Sb2O3掺杂对提高PbWO4晶体光学及闪烁性能的作用

采用改进的布里奇曼（Ｂｒｉｄｇｍａｎ）法生长了掺杂Ｓｂ２Ｏ３的ＰｂＷＯ４晶体。基于透射光谱、紫外激发及其发射谱、Ｘ射线激发的发射谱、光输出和辐照损伤待方面的测试,讨论了Ｓｂ２Ｏ３掺杂对提高ＰｂＷＯ４晶体光学及闪烁性能的作用。     

Ylidaddukte der Penteltrichloride

Ylide Adducts of Pentele Trichlorides Ylides Ph₃PCR₂ form 1 : 1 adducts with PCl₃, AsCl₃ und SbCl₃. The addition of HCl to dichlorophosphanyl- und dichloroarsanyl ylides also leads to such adducts. In solution the PCl₃ adducts 2 are dissociated into ions. For the AsCl₃ adducts 3 b and 3 e of triphenylphosphonium ethylide and isopropylide X-ray analyses show distinctly different degrees of transition from a zwitterionic ψ-tbp to a cationic ψ-tetrahedral structure. The SbCl₃ adduct 4 b of the triphenylphosphonium ethylide on the other hand forms a rather asymmetric dimer and approaches a square-pyramidal geometry at the antimony atom. The 2 : 1 ylide adducts 11 with PCl₃ form in solution the dications (Ph₃PCR₂)₂PCl²⁺. The 2 : 3 adduct 15 of triphenylphosphonium methylide to AsCl₃ also has an ionic structure in the crystal. There are cations (Ph₃PCH₂)₂AsCl²⁺, which pairwise join with two AsCl₃ molecules to form doubly charged supracations in the presence of As₂Cl₈^2– as counterions.     

Sb2S3纳米粒子修饰ZnO纳米片微纳分级结构的光电化学性能

采用恒电位方法,选择氯化钾和乙二胺(EDA)为添加剂,在氧化铟锡(ITO)导电玻璃上制备了高度有序的ZnO纳米片阵列,通过二次电沉积得到了ZnO纳米片上生长纳米棒的微纳分级结构.利用化学浴沉积法在ZnO基底上沉积Sb₂S₃纳米粒子制备出了Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构.利用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见(UV-Vis)吸收光谱、瞬态光电流等对其形貌、结构组成和光电化学性能进行了表征和分析.结果表明, Sb₂S₃/ZnO纳米片上生长纳米棒分级壳核结构的光电流明显高于Sb₂S₃/ZnO纳米片壳核结构.在Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构的基础上旋涂一层P3HT薄膜形成P3HT/Sb₂S₃/ZnO复合结构,以上述复合结构薄膜为光活性层组装成杂化太阳电池,其中, P3HT/Sb₂S₃/ZnO分级壳核结构杂化太阳电池的能量转换效率最高,达到了0.81%.     

Dust acoustic wave in a dusty plasmas with streaming ions and nonadiabatic dust charge variation

The effects of nonadiabatic dust charge fluctuation on the nonlinear propagation of the dust acoustic (DA) solitary wave in collisionless dusty plasma with streaming ions have been investigated. By using the reductive perturbation technique, a modified Korteweg-de Vries (mKdV) equation governing the nonlinear waves was derived and the solitary solution of the mKdV equation was also obtained. It was shown that the damping rate of the slow mode DA solitary wave was strongly affected by the ion streaming velocity.     

Small amplitude variable charge dust Bernstein-Greene-Kruskal double layers

A first theoretical attempt is made to investigate small amplitude, variable charge dust Bernstein-Greene-Kruskal (BGK) double layers (DLs). The nature of the dust BGK-DLs (compressive or rarefactive), their strength and thickness depend sensitively on the net negative charge residing on the grain surface, the dust grain dynamics and, more interestingly, on the ion-to-electron temperatures ratio.     

ICP—AES同时测定钴酸锂中13个杂质元素

利用全谱直读ICP-AES分析技术,对试样处理方法、元素分析谱线、基体干扰、背景校正、仪器分析参数等进行了研究,综合确定了最佳实验条件。将钴酸锂试样用硝酸、高氯酸处理后,再用盐酸与硝酸溶解残渣,ICP-AES同时测定铜、铁、镍、锰、铂、铋、铅、金、铝、镉、钯、锡、砷等13个杂质元素。样品加标回收率为85.2%—113.0%,相对标准偏差为1.0%—7.7%。方法操作简便、快速、准确。     

单根砷掺杂氧化锌纳米线场效应晶体管的电学及光学特性

采用化学气相沉积（CVD）的方法在砷化镓基底上合成直径为20 nm左右、长约数十微米的氧化锌纳米线,然后采用热扩散的方法,将生长于砷化镓基底之上的氧化锌纳米线通过600 ℃,30 min的有氧退火处理后,获得了砷掺杂的氧化锌纳米线.将获得的掺杂后的氧化锌纳米线采用电子束曝光以及真空溅射镀膜的方法将钛/金合金作为接触电极引出,从而构建成场效应晶体管.文中研究了单根氧化锌纳米线砷掺杂前后的电学特性,证实了通过砷掺杂来获得p型的氧化锌纳米线的可行性.构建的p型砷掺杂氧化锌场效应晶体管的跨导为35 nA/V,载流 关键词： p型ZnO纳米线 砷掺杂 场效应晶体管 光致发光