Phase composition and phase transformation in Bi(Sb,Nb,Ta)O4 system

In this work Bi(Sb_xNb_yTa_z)O₄ (x + y + z = 1) samples are prepared using mixed-oxide method. A pseudo-ternary phase diagram of Bi(Sb,Nb,Ta)O₄ system is given below the melting point. It is composed of a monoclinic phase region, an orthorhombic phase region and a monoclinic–orthorhombic co-existing phase region. In the orthorhombic phase region, the transformation from orthorhombic to triclinic phase is found to be sensitive to the composition and sintering temperature. Both the transformation from monoclinic to orthorhombic structure and the transformation from orthorhombic to triclinic structure have been studied by the cell parameters.     

原子荧光光谱法对果园土壤中砷和汞空间分布特征的研究

利用王水消解—双道原子荧光光谱法测定了山东省苹果主产区栖霞市果园土壤中的As和Hg含量,验证了检测方法的检出限、准确度与精密度,分析了栖霞市果园土壤中重金属As和Hg的空间分布特征,并对栖霞市果园土壤中As和Hg的污染状况进行评价。结果表明：栖霞市果园土壤中As的含量范围为2.79～20.93 mg·kg-1,平均值为10.59 mg·kg-1,而Hg的含量范围为0.01～0.79 mg·kg-1,平均值为0.12 mg·kg-1。As元素在土壤中变异较小,而Hg元素在土壤中变异较大。频数分布图显示,土壤中As元素含量基本符合正态分布,含量大多在7～15 mg·kg-1之间,土壤中Hg元素含量不符合正态分布,含量大多在0.03～ 0.21 mg·kg-1之间。土壤As和Hg含量与土壤各养分指标之间的相关性均不显著,且土壤中As和Hg两种元素之间亦无显著的相关关系。以国家绿色食品产地环境质量标准为评价依据,栖霞市果园土壤As含量处于无污染的清洁水平,而土壤Hg的污染指数大于1的样点占总数的4.76%,需要引起管理者的注意。     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

原子荧光光谱法研究贝壳堤岛贝壳沙中As的空间分布特征

用原子荧光光谱法测定了贝壳沙中As元素含量,研究了As在黄河三角洲贝壳堤岛贝壳沙中的空间分布规律,分析了贝壳沙中As与其他营养元素的相关性,并对影响其含量与空间分布的因素进行探讨。结果表明：贝壳沙样品中As的含量范围为0.78～8.76 mg·kg-1,平均值为3.11 mg·kg-1,整体上处于清洁的水平。贝壳沙中As含量有随剖面深度增加而增大的趋势,贝壳沙粒径大小也影响贝壳沙中As的含量,贝壳沙粒径越小,As含量越高,且不同粒径贝壳沙中As含量差异显著(p≤0.05)。贝壳沙中As与全磷(total phosphor,TP)和全钾(total potassium,TK)以及Cu, Zn, Mn均具有极显著的正相关关系,与全氮(total nitrogen,TN)和Fe的相关性不显著。综合分析认为,贝壳沙中As主要来自于风化后的贝壳沙对环境中As元素的吸附与固定而非贝壳形成过程中对该元素的富集作用。     

Improved thermoelectric performance in p-type Bi_(0.48)Sb_(1.52)Te_3 bulk material by adding MnSb_2Se_4

Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.     

Comparison of microstructure and mechanical properties of ultra-narrow gap laser and gas-metal-arc welded S960 high strength steel

The microstructural characteristics and mechanical properties, including micro-hardness, tensile properties, three-point bending properties and Charpy impact toughness at different test temperatures of 8 mm thick S960 high strength steel plates were investigated following their joining by multi-pass ultra-narrow gap laser welding (NGLW) and gas metal arc welding (GMAW) techniques. It was found that the microstructure in the fusion zone (FZ) for the ultra-NGLW joint was predominantly martensite mixed with some tempered martensite, while the FZ for the GMAW joint was mainly consisted of ferrite with some martensite. The strength of the ultra-NGLW specimens was comparable to that of the base material (BM), with all welded specimens failed in the BM in the tensile tests. The tensile strength of the GMAW specimens was reduced approximately by 100 MPa when compared with the base material by a broad and soft heat affected zone (HAZ) with failure located in the soft HAZ. Both the ultra-NGLW and GMAW specimens performed well in three-point bending tests. The GMAW joints exhibited better impact toughness than the ultra-NGLW joints.     

氢化物发生-催化共振瑞利散射光谱法测定痕量砷

在硫酸介质中,以硼氢化钠(NaBH₄)为还原剂,可将As(Ⅲ)还原为砷化氢(AsH₃)气体使其逸出,用Ce(SO₄)₂-H₂SO₄-KI混合液做吸收液,在催化剂KI存在下四价铈与AsH₃气体反应生成具有共振瑞利散射(RRS)的砷微粒和具有荧光的三价铈,导致体系在370 nm处的RRS信号和在351 nm处的荧光强度增大。在选定条件下,As(Ⅲ)浓度分别在0.006～0.76 mg·L-1和0.006～0.28 mg·L-1范围内与RRS增加值ΔI和荧光强度增大值ΔF₃₅₁呈线性关系,检出限均为3.0 μg·L-1。据此可建立新的检测As(Ⅲ)的催化RRS和荧光光谱法。     

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.