并苯纳米环[6]CA及其衍生物的电子结构和光物理性质的密度泛函理论研究

采用密度泛函理论PBE0方法在6-31G(d, p) 基组水平上对比研究并六苯纳米环[6]CA及BN取代纳米环[6]CA-BN的几何结构及电子性质. 同时探讨锂离子掺杂对不同体系的芳香性、前线分子轨道、电子吸收光谱及传输性质的影响. 通过电离势、亲合势及重组能的计算, 预测纳米环体系得失电子的能力及传输性能. 结果表明:[6]CA的能隙很小, BN取代后, 能隙明显增大; 锂离子掺杂到两种纳米环中, 在不明显改变前线分子轨道分布的前提下, 几乎同步降低了最高占据轨道、 最低未占据轨道能级, 锂离子掺杂使载流子传输性能得到很大改善; 电子吸收光谱拟合发现, BN取代使吸收光谱很大程度蓝移, 吸收强度明显减小; 而锂离子掺杂对光谱的强度及吸收范围没有明显影响. 关键词： 碳纳米环 硼氮纳米环 锂离子掺杂 密度泛函理论     

碳掺杂硼氮纳米管电子场发射的第一性原理研究

对闭口硼氮纳米管（BNNT）顶层掺碳体系,运用第一性原理研究了电子场发射性能.结果表明,掺碳的BNNT体系电子结构变化显著;外电场愈强,体系态密度向低能端移动幅度愈大,且最高占据分子轨道（HOMO）/最低未占据分子轨道（LUMO）能隙愈小.体系态密度和局域态密度,HOMO和LUMO及其能隙分析一致表明,各种碳掺杂体系中C_eqBNNT的场发射性能最佳. 关键词： 硼氮纳米管 碳掺杂 第一性原理     

Metal-decorated defective BN nanosheets as hydrogen storage materials

Density functional theory computations were performed to investigate hydrogen adsorption in metaldecorated defective BN nanosheets. The binding energies of Ca and Sc on pristine BN nanosheets are much lower than the corresponding cohesive energies of the bulk metals; however, B vacancies in BN nanosheets enhance the binding of Ca and Sc atoms dramatically and avoid the clustering of the metal atoms on the surface of BN nanosheets. Ca and Sc strongly bind to defective BN nanosheets due to charge transfer between metal atoms and BN nanosheets. Sc-decorated BN nanosheets with B vacancies demonstrate promising hydrogen adsorption performances with a hydrogen adsorption energy of ?0.19～ ?0.35 eV/H₂.     

Structurally Diverse Boron–Nitrogen Heterocycles from an N2O23− Formazanate Ligand

Five new compounds comprised of unprecedented boron–nitrogen heterocycles have been isolated from a single reaction of a potentially tetradentate N₂O₂³⁻ formazanate ligand with BF₃⋅OEt₂ and NEt₃. Optimized yields for each product were obtained through variation of experimental conditions and rationalized in terms of relative Gibbs free energies of the products as determined by electronic structure calculations. Chemical reduction of two of these compounds resulted in the formation of a stable anion, radical anion, and diradical dianion. Structural and electronic properties of this new family of redox-active heterocycles were characterized using UV/vis absorption spectroscopy, cyclic voltammetry and X-ray crystallography.     

Poly(p‐phenylene iminoborane): A Boron–Nitrogen Analogue of Poly(p‐phenylene vinylene)

Substitution of selected CC units in π‐conjugated organic frameworks by their isoelectronic and isosteric BN units (BN/CC isosterism) has proven to be a successful concept for the development of BN‐doped polycyclic aromatic hydrocarbons (PAHs) with intriguing properties and functions. The first examples have just demonstrated the applicability of this approach to polymer chemistry. Herein, we present the synthesis and comprehensive characterization of the first poly(p‐phenylene iminoborane). This novel inorganic–organic hybrid polymer can be regarded as a BN analogue of the well‐known poly(p‐phenylene vinylene) (PPV). Photophysical investigations on the polymer and a series of model oligomers provide clear evidence of some π‐conjugation across the B=N bonds and extension of the conjugation path with increasing chain length. TD‐DFT calculations provide deeper insight into the electronic structure of the new materials.     

