Spin accumulation in coupled quantum dots with ferromagnetic and superconducting electrodes

We theoretically investigate the spin accumulation in two parallel coupled quantum dots (QDs) with ferromagnetic and superconducting electrodes. Due to the ferromagnetic lead, the spin accumulation appears on the resonance of Andreev reflection. The spin accumulation in each of the two QDs can be controlled by the gate voltage. The sign of the spin accumulation is also controllable by tuning the bias. Furthermore, tuning the magnetic flux can exchange the amplitude of the spin accumulation in the two QDs. The Aharonov-Bohm oscillation effects also provides a way to control the spin accumulation of each QD.     

Asymptotic properties of Cramér-Smirnov statistics—A new approach

Let Y₁,…, Y_n be independent identically distributed random variables with distribution function F(x, θ), θ = (θ′₁, θ′₂), where θ_i (i = 1, 2) is a vector of p_i components, p = p₁ + p₂ and for θI, an open interval in ^p, F(x, θ) is continuous. In the present paper the author shows that the asymptotic distribution of modified Cramér-Smirnov statistic under H_n: θ₁ = θ₁₀ + n^−1/2γ, θ₂ unspecified, where γ is a given vector independent of n, is the distribution of a sum of weighted noncentral χ₁² variables whose weights are eigenvalues of a covariance function of a Gaussian process and noncentrality parameters are Fourier coefficients of the mean function of the Gaussian process. Further, the author exploits the special form of the covariance function by using perturbation theory to obtain the noncentrality parameters and the weights. The technique is applicable to other goodness-of-fit statistics such as U² [G. S. Watson, Biometrika 48 (1961), 109–114].     

First-principles studies of electronic,optical,and mechanical properties of γ-Bi_2Sn_2O_7

The detailed theoretical studies of electronic,optical,and mechanical properties of γ-Bi_2Sn_2O_7 are carried out by using first-principle density functional theory calculations.Our calculated results indicate that γ-Bi_2Sn_2O_7 is the p-type semiconductor with an indirect band gap of about 2.72 e V.The flat electronic bands close to the valence band maximum are mainly composed of Bi-6s and O-2p states and play a key role in determining the electrical properties of γ-Bi_2Sn_2O_7.The calculated complex dielectric function and macroscopic optical constants including refractive index,extinction coefficient,absorption coefficients,reflectivity,and electron energy-loss function show that γ-Bi_2Sn_2O_7 is an excellent light absorbing material.The analysis on mechanical properties shows that γ-Bi_2Sn_2O_7 is mechanically stable and highly isotropic.     

Design Consideration for a Two-Distributed-Junction Tuning Circuit

We describe a novel method of designing a tuning circuit with two half-wave distributed junctions separated by a half-wavelength microstripline, which analytically determines the circuit parameters such as the minimum current density of the junctions and the characteristic impedances of the distributed junctions and the microstripline. The tuning circuit was approximated by simple transmission theory and then simplified with ideal circuit components for analysis. We applied Chebyshevs band-pass filter theory, in part, to optimize the circuit design. The analytical results revealed that a high characteristic-impedance ratio between the distributed junctions and the microstripline is necessary to obtain broadband matching using low-current-density junctions. The experimental results for all-NbN SIS mixers we designed with this method demonstrated double-sideband (DSB) receiver-noise temperatures of 6–10 quanta from 710 to 810 GHz for a mixer with a current density of only 4 kA/cm² (estimated C_JR_N product of 37 at 750 GHz). The RF bandwidth was broader than that of a conventional full-wave distributed SIS mixer with the same current density.     

Structure comparison between Th2Zn17-type and TbCu7-type Sm–Fe intermetallic compounds and their nitrides by means of 57Fe-Mössbauer spectroscopy

Samarium–iron intermetallic compounds were prepared by a melt spinning method with low and high wheel speeds, which resulted in a Th₂Zn₁₇-type and a TbCu₇-type structure, respectively. Structure comparison between these types was investigated for Sm–Fe intermetallic compounds and their nitrides by ⁵⁷Fe-Mössbauer spectroscopy.     

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.     

使用PTB7作为阳极修饰层提高有机发光二极管的性能

采用poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-?uoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7)作为有机发光二极管器件的阳极修饰层,制备了结构为indium tin oxide(ITO)/PTB7(不同浓度)/N,N’-Bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine(NPB,40 nm)/8-hydroxyquinoline(Alq3,60 nm)/LiF(1 nm)/Al的系列器件,同时研究了不同浓度的PTB7对器件性能的影响.PTB7的最佳浓度为0.25 mg/mL,器件性能得到明显的改善,起亮电压为4.3 V.当驱动电压为14.6 V时,最大亮度为45800 cd/m2,最大电流效率为9.1 cd/A.与没有PTB7修饰的器件相比,其起亮电压降低了1.9 V,最高亮度提升了78.5%.器件性能提高归因于PTB7的插入使得空穴注入和传输能力大大改善.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Chemisorption of 1,1-dichloroethene on the Si(1 1 1)-7 × 7 surface

Chemisorption of 1,1-dichloroethene (Cl₂CCH₂) to a Si(1 1 1)-7 × 7 surface was studied by means of X-ray photoelectron spectroscopy using synchrotron radiation, recording chlorine 2p and carbon 1s spectra. For carbon 1s, spectral assignment of the chemisorbed species is based on quantum chemical calculations of chemical shifts in model compounds.The results confirm the identity of covalently bonded 1-chlorovinyl (-CClCH₂) and vinylidene (CCH₂) adspecies. Upon chemisorption at room temperature it was found that about one-third of the molecules break one C-Cl bond while about two-thirds of the adsorbates break two C-Cl bonds. We do not, however, find evidence for isomerization of CCH₂ to di-bonded vinylene (-CHCH-).     

Diffusion-weighted imaging of the brain at 7 T with echo-planar and turbo spin echo sequences: preliminary results

Ultra-high-field clinical MRI scanners (e.g., 7 T and above) are becoming increasingly prevalent and can potentially enhance diagnostic ability through higher contrast, resolution and/or sensitivity. Diffusion-weighted MRI is a highly valued component in today's radiological exam and may benefit from the enhanced signal-to-noise ratio provided by high field with the appropriate imaging strategy. The most common diffusion pulse sequence readout (echo-planar imaging (EPI)) has been widely employed for in vivo human 7 T diffusion tensor imaging (DTI). In this article, we present results of brain DTI at 7 T with two diffusion-weighted imaging pulse sequence readouts: echo-planar imaging (EPI-DTI) and turbo spin echo (TSE-DTI). Results indicate that analogous coverage, quality and resolution typical of lower field (2 mm) can be obtained by properly processed EPI-DTI at 7 T, and, with some reduction in efficiency and sharpness, TSE-DTI at 7 T. Furthermore, 7 T TSE-DTI shows promise in obtaining higher-resolution results in targeted acquisitions of specific brain areas.