatus

(Amorphous-)SiC/TiC composites for resistive tubular heaters in HP/HT experiments were obtained via a polymer-precursor process. A slurry consisting of a commercial SiC-precursor polymer (allylhydridopolycarbosilane, AHPCS) and TiC powder as conductive filler was applied to the inner walls of zirconia insulation tubes, using a centrifugation-casting method. Resistive coatings with homogeneous thickness of ～200 μm were obtained. The heaters were tested in octahedral multi-anvil assemblies at ～10 GPa with simultaneous recording of heating voltage and current. Up to a maximum temperature of ～1800°C they showed temperature vs. power characteristics reproducible from batch to batch, with resistance decreasing from 0.08 to 0.02 Ω during heating. Microstructural characterization using SEM/EDX was carried out on the recovered SiC/TiC composite material, as well as on pristine resistive heaters directly after coating and curing to 230°C, and after additional pyrolysis at 900°C in argon. In all cases, a stable composite microstructure of an interpenetrating network of TiC particles with either silicon carbide polymer precursor or an amorphous SiC phase were found. The composites were characterized by XRD and thermogravimetry. Further improvement of coating procedure and materials combination (precursor/filler/insulator substrate) may result in advanced coatings, operational well beyond 2000°C.