STUDY OF NON-SUBMERGED GROIN TURBULENCE FLOW IN A SHALLOW OPEN CHANNEL BYLES

采用动态亚格子模式和浸没边界法,对宽浅槽道中的丁坝群绕流的水动力学特性进行了三维大涡模拟研究. 利用丁坝绕流,试验中采用粒子图像测速仪(particle image velocimetry, PIV)测量的试验中自由水面处的时间平均流速和湍动强度数据对模型进行率定,结果表明计算结果与试验数据吻合良好. 丁坝长度与丁坝之间距离的比值L/D对丁坝周围的水流流动形式、湍流强度、涡量分布有显著影响. 在L保持不变并且L/D较大时,丁坝之间的距离D较小,这限制了混合层的发展,因此混合层中的湍动强度和涡量都较小;同时丁坝之间的回流区的流线形式也发生明显变化. 此外,还给出了涡体在丁坝坝头附近产生,发展并向下游输运的动态过程.     

Synthesis of Schiff Base Bearing Phenolic Hydroxy Group and Its Anion Recognition

A new anion receptor bearing phenolic hydroxy group based on 3,5-ditertbutylsalicylaldehyde-p-nitrophenylhydrazone (1) was designed and synthesized. Upon addition of AcO^- and F^-, the receptor exhibited visible color changes from deep yellow to purple. However, no obvious color changes were observed on addition of the other anions tested (H₂PO₄^-, Cl^-, Br^-, I^-). The binding properties of the receptor with anions such as AcO^- and F^- were investigated by UV-Vis and fluorescent titrations. The result indicated that the receptor 1 had a higher affinity to AcO^- and F^- and a 1:1 host-guest complex was formed through H-bond interactions between 1 and anions.     

A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

We investigate the influence of voltage drop across the lightly doped drain(LDD) region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson’s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.     

The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μ m thick thin-layer SOI.     

Effects of Relativistic and Ponderomotive Nonlinearities on an Intense Laser Pulse Propagation in a Plasma Channel

The optical guiding of a moderately intense laser pulse in a parabolic preformed plasma channel is analyzed by means of the variational method.Relativistic,ponderomotive and their coupling nonlinearities are included.The conditions for periodic defocusing and focusing,as well as constant spot size propagation are given.It is found that the laser focusing is released by the coupling of relativistic and ponderomotive nonlinearities.     

噪声环境下基于两体纠缠态的远程态制备

本文研究了量子噪声对分别以Einstein-Podolsky-Rosen （EPR）态和两体部分纠缠态作为量子信道来远程制备单比特态的量子过程的影响. 通过求解Lindblad形式的主方程,得到量子信道随时间的演化,采用迹距离来度量不同噪声情况下输出态与初态的接近程度. 研究表明,作用在z方向的噪声对远程态制备的影响最弱,而同时作用在x,y,z方向的噪声对远程态制备的影响最强. 关键词： 远程态制备 迹距离 纠缠态 噪声信道     

多输入多输出量子密钥分发信道容量研究

量子安全通信是一个量子密钥分发过程,目前采用的通信技术严重制约了量子密钥分发的比特率.将多输入多输出（MIMO）技术应用于量子密钥分发系统,可提高量子密钥分发的比特率,促进量子安全通信向高速大容量发展.文中首先构造出MIMO量子密钥分发信道中多光子纠缠态Wigner算符矩阵.并在此基础上,推导出多光子双模压缩纠缠态Wigner算符矩阵和MIMO量子密钥分发信道容量.为开发稳健的MIMO量子安全通信空时处理算法和优化设计高性能MIMO量子密钥分发系统提供理论支撑和技术基础. 关键词： 多输入多输出 双模压缩态 多光子纠缠态 信道容量     

矩形槽通道内周期性充分发展换热的研究

本文应用数值模拟的方法研究了矩形槽通道内周期性充分发展换热情况及几何参数对流动和换热的影响.结果表明:当周期长度一定时,上下矩形突出部分的水平间距由小变大时,Nu和阻力系数f都是有所减小;周期长度一定且上下矩形突出部分水平间距相等时,增加矩形突出部分的宽度,Nu和阻力系数f会增加;当矩形突出部分的宽度一定, 并且水平交错均匀排列时,增加矩形突出部分的水平间距即增加周期长度时Nu减小,而f先是减小而后又有所增加.     

窄缝通道中液氮的临界热流密度实验研究

本文在实验的基础上对窄缝通道中液氮的临界热流密度进行了实验研究。实验针对3个不同长度和间距尺寸的窄缝通道在多方位倾角的情况下进行。实验测量结果显示窄缝的方位倾角和窄缝的间距尺寸对临界热流密度有很大的影响。临界热流密度随窄缝间距尺寸的减小而减小,随着窄缝倾角的变化先增加(0°-90°)后减小(90°-180°),而窄缝长度对临界热流密度的影响作用较为复杂。通常,临界热流密度在倾角为90°时达到最大值。     

直通道内置肋板绕流的研究

本文应用PIV流场测量方法,对直通道内置肋板的绕流,进行了研究。流动Re数达到100000,肋板与通道高度之比H/L分别为0.1、0.2。实验结果表明: (1)PIV处理得到的肋板后的分离绕流,在不同的时刻,流动形态是不同的,是不规则的、非稳定的流动;(2)一定数量的测量结果经平均后得到结果有一定的稳定性,反映流动有一定的周期性; (3)PUV测量的平均结果与2D定常数值模拟结果有一定的差距。