异质多晶SiGe栅应变Si NMOSFET物理模型研究

结合了“栅极工程”和“应变工程”二者的优点, 异质多晶SiGe栅应变Si MOSFET, 通过沿沟道方向使用不同功函数的多晶SiGe材料, 在应变的基础上进一步提高了MOSFET的性能. 本文结合其结构模型, 以应变Si NMOSFET为例, 建立了强反型时的准二维表面势模型, 并进一步获得了其阈值电压模型以及沟道电流的物理模型. 应用MATLAB对该器件模型进行了分析, 讨论了异质多晶SiGe栅功函数及栅长度、衬底SiGe中Ge组分等参数对器件阈值电压、沟道电流的影响, 获得了最优化的异质栅结构. 模型所得结果与仿真结果及相关文献给出的结论一致, 证明了该模型的正确性. 该研究为异质多晶SiGe栅应变Si MOSFET的设计制造提供了有价值的参考. 关键词： 异质多晶SiGe栅 应变Si NMOSFET 表面势 沟道电流     

偏振成像探测技术发展现状及关键技术

考虑偏振成像探测技术在目标探测中具有独特优势,本文介绍了偏振成像探测技术的概念,概括了国外偏振成像探测技术的研究历程和发展现状。基于上述描述,针对偏振成像探测的关键技术进行了深入的讨论,包括目标偏振特性、信道环境下的偏振传输特性和偏振成像目标全偏振图像的获取等。最后总结了该研究领域存在的主要问题,归纳了偏振成像探测技术的发展趋势。     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

The present paper proposes a new Fin Field Effect Transistor (FinFET) with an amended Channel (AC). The fin region consists of two sections; the lower part which has a rounded shape and the upper part of fin as conventional FinFETs, is cubic. The AC-FinFET devices are proven to have a lower threshold voltage roll-off, reduced DIBL, better subthreshold slope characteristics, and a better gate capacitance in comparison with the C-FinFET. Moreover, the simulation result with three-dimensional and two-carrier device simulator demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the rounded shape of the lower fin region and decreasing corner effects there, the heat can flow easily, and the device temperature will decrease. Also the gate control over the channel increases due to the narrow upper part of the fin. The paper, thus, attempts to show the advantages of higher performance AC-FinFET device over the conventional one, and its effect on the operation of nanoscale devices.     

Transformations of iodine species inside elliptical channels of AlPO4‐11 crystals at low temperature: a Raman study

Raman spectra of iodine species confined in one‐dimensional elliptical channels of AlPO₄‐11 (AEL) crystals have been studied from room temperature down to −196 °C. As temperature decreases, thermal fluctuations of individual iodine molecules confined in AEL channels are slowed down and they prefer to rotate to channel axis direction, which increases the population of iodine molecules along channel axis (i.e., lying molecules and chains). Such temperature‐driven orientation transformation of iodine molecules is found to be reversible upon heating up to room temperature. The experimental observations are in good agreement with our theoretical simulations by molecular dynamics on low density iodine‐filled AEL crystals. We thus provide a new way to modulate the orientation of iodine molecules in nanochannels, which may have implications in low‐temperature‐sensitive nanoscale devices. Copyright © 2015 John Wiley & Sons, Ltd.     

接近非相干水声通信信道容量的信号处理算法

恶劣情况下的非相干水声通信信道模型为随机相位Rayleigh衰落,推导了该模型的信道容量曲线。为实现接近非相干信道容量的可靠通信,提出多进制低密度校验码(LDPC)和恒重码级联码的多进制非相干概率域迭代处理算法。在信道幅度和相位完全未知的情况下,根据矩估计得到信号和噪声频点幅度的统计参量,进而得到恒重码的码字后验概率,再对多进制LDPC码进行因子图迭代译码。仿真证明本算法与现有的最大能量检测非迭代译码算法相比,与信道容量曲线的差距从4.5dB缩小至1.5dB。给出了实际海试湖试通信效果,频段为6~10kHz,数据速率为357bps,海试时近似垂直通信距离为5km,湖试时水平通信距离近3km、多径超过50mS,两种情况下无差错通信的信噪比门限为2dB,验证了本算法的优势。     

离子通道电子束回旋脉塞的等离子体波效应

 研究了离子通道回旋电子束脉塞（ICECM）中的等离子体波非线性效应。利用流体理论与自洽非线性理论方法对ICECM中等离子体波效应的微观机理进行了分析。研究发现，等离子体波加强了电子束的纵向群聚，束-波互作用的能量交换效率及系统增益得到明显提高。数值模拟计算表明，对于中等等离子体密度、1.5kA电流和1MV加速电压的电子束，系统能够获得的脉冲功率和频率分别为200MW和280GHz的毫米波束。     

基于电吸收调制器的解复用器窗口特性分析及优化

数值模拟了基于电吸收调制器 (Electro absorptionmodulator,EAM)解复用器的开关窗口特性 ,在考虑邻道串扰和强度抖动 (由同步偏离和时间抖动导致 )的光时分复用数值模型中对解复用信号的误码率进行分析。数值模拟结果表明 ,电吸收调制器的窗口特性 (消光比和窗口宽度 )满足 4× 10Gb/s的光时分复用通信系统中解复用器的要求 ;在小的偏置电压下 ,邻道串扰和解复用器的透过率特性必须仔细考虑以达到最小的误码率 ;在大的偏置电压下 ,较大的射频幅度将会使解复用信号误码率最小