Roots,iterations and logarithms of formal automorphisms

In this paper it is proved that having a logarithm is equivalent to having roots of arbitrary order in the group of automorphisms of a formal power series ring, and in algebraic subgroups too     

利用微悬臂梁表面应力研究聚N-异丙基丙烯酰胺分子的构象转变

提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面，用光杠杆技术检测温度在20—40℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示：在升温过程中，微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形，这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中，微悬臂梁发生了反方向的弯曲变形，这对应着PNIPA 关键词： 构象转变 聚N-异丙基丙烯酰胺分子链 表面应力 微悬臂梁     

Halogen Bonding： An AIM Analysis of the Weak Interactions

A series of complexes formed between halogen-containing molecules and ammonia have been investigated by means of the atoms in molecules （AIM） approach to gain a deeper insight into halogen bonding. The existence of the halogen bond critical points （XBCP） and the values of the electron density （Pb） and Laplacian of electron density （V2pb） at the XBCP reveal the closed-shell interactions in these complexes. Integrated atomic properties such as charge, energy, polarization moment, volume of the halogen bond donor atoms, and the corresponding changes （△） upon complexation have been calculated. The present calculations have demonstrated that the halogen bond represents different AIM properties as compared to the well-documented hydrogen bond. Both the electron density and the Laplacian of electron density at the XBCP have been shown to correlate well with the interaction energy, which indicates that the topological parameters at the XBCP can be treated as a good measure of the halogen bond strength In addition, an excellent linear relationship between the interatomic distance d（X…N） and the logarithm of Pb has been established.     

大型钢结构人行景观天桥的有限元分析

采用有限元方法对大型钢结构人行景观天桥进行了静力学、温度应力、动力学模态和初步的抗震能力分析,并就桥自重作用下的最大竖向位移和实际观测结果进行了比较,两者是一致的.计算结果表明:人行景观天桥在常规、温度极值改变和多遇地震荷载作用等多种工况下,现有的设计方案具有足够的强度、刚度和抗震能力.     

测量冷原子温度的理论与近似拟合公式的误差分析

对短程飞行时间法(tim e-of-flight,TOF)中推算冷原子温度的理论拟合公式与近似拟合公式进行了误差分析与比较。研究表明:对于使用短程飞行吸收光谱信号推测冷原子团温度,当探测光光斑半径与冷原子团高斯半径之比k小于0.2时,理论拟合公式和近似拟合公式能很好的相符,随着探测光光斑半径与冷原子团高斯半径比值的逐渐增大,用近似拟合公式所得TOF吸收信号与用理论拟合公式所得TOF吸收信号的误差也将逐渐增大,当比值为0.5时,用近似拟合公式所得TOF吸收信号的误差将增大到20%。     

Beyond Cartesian limits: Leibniz's passage from algebraic to “transcendental” mathematics

This article deals with Leibniz's reception of Descartes' “geometry.” Leibnizian mathematics was based on five fundamental notions: calculus, characteristic, art of invention, method, and freedom. On the basis of methodological considerations Leibniz criticized Descartes' restriction of geometry to objects that could be given in terms of algebraic (i.e., finite) equations: “Descartes's mind was the limit of science.” The failure of algebra to solve equations of higher degree led Leibniz to develop linear algebra, and the failure of algebra to deal with transcendental problems led him to conceive of a science of the infinite. Hence Leibniz reconstructed the mathematical corpus, created new (transcendental) notions, and redefined known notions (equality, exactness, construction), thus establishing “a veritable complement of algebra for the transcendentals”: infinite equations, i.e., infinite series, became inestimable tools of mathematical research.     

Expandable network and covering properties for uniform Eberlein compacta

In this paper we characterize the class of uniform Eberlein compact spaces through a network condition and also in terms of covering properties for the square of the space.     

A Positive Doubly Power Bounded Operator with a Nonpositive Inverse Exists on any Infinite-dimensional AL-Space

In this paper we construct a positive doubly power bounded operator with a nonpositive inverse on an AL-space.     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).     

Complete systems, elementary submodels and the tightness of upper hyperspaces

We introduce and study some completeness properties for systems of open coverings of a given topological space. A Hausdorff space admitting a system of cardinality κ satisfying one of these properties is of type Gκ. Hence, we define several new variants of the ?ech number and use elementary submodels to determine further results. We introduce M-hulls and M-networks, for M elementary submodel. As an application, we give estimates for both the tightness and the Lindelöf number of a generic upper hyperspace. Two recent results of Costantini, Holá and Vitolo on the tightness of co-compact hyperspaces follow from ours as corollaries.