An All‐Inorganic Perovskite‐Phase Rubidium Lead Bromide Nanolaser

Rubidium lead halides (RbPbX₃), an important class of all‐inorganic metal halide perovskites, are attracting increasing attention for photovoltaic applications. However, limited by its lower Goldschmidt tolerance factor t≈0.78, all‐inorganic RbPbBr₃ has not been reported. Now, the crystal structure, X‐ray diffraction (XRD) pattern, and band structure of perovskite‐phase RbPbBr₃ has now been investigated. Perovskite‐phase RbPbBr₃ is unstable at room temperature and transforms to photoluminescence (PL)‐inactive non‐perovskite. The structural evolution and mechanism of the perovskite–non‐perovskite phase transition were clarified in RbPbBr₃. Experimentally, perovskite‐phase RbPbBr₃ was realized through a dual‐source chemical vapor deposition and annealing process. These perovskite‐phase microspheres showed strong PL emission at about 464 nm. This new perovskite can serve as a gain medium and microcavity to achieve broadband (475–540 nm) single‐mode lasing with a high Q of about 2100.     

Hole‐Boosted Cu(Cr,M)O2 Nanocrystals for All‐Inorganic CsPbBr3 Perovskite Solar Cells

The all‐inorganic CsPbBr₃ perovskite solar cell (PSC) is a promising solution to balance the high efficiency and poor stability of state‐of‐the‐art organic–inorganic PSCs. Setting inorganic hole‐transporting layers at the perovskite/electrode interface decreases charge carrier recombination without sacrificing superiority in air. Now, M‐substituted, p‐type inorganic Cu(Cr,M)O₂ (M=Ba²⁺, Ca²⁺, or Ni²⁺) nanocrystals with enhanced hole‐transporting characteristics by increasing interstitial oxygen effectively extract holes from perovskite. The all‐inorganic CsPbBr₃ PSC with a device structure of FTO/c‐TiO₂/m‐TiO₂/CsPbBr₃/Cu(Cr,M)O₂/carbon achieves an efficiency up to 10.18 % and it increases to 10.79 % by doping Sm³⁺ ions into perovskite halide, which is much higher than 7.39 % for the hole‐free device. The unencapsulated Cu(Cr,Ba)O₂‐based PSC presents a remarkable stability in air in either 80 % humidity over 60 days or 80 °C conditions over 40 days or light illumination for 7 days.     

Dislocations that Decrease Size Mismatch within the Lattice Leading to Ultrawide Band Gap,Large Second‐Order Susceptibility,and High Nonlinear Optical Performance of AgGaS2

The essence of rational design syntheses of functional inorganic materials lies in understanding and control of crystal structures that determine the physical properties. AgGaS₂ has the highest figure of merit for IR nonlinear optical interactions to date, but suffers low laser‐induced damage threshold (LIDT). The partial Li substitution of Ag atoms is now shown to push up the bottom of the conduction band and flatten the top of the valence band, leading to an ultrawide band gap of 3.40 eV (record high for AgGaS₂, indicating a transparency edging nearly 180 nm shorter than that of AgGaS₂), which gives Li_0.60Ag_0.40GaS₂ a LIDT 8.6 times stronger when AgGaS₂ is compared. Li_0.60Ag_0.40GaS₂ exhibits 1.1 times stronger nonlinear susceptibility, which is because the energy‐favorable Li substitution gradually decreases the sulfur dislocation in the lattice, which allows a better geometric superposition of nonlinear optical tensors.