薄膜光学常数的模拟退火算法研究

在薄膜的光学参数拟合时，操作者给定的模型初值对拟合结果有很大的关系。采用广泛用于求解复杂系统优化问题的模拟退火算法来求解薄膜光学常数，降低了操作者给定拟合模型初值的要求。通过对常规的模拟退火算法以及非常快速的模拟退火方法(Very Fast Stimulated Annealing，VFSA)分析，针对性地在模型扰动及退火计划上存在的缺陷作了改进，提高了VFSA算法的计算稳健性。通过大量的拟合实践，验证了提出的改进模拟退火方法的有效性。     

Dynamics of gold clusters on amorphous carbon films induced by annealing in a transmission electron microscope

The change of the size distribution of Au clusters induced by annealing was studied in situ by transmission electron microscopy. Starting from statistically distributed Au clusters on a thin amorphous carbon film, “islands” are formed within a few months storage at room temperature, which consist of Au clusters with sizes <4 nm embedded in a thin Au film. These islands cover originally areas with sizes around 25 × 70 nm². If the temperature is increased in the transmission electron microscope two different processes can be clearly distinguished that lead to the coarsening of the cluster size distribution: cluster coalescence and (contactless) Ostwald ripening. The degree and rate of the coarsening are found to depend on the underlying surface (Au film or amorphous carbon) and the exposure to the high-flux high-energy electron beam, which can be estimated to lead to high-temperature excursions in a cluster on a 10⁻¹² s time scale. The experimental findings are confirmed by Monte-Carlo simulations using the many-body Gupta potentials in order to calculate the Au/Au interaction. Moreover, the results of MC simulations suggest an electron-beam induced formation of a “quasi-two-dimensional gas” of small highly mobile Au species on the Au film, which promotes Ostwald ripening.     

薄膜法布里-珀罗滤光片中的超棱镜效应

基于薄膜法布里珀罗滤光片在其峰值波长处具有较大群延迟的特性,设计并从实验上验证了光束倾斜入射时这种结构中存在的超棱镜效应。根据光学薄膜理论中的特征矩阵法,数值模拟计算了器件的群延迟和空间色散曲线,镀制并对器件进行了测试。测试结果表明器件在透射峰值波长处因超棱镜效应引起的空间色散最大位移值达到65μm,与理论计算结果非常吻合;相对于传统的光栅和棱镜器件而言器件具有更高的空间角度色散,实际测试在784.5 nm至786.5 nm波长范围内器件的角色散达到30°/nm。     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optimization of the CIGS based thin film solar cells: Numerical simulation and analysis

Chalcopyrite Cu(In,Ga)Se (CIGS) is a very promising material for thin film photovoltaics and offers a number of interesting advantages compared to the bulk silicon devices. CIGS absorbers today have a typical thickness of about 1–2 μm. However, on the way toward mass production, it will be necessary to reduce the thickness even further. This paper indicates a numerical study to optimization of CIGS based thin film solar cells. An optimum value of the thickness of this structure has been calculated and it is shown that by optimizing the thickness of the cell efficiency has been increases and cost of production can be reduces. Numerical optimizations have been done by adjusting parameters such as the combination of band gap and mismatch as well as the specific structure of the cell. It is shown that by optimization of the considered structure, open circuit voltage increases and an improvement of conversion efficiency has been observed in comparison to the conventional CIGS system. Capacitance–voltage characteristics and depletion region width versus applied voltage for optimized cell and typical cell has been calculated which simulation results predict that by reducing cell layers in the optimized cell structure, there is no drastically changes in depletion layer profile versus applied voltage. From the simulation results it was found that by optimization of the considered structure, optimized value of CIGS and transparent conductive oxide thickness are 0.3 μm and 20 nm and also an improvement of conversion efficiency has been observed in comparison to the conventional CIGS which cell efficiency increases from 17.65 % to 20.34%, respectively.     

Probing mechanical properties of thin film and ceramic materials in micro- and nano-scale using indentation techniques

In this study, we report on the mechanical properties, failure and fracture modes in two cases of engineering materials; that is transparent silicon oxide thin films onto poly(ethylene terephthalate) (PET) membranes and glass-ceramic materials. The first system was studied by the quazi-static indentation technique at the nano-scale and the second by the static indentation technique at the micro-scale. Nanocomposite laminates of silicon oxide thin films onto PET were found to sustain higher scratch induced stresses and were effective as protective coating material for PET membranes. Glass-ceramic materials with separated crystallites of different morphologies sustained a mixed crack propagation pattern in brittle fracture mode.     

热压制备(AgSbTe2)100-x-(GeTe)x合金的热电性能

以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe₂)_100-x-(GeTe)_x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80).     

Structural, magnetic, magnetocaloric and magnetotransport properties in Ge doped Ni-Mn-Sb Heusler alloys

The effect of Ge substitution on the magnetic, magnetocaloric and transport properties of Ni₄₅Co₅Mn₃₈Sb_12−xGe_x (x=0-3) has been investigated. The decrease in the exchange interaction brought by Ge substitution can be seen from the reduction in the magnetization of austenite phase and the increase in the martensitic transition temperature. The magnetocaloric effect and the magnetoresistance values are found to be quite sensitive to small changes in Sb/Ge ratio. Taking into account various properties, the present series seems to be a promising multifunctional system.     

Magnetic properties of Mn-rich Rh2Mn1+xSn1−x Heusler alloys

X-ray powder diffraction and magnetization measurements have been carried out on Rh₂Mn_1+xSn_1−x (0≤x≤0.3) alloys. The alloys, which crystallize in the L2₁ structure, were found to exhibit ferromagnetic behavior. The lattice constant a at room temperature decreases with increasing x, whereas the Curie temperature T_C decreases linearly. At 5 K the magnetic moment per formula unit first increases with increasing x and then saturates for x≥0.2. The experimental results are discussed in terms of the influence of the Mn-Mn exchange interactions between the Mn atoms on the Sn and Mn sites.     

高温超导薄膜在微波双工器上的应用

本文采用全波电磁仿真方法设计、制作并测试了一种工作于C波段的星载高温超导微波双工器,采用的材料是在厚度为0.5mm介电常数为23.5的LaAlO3衬底上用磁控溅射法制备而成的双面氧化物高温超导薄膜YBCO.利用在微波范围内,高温超导薄膜的Q值比常规导体高1～3个数量级的特点,实现了器件的小型化和低插损.