Fluorine-Containing Flow Modifier for BN/PPS Composites Enabled by Low Surface Energy

In this study, a fluorine-containing flow modifier (Si-DF) with low surface energy is successfully synthesized, which is applied to fabricate ideal electronic packaging materials (BN/PPS composites) with high thermal conductivity, excellent dielectric properties, processability, and toughness by conventional melt blending. Si-DPF is located at the interface between the BN fillers and the PPS matrix, which not only improves the dispersion of BN fillers but also strengthens the interaction. With the help of 5 wt% Si-DF, BN/PPS/Si-DF (70/25/5) still exhibits the high thermally conductive coefficient (3.985 W/m·K) and low dielectric constant (3.76 at 100 MHz) although BN fillers are loaded as high as 70 wt%. Moreover, the sample processes a lower stable torque value (2.5 N·m), and the area under the stress–strain curves is also increased. This work provides an efficient way to develop high-performance polymer-based composites with high thermally conductive coefficients and low dielectric constants for electronic packaging applications.     

第一性原理研究电场对BN纳米管电子结构的影响

采用基于密度泛函理论的第一性原理计算研究了电场对BN纳米管的电子结构的影响.首先对在不同电场强度下的纳米管几何结构进行了优化,可以看出纳米管沿轴方向层间距出现了不规则的变化.电子能带结构显示,在电场作用下,zigzag型和armchair型两种结构纳米管的能带向低能方向移动,并且导致纳米管的带隙有显著的减小.电场使得armchair型纳米管的带隙发生了从间接带隙向直接带隙的转变.在电场作用下,纳米管的两端态密度呈现出明显的差异,正负电荷沿轴向出现了沿轴向的空间分离,Mulliken电荷分布图揭示出最高占据轨道和最低未占据轨道分居在纳米管的两端.     

利用SLn(Fq)的BN对分解构造Cartesian认证码

In the present paper,a construction of Cartesian authentication codes by using the BN pair decomposition of special linear group is presented.Moreover,under the case that the encoding rules are chosen according to a uniform probability distribution,the probability of a successful impersonation attack and the probability of a successful substitution attack of the code are computed.     

Synthesis of boron nitride nanotubes by Argon supported Thermal Chemical Vapor Deposition

Thermal Chemical Vapor Deposition technique is modified with the use of Argon gas flow inside the chamber as an alternative for vacuum and orientation of one end closed quartz test tube. The use of Argon gas not only simplified the experimental set up, but also made it ~ 18 % cost effective compared to the conventional set up. Field Emission Scanning Electron Microscopy micrographs show straight and long BNNTs along with some cotton like morphologies. Transmission electron microscopy revealed bamboo like structure inside the tube and ~0.34 nm interlayer spacing for highly crystalline nature of boron nitride nanotubes. X-ray photon spectroscopy shows B 1s peak at 191.08 eV and N 1s peak at 398.78 eV that represents h-BN. Whereas, Raman spectrum indicates a major peak at ~1379.60 (cm⁻¹) that correspond to E_2g mode of h-BN.     

理论研究Stone-Wales缺陷和C掺杂对手性BN纳米带的带隙调控

通过第一性原理密度泛函理论的方法,研究了Stone-Wales 缺陷和C掺杂对手性BN纳米带的带隙调控.结果表明,Stone-Wales 缺陷使得BN纳米带的价带顶(VBM)和导带底(CBM)的占据态发生变化,从而引入了缺陷能级降低了带隙,但Stone-Wales 缺陷的个数对带隙的大小影响不明显.电子结构计算表明,带Stone-Wales 缺陷的BN纳米带的缺陷能级主要是由VBM附近形成N-N原子的类π键轨道和CBM附近形成B-B原子的类σ键分布决定.通过在带Stone-Wales 缺陷的BN纳米带中引入C掺杂改变杂质能级的分布,在VBM附近形成了C-C原子的类σ键轨道和CBM附近形成了C-B原子的类σ键,这样可以进一步降低BN纳米带的带隙,拓展了BN纳米带的应用